Sub-picosecond modulation by intersubband transition in ridge waveguide with GaN/AlN quantum wells

Electronics Letters

Volumn 40, Issue 15, 2004, Pages 962-963

  Iizuka, N ^a   Kaneko, K ^a   Suzuki, N ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; BANDPASS FILTERS; DOPING (ADDITIVES); GALLIUM NITRIDE; LIGHT MODULATION; LIGHT POLARIZATION; OPTICAL WAVEGUIDES; PHOTODETECTORS;

EPITAXIAL LAYERS; INTERSUBBAND TRANSITION; RIDGE WAVEGUIDES; WAVEGUIDE STRUCTURE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 3843114448     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20045434     Document Type: Article

References (7)

1. Noda, S., et al.: 'All-optical modulation for semiconductor lasers by using three energy levels in n-doped quantum wells', IEEE J, Quantum Electron., 1993, 29, (6), pp. 1640-1647
2. Akiyama, T., et al.: 'Nonlinearity and recovery time of 1.55 μm intersubband absorption in InGaAs/AlAs/AlAsSb coupled quantum wells', Electron. Lett., 2001, 37, (2), pp. 129-130
3. Akimoto, R., et al.: 'Sub-picosecond electron relaxation of near-infrared intersubband transitions in n-doped (CdS/ZnSe)/BeTe quantum wells', Appl. Phys. Lett., 2002, 81, (16), pp. 2998-3000
4. Gmachl, C., et al.: 'Sub-picosecond electron scattering time for λ ≅ 1.55 μ intersubband transition in GaN/AlGaN multiple quantum wells', Electron. Lett., 2001, 37, (6), pp. 378-380
5. Iizuka, N., Kaneko, K., and Suzuki, N.: 'Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy', Appl. Phys. Lett., 2002, 81, (10), pp. 1803-1805
6. Hamazaki, J., et al.: 'Ultrafast intersubband relaxation and nonlinear susceptibility at 1.55 um in GaN/AlN multiple-quantum wells', Appl. Phys. Lett., 2004, 84, (7), pp. 1102-1104
7. Kikuchi, A., et al.: 'Improvement of crystal quality of RF-plasmaassisted molecular beam epitaxy grown Ga-polarity GaN by high-temperature grown AlN multiple intermediated layers', Jpn. J. Appl. Phys., 2000, 39, (4B), pp. L330-333