Macroscopic defects in GaN/AlN multiple quantum well structures grown by MBE on GaN templates

Microelectronics Journal

Volumn 40, Issue 2, 2009, Pages 360-362

  Andersson, T G ^a   Liu, X Y ^a   Aggerstam, T ^b   Holmstrom P ^b   Lourdudoss, S ^b   Thylen, L ^b   Chen, Y L ^c   Hsieh, C H ^c   Lo, I ^c  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

GaN; Intersubband; MBE; Sapphire substrate; Surface cracks; Template

Indexed keywords

ABSORPTION; ABSORPTION SPECTROSCOPY; ATOMIC SPECTROSCOPY; CORUNDUM; CRACKS; DEFECTS; DEFORMATION; FATIGUE OF MATERIALS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; GALLIUM ALLOYS; GALLIUM NITRIDE; INFRARED SPECTROSCOPY; OPTICAL MICROSCOPY; SAPPHIRE; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SPECTROSCOPIC ANALYSIS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

GAN; INTERSUBBAND; MBE; SAPPHIRE SUBSTRATE; SURFACE CRACKS; TEMPLATE;

SURFACE DEFECTS;

EID: 58749106589     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.07.065     Document Type: Article

References (4)

1. P. Holmström, X.Y. Liu, H. Uchida, T. Aggerstam, A. Kikuchi, K. Kishino, S. Lourdudoss, T.G. Andersson, L. Thylén, Intersubband photonic devices by group-III nitrides, Proceedings of SPIE, vol. 6782, 2007, p. 67821N1-1-14.
2. Liu X.Y., Holmström P., Jänes P., Thylén L., and Andersson T.G. Intersubband absorption at 1.5-3.5 μm in GaN/AlN multiple quantum wells grown by molecular beam epitaxy on sapphire. Phys. Status Solidi b244 (2007) 2892
3. T. Aggerstam, T.G. Andersson, P. Holmström, P. Jänes, X.Y. Liu, S. Lourdudoss, L. Thylén, GaN/AlN multiple quantum well structures grown by MBE on GaN templates for 1.55 μm intersubband absorption, in: Quantum Sensing and Nanophotonic Devices IV, Proceedings of the SPIE, vol. 6479, 2007, pp. 64791E-647911.
4. Liu X.Y., Aggerstam T., Holmström P., Lourdudoss S., and Andersson T.G. Cracks in GaN/AlN multiple quantum well structures grown by MBE. J. Phys.: Conf. Ser. 100 (2008) 042026