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Volumn 42, Issue 8, 2006, Pages 810-819

Electroabsorption modulator using intersubband transitions in GaN-AlGaN-AlN step quantum wells

Author keywords

III N materiais; Intersubband transitions; Optical modulators; Plasma effect; Quantum wells; Stark effect

Indexed keywords

INTERSUBBAND TRANSITIONS; OPTICAL MODULATORS; PLASMA EFFECT; PLASMA EFFECTS; QUANTUM WELL;

EID: 33947305236     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2006.877297     Document Type: Article
Times cited : (30)

References (43)
  • 4
    • 0032674853 scopus 로고    scopus 로고
    • 1.55 μm intersubband absorption in InGaAs-AlAsSb grown by molecular beam epitaxy
    • T. Mozume, H. Yoshida, A. Neogi, and M. Kudo, "1.55 μm intersubband absorption in InGaAs-AlAsSb grown by molecular beam epitaxy," Jpn. J. Appl. Phys., vol. 38, no. 2B, pp. 1286-1289, 1999.
    • (1999) Jpn. J. Appl. Phys. , vol.38 , Issue.2 B , pp. 1286-1289
    • Mozume, T.1    Yoshida, H.2    Neogi, A.3    Kudo, M.4
  • 5
    • 0000706158 scopus 로고    scopus 로고
    • Intersubband absorption at λ ∼ 1.55 μm in well- And modulation-doped GaN-AlGaN multiple quantum wells with superlattice barriers
    • C. Gmachl, H. M. Ng, S.-N. G. Chu, and A. Y. Cho, "Intersubband absorption at λ ∼ 1.55 μm in well- and modulation-doped GaN-AlGaN multiple quantum wells with superlattice barriers," Appl. Phys. Lett., vol.77, no.23, pp. 3722-3724, 2000.
    • (2000) Appl. Phys. Lett. , vol.77 , Issue.23 , pp. 3722-3724
    • Gmachl, C.1    Ng, H.M.2    Chu, S.-N.G.3    Cho, A.Y.4
  • 6
    • 0036650592 scopus 로고    scopus 로고
    • Intersubband absorption at λ ∼ 1.2-1.6 μm in GaN/AlN multiple quantum wells grown by rf-plasma molecular beam epitaxy
    • DOI 10.1002/1521-396X(200207)192:1<124::AID-PSSA124>3.0.CO;2-3
    • K. Kishino, A. Kikuchi, H. Kanazawa, and T. Tachibana, "Intersubband absorption at λ ∼ 1.2-1.6 μm in GaN-AlN multiple quantum wells grown by RF-plasma molecular beam epitaxy," Phys. Stat Sol. (a), vol.192, no.1, pp. 124-128, 2002. (Pubitemid 34965142)
    • (2002) Physica Status Solidi (A) Applied Research , vol.192 , Issue.1 , pp. 124-128
    • Kishino, K.1    Kikuchi, A.2    Kanazawa, H.3    Tachibana, T.4
  • 7
    • 79956005542 scopus 로고    scopus 로고
    • Near-infrared intersubband absorption in GaN-AlN quantum wells grown by molecular beam epitaxy
    • N. Iizuka, K. Kaneko, and N. Suzuki, "Near-infrared intersubband absorption in GaN-AlN quantum wells grown by molecular beam epitaxy," Appl. Phys. Lett, vol.81, no.10, pp. 1803-1805, 2002.
    • (2002) Appl. Phys. Lett , vol.81 , Issue.10 , pp. 1803-1805
    • Iizuka, N.1    Kaneko, K.2    Suzuki, N.3
  • 8
    • 18444398074 scopus 로고    scopus 로고
    • Investigation of the design parameters of AlN-GaN multiple quantum wells grown by molecular beam epitaxy for intersubband absorption
    • I. Friel, K. Driscoll, E. Kulenica, M. Dutta, R. Paiella, and T. D. Moustakas, "Investigation of the design parameters of AlN-GaN multiple quantum wells grown by molecular beam epitaxy for intersubband absorption," J. Crystal Growth, vol.278, no.1-4, pp. 387-392, 2005.
    • (2005) J. Crystal Growth , vol.278 , Issue.1-4 , pp. 387-392
    • Friel, I.1    Driscoll, K.2    Kulenica, E.3    Dutta, M.4    Paiella, R.5    Moustakas, T.D.6
  • 9
    • 0000188613 scopus 로고    scopus 로고
    • Short-wavelength intersubband transitions down to 1.6 μm in ZnSe/BeTe type-II superlattices
    • DOI 10.1063/1.1343843
