Modelling of polarization charge-induced asymmetry of I-V characteristics of AlN/GaN-based resonant tunnelling structures

Physica Status Solidi (B) Basic Research

Volumn 234, Issue 3, 2002, Pages 769-772

  Indlekofer, K M ^a,b   Dona E ^a   Malindretos, J ^b   Bertelli, M ^a   Kocan M ^a   Rizzi, A ^a,c   Luth H ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b ARIZONA STATE UNIVERSITY   (United States)

^c UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0036920882     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200212)234:3<769::AID-PSSB769>3.0.CO;2-H     Document Type: Conference Paper

References (3)

1. A. Kikuchi, R. Bannai, and K. Kishino, phys. stat. sol. (a) 188, 187 (2001).
2. F. Sacconi, A. Di Carlo, and P. Lugli, phys. stat. sol. (a) 190, 295 (2002).
3. K.M. Indlekofer and J. Malindretos, http://www.fz-juelich.de/isg/mbe/wingreen.html.