Vertical transport in GaN/AlGaN resonant tunneling diodes and superlattices

Journal of Electronic Materials

Volumn 41, Issue 5, 2012, Pages 965-970

  Warde, Elias ^a   Sakr, Salam ^a   Tchernycheva, Maria ^a   Julien, Francois Henry ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

Current density; Peak to valley ratio; Quantum well; Resonant tunneling; Superlattice; Transmission probability; Transport

Indexed keywords

AL CONTENT; APPLIED VOLTAGES; BALLISTIC TRANSPORTS; CURRENT DENSITY-VOLTAGE CHARACTERISTICS; CURRENT DIRECTION; ELECTRON ENERGIES; INTERNAL ELECTRIC FIELDS; J-V CHARACTERISTICS; MULTIPLE QUANTUM-WELL STRUCTURES; NEGATIVE DIFFERENTIAL RESISTANCES; PEAK-TO-VALLEY RATIOS; TRANSFER MATRIXES; TRANSMISSION PROBABILITIES; TRANSPORT; VERTICAL TRANSPORTS;

ALUMINUM; CURRENT DENSITY; ELECTRIC FIELDS; RESONANT TUNNELING; RESONANT TUNNELING DIODES; SUPERLATTICES; TRANSFER MATRIX METHOD;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84862138177     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-012-1920-1     Document Type: Article

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