Electronic transport through GaN/AlN single barriers: Effect of polarisation and dislocations

Microelectronics Journal

Volumn 40, Issue 2, 2009, Pages 339-341

  Leconte, S ^a   Gerrer, L ^a   Monroy, E ^a  

^a CEA GRENOBLE   (France)

Author keywords

Atomic force microscopy; Heterostructures; Photoluminescence; Semiconductors

Indexed keywords

ATOMIC FORCE MICROSCOPY; ATOMIC PHYSICS; ATOMS; CRYSTALS; DISTILLATION; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT EMISSION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR MATERIALS;

ALN BARRIERS; BARRIER THICKNESS; CAP LAYERS; CARRIER (CO); CONDUCTION PROPERTIES; ELECTRONIC TRANSPORTS; FORCE MICROSCOPY; GAN LAYERS; HETEROSTRUCTURES; POISSON SOLVERS; REVERSE BIASES; SEMICONDUCTORS; VOLTAGE DROPS;

LUMINESCENCE;

EID: 58749095484     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.07.066     Document Type: Article

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