Monolithically integrated AlGaN/GaN/AlN-based solar-blind ultraviolet and near-infrared detectors

Electronics Letters

Volumn 44, Issue 16, 2008, Pages

  Hofstetter, D ^a   Theron, R ^a   Baumann, E ^a   Giorgetta, F R ^a   Golka, S ^b   Strasser, G ^b   Guillot, F ^c   Monroy, E ^c  

^a UNIVERSITY OF NEUCHÂTEL   (Switzerland)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^c CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CORUNDUM; CRYSTAL GROWTH; ELECTRIC CONVERTERS; EPITAXIAL GROWTH; GALLIUM NITRIDE; INFRARED DETECTORS; INFRARED DEVICES; MOLECULAR BEAM EPITAXY; MONOLITHIC INTEGRATED CIRCUITS; OPTOELECTRONIC DEVICES; PULSED LASER DEPOSITION; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; THICK FILMS; ULTRAVIOLET DETECTORS; WASTEWATER;

ACTIVE AREAS; ACTIVE REGION; ALN BARRIERS; BUFFER LAYERS; DEVICE STRUCTURES; LONG WAVELENGTHS; MONOLITHICALLY INTEGRATED; NEAR INFRA-RED; PLASMA ASSISTED MOLECULAR-BEAM EPITAXY; QUANTUM WELLS; SAPPHIRE TEMPLATES; SOLAR BLINDS; STRAIN COMPENSATED; SUPER LATTICES;

DETECTORS;

EID: 49149086545     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20081477     Document Type: Article

References (6)

1. See for instance http://www.ofil.co.il/Products/range_of_products.html
2. Strite, S.T., and Morkoc, H.: ' GaN, AlN, and InN: a review ', J. Vac. Sci. Technol. B, 1992, 10, (4), p. 1237-1266 10.1116/1.585897
3. Monroy, E., Calle, F., Munoz, E., Omnes, E., Beaumont, B., and Gibart, P.: ' Visible-blindness in photoconductive and photovoltaic AlGaN ultraviolet detectors ', J. Electron. Mater., 1998, 28, (3), p. 240-245 10.1007/s11664-999- 0021-2 0361-5235
4. Hofstetter, D., Schad, S.-S., Wu, H., Schaff, W.J., and Eastman, L.F.: ' GaN/AlN-based quantum well infrared photodetector for 1.55 μm ', Appl. Phys. Lett., 2003, 83, (3), p. 572-574 10.1063/1.1594265 0003-6951
5. Hofstetter, D., Baumann, E., Giorgetta, F.R., Graf, M., Maier, M., Guillot, F., Bellet-Amalric, E., and Monroy, E.: ' High-quality AlN/GaN-superlattice structures for the fabrication of narrow-band 1.4 μm photovoltaic intersubband detectors ', Appl. Phys. Lett., 2006, 88, (12), p. 121112 10.1063/1.2185613 0003-6951
6. Hofstetter, D., Baumann, E., Giorgetta, F.R., Guillot, F., Leconte, S., and Monroy, E.: ' Optically non-linear effects in intersubband transitions of GaN/AlN-based superlattices ', Appl. Phys. Lett., 2007, 91, (13), p. 131115 0003-6951