Growth of intersubband GaN/AlGaN heterostructures

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7608, Issue , 2010, Pages

  Dussaigne, A ^a   Nicolay, S ^a   Martin, D ^a   Castiglia, A ^a   Grandjean, N ^a   Nevou, L ^b   Machhadani, H ^b   Tchernycheva, M ^b   Vivien, L ^b   Julien, F H ^b   Remmele, T ^c   Albrecht, M ^c  

^a EPFL   (Switzerland)

^b CNRS   (France)

^c LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

Electro optical modulator; III V nitrides; Intersubband absorption; Molecular beam epitaxy

Indexed keywords

ALUMINUM NITRIDE; III-V SEMICONDUCTORS; LIGHT MODULATION; LIGHT MODULATORS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOPHOTONICS; OPTICAL SIGNAL PROCESSING; SEMICONDUCTOR QUANTUM WELLS; WIDE BAND GAP SEMICONDUCTORS;

DEVICE GEOMETRIES; ELECTROOPTICAL MODULATORS; III-V NITRIDES; INTERSUBBAND ABSORPTION; MODULATION BANDWIDTH; NARROW-LINE WIDTH; RELATIVE ENERGIES; TRANSITION ENERGY;

GALLIUM NITRIDE;

EID: 77951989297     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.847082     Document Type: Conference Paper

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