Active layer design and power calculation of nitride-based THz quantum cascade lasers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8268, Issue , 2012, Pages

  Chou, Hungchi ^a   Anwar, Mehdi ^a   Manzur, Tariq ^b  

^a University of Connecticut   (United States)

^b NAVAL UNDERSEA WARFARE CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; BLUE SHIFT; III-NITRIDE; OUTPUT POWER; POWER CALCULATION; POWER INCREASE; ROOM TEMPERATURE; THZ QUANTUM CASCADE LASERS;

ALUMINUM; CARRIER CONCENTRATION; NANOPHOTONICS;

NITRIDES;

EID: 84856908507     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.914477     Document Type: Conference Paper

References (21)

1. Yujie J. Ding, Senior Member, IEEE. "High-power tunable terahertz sources based on parametric processes and applications"
2. Kawase,K.;Shibuya,T.;Suizu,K.;Hayashi,S.; Nagoya Univ., Nagoya, Japan, "Novel THz-wave generation technique and applications"ICECom,2010 Conference Proceedings. Page:1-4 (2010)
3. Chen, Meng-Ku; Kim, Jae Hun; Yang, Chia-En; Yin, Stuart Shizhuo; Hui, Rongqing; Ruffin, Paul; "Terahertz generation in multiple laser-induced air plasmas" 2008, Page(s): 231102-231102-3
4. B. I. Greene, J. F. Federici, D. R. Dykaar, A. F. J. Levi, and L. Pfeiffer, "Picosecond pump and probe spectroscopy utilizing freely propagating terahertz radiation," Opt. Lett., vol. 16, no. 1, pp. 48-49, Jan. 1991.
5. Greg Sun, Richard A. Soref and Jacob B. Khurgin, Superlattices and Microstructures, vol. 37, p. 107, 2005
6. Egor Alekseev, Andreas Eisenbach, Dimitris Pavlidis, Seth M. Hubbard and William Sutton, http://www.eecs.umich.edu/dp-group/NDR/thz2000alekseev.pdf
7. Guo Bao-Zeng et al 2008 Chinese Phys. B 17 290
8. R. Köhler, A. Tredicucci, F. Beltram, H. E. Beere, E. H. Linfield, A. G. Davies, D. A. Ritchie, R. C. Iotti, and F. Rossi, Nature (London) 417, 156, 2002.
9. P. C. M. Planken, M. C. Nuss, W. H. Knox, D. A. B. Miller, and K. W. Goossen, "THz pulses from the creation of polarized electron-hole pairs in biased quantum wells," Appl. Phys. Lett., vol. 61, pp. 2009-2011, Oct. 1992.
10. H. G. Roskos, M. C. Nuss, J. Shah, K. Leo, D. A. B. Miller, A. M. Fox, S. Schmitt-Rink, and K. K̈ohler, "Coherent submillimeter-wave emission from charge oscillations in a double-well potential," Phys. Rev. Lett., vol. 68, pp. 2216-2219, Apr. 1992.
11. V. D. Jovanoviæ, D. Indjin, Z. Ikoniæ, and P. Harrison, Appl. Phys. Lett. 84, 2995, 2004.
12. G. Sun, R. A. Soref, and J. B. Khurgin, Superlattices Microstruct. 37, 107, 2005.
13. A. Hangleiter, F. Hitzel, S. Lahmann, and U. Rossow, "Composition dependence of polarization fields in GaInN/GaN quantum wells," Appl. Phys. Lett., vol. 83, no. 6, pp. 1169-1171, Aug. 2003.
14. C. Adelmann, E. Sarigiannidou, D. Jalabert, Y. Hori, J.-L. Rouvière, B. Daudin, S. Fanget, C. Bru-Chevallier, T. Shibata, and M. Tanaka, "Growth and optical properties of GaN/AlN quantum wells," Appl. Phys. Lett., vol. 82, no. 23, pp. 4154-4156, Jun. 2003.
15. R. A. Arif, Y. K. Ee, and N. Tansu, "Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes," Appl. Phys. Lett., vol. 91, no. 9, pp. 091110-1-091110-3, Aug. 2007.
16. R. A. Arif, H. P. Zhao, Y. K. Ee, and N. Tansu, "Spontaneous emission and characteristics of InGaN quantum wells light emitting diodes," IEEE J. Quantum Electron., vol. 44, no. 5/6, pp. 573-580, May/Jun. 2008.
17. H. Zhao, R. A. Arif, and N. Tansu, "Design analysis of staggered InGaN quantum wells light-emitting diodes at 500-540 nm," IEEE J. Sel. Topics Quantum Electron., vol. 15, no. 4, pp. 1104-1114, Jul./Aug. 2009.
18. H. Zhao, G. S. Huang, G. Liu, X. H. Li, J. D. Poplawsky, S. T. Penn, V. Dierolf, and N. Tansu, "Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growthtemperature profile," Appl. Phys. Lett., vol. 95, no. 6, pp. 061104-1- 061104-3, 2009.
19. D. Turchinovich, P. Uhd Jepsen, B. S. Monozon, M. Koch, S. Lahmann, U. Rossow, and A. Hangleiter, "Ultrafast polarization dynamics in biased quantum wells under strong femtosecond optical excitation," Phys. Rev. B., vol. 68, no. 24, pp. 241307-1-241307-4, Dec. 2003.
20. D. Turchinovich, B. S. Monozon, and P. Uhd Jepsen, "Role of dynamical screening in excitation kinetics of biased quantum wells: Nonlinear absorption and ultrabroadband terahertz emission," J. Appl. Phys., vol. 99, no. 1, pp. 013510-1-013510-8, Jan. 2006.
21. x/si triple barrier diodes". Applied Physics Letters, 79, 2273, 2001.