SCOPUS 정보 검색 플랫폼

Volumn 98, Issue 13, 2011, Pages

Intersubband transitions at atmospheric window in Alx Ga 1-x N/GaN multiple quantum wells grown on GaN/sapphire templates adopting AlN/GaN superlattices interlayer

(14) Huang, C C a Xu, F J a Yan, X D a Song, J a Xu, Z Y a Cen, L B a Wang, Y a Pan, J H a Wang, X Q a Yang, Z J a Shen, B a Zhang, B S b Chen, X S c Lu, W c

a PEKING UNIVERSITY (China)

b SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS (China)

c SHANGHAI INSTITUTE OF TECHNICAL PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC WINDOW; CRACK FREE; FLEXIBLE LAYER; GAN/SAPPHIRE; HIGH QUALITY; INTERSUBBAND ABSORPTION; INTERSUBBAND TRANSITIONS; METALORGANIC CHEMICAL VAPOR DEPOSITION; MULTIPLE QUANTUM WELLS; STRAIN MODULATION; WAVELENGTH REGIONS;

ATMOSPHERIC CHEMISTRY; CRACKS; GALLIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; SUPERLATTICES; TENSILE STRAIN;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79953762180 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3573798 Document Type: Article

Times cited : (15)

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