High-quality AlNGaN -superlattice structures for the fabrication of narrow-band 1.4 μm photovoltaic intersubband detectors

Applied Physics Letters

Volumn 88, Issue 12, 2006, Pages

  Hofstetter, Daniel ^a   Baumann, Esther ^a   Giorgetta, Fabrizio R ^a   Graf, Marcel ^a   Maier, Manfred ^b   Guillot, Fabien ^c   Bellet Amalric, Edith ^c   Monroy, Eva ^c  

^a Universite de Neuchatel Institut de Physique   (Switzerland)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^c CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; BANDWIDTH; CRACKS; EPITAXIAL GROWTH; PHOTODETECTORS; PHOTOVOLTAIC EFFECTS;

CRACKING PROBLEMS; INTERSUBBAND DETECTORS; PHOTOVOLTAIC DETECTORS; SUPERLATTICE STRUCTURES;

SEMICONDUCTOR SUPERLATTICES;

EID: 33645519797     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2185613     Document Type: Article

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