    • R. Akimoto, Y. Kinpara, K. Akita, F. Sasaki, and S. Kobayashi, "Shortwavelength intersubband transitions down to 1.6 μm in ZnSe/BeTe type-II superlattices," Appl. Phys. Lett., vol.78, no.5, pp. 580-582, 2001. (Pubitemid 33661930)
    • (2001) Applied Physics Letters , vol.78 , Issue.5 , pp. 580-582
    • Akimoto, R.1    Kinpara, Y.2    Akita, K.3    Sasaki, F.4    Kobayashi, S.5
  • 10
    • 0035250301 scopus 로고    scopus 로고
    • Proposal of an optical modulator based on resonant tunneling and intersubband transitions
    • Feb.
    • P. Holmström, L. Thylén, and U. Ekenberg, "Proposal of an optical modulator based on resonant tunneling and intersubband transitions," IEEE J. Quantum Electron., vol.37, no.2, pp. 224-230, Feb. 2001.
    • (2001) IEEE J. Quantum Electron. , vol.37 , Issue.2 , pp. 224-230
    • Holmström, P.1    Thylén, L.2    Ekenberg, U.3
  • 11
    • 0035474453 scopus 로고    scopus 로고
    • High-speed mid-IR modulator using Stark shift in step quantum wells
    • Oct.
    • P. Holmström, "High-speed mid-IR modulator using Stark shift in step quantum wells," IEEE J. Quantum Electron., vol.37, no.10, pp. 1273-1282, Oct. 2001.
    • (2001) IEEE J. Quantum Electron. , vol.37 , Issue.10 , pp. 1273-1282
    • Holmström, P.1
  • 12
    • 0036477684 scopus 로고    scopus 로고
    • A high-speed intersubband modulator based on quantum interference in double quantum wells
    • Feb.
    • P. Jänes, P. Holmström, and U. Ekenberg, "A high-speed intersubband modulator based on quantum interference in double quantum wells," IEEE J. Quantum Electron., vol.38, no.2, pp. 178-184, Feb. 2002.
    • (2002) IEEE J. Quantum Electron. , vol.38 , Issue.2 , pp. 178-184
    • Jänes, P.1    Holmström, P.2    Ekenberg, U.3
  • 13
    • 0037810824 scopus 로고    scopus 로고
    • High-speed optical modulator based on intersubband transitions in InGaAs-InAlAs-AlAsSb coupled quantum wells
    • P. Janes and P. Holmström, "High-speed optical modulator based on intersubband transitions in InGaAs-InAlAs-AlAsSb coupled quantum wells," in Proc. 15th Int. Conf. Indium Phosphide and Related Materials, 2003, pp. 308-311.
    • (2003) Proc. 15th Int. Conf. Indium Phosphide and Related Materials , pp. 308-311
    • Janes, P.1    Holmström, P.2
  • 14
    • 77949479661 scopus 로고    scopus 로고
    • Stockholm, Sweden, Dept. Microelectronics and Inf. Technol., Roy. Inst. Technol. (KTH), Ph.D. dissertation
    • P. Holmström, High-speed optical modulators based on intersubband transitions. Stockholm, Sweden, Dept. Microelectronics and Inf. Technol., Roy. Inst. Technol. (KTH), 2003, Ph.D. dissertation.
    • (2003) High-speed Optical Modulators Based on Intersubband Transitions
    • Holmström, P.1
  • 15
    • 0025431826 scopus 로고
    • Tunable infrared modulator and switch using Stark shift in step quantum wells
    • May
    • R. P. G. Karunasiri, Y. J. Mii, and K. L. Wang, "Tunable infrared modulator and switch using Stark shift in step quantum wells," IEEE Electron. Device Lett., vol.11, no.5, pp. 227-229, May 1990.
    • (1990) IEEE Electron. Device Lett. , vol.11 , Issue.5 , pp. 227-229
    • Karunasiri, R.P.G.1    Mii, Y.J.2    Wang, K.L.3
  • 16
    • 0035839918 scopus 로고    scopus 로고
    • 1-x N coupled double quantum wells
    • 1-x N coupled double quantum wells," Appl. Phys. Lett., vol.79, no.11, pp. 1590-1592, 2001.
    • (2001) Appl. Phys. Lett. , vol.79 , Issue.11 , pp. 1590-1592
    • Gmachl, C.1    Ng, H.M.2    Cho, A.Y.3
  • 17
    • 19744383115 scopus 로고    scopus 로고
    • Controlled n-type doping of AlN:Si films grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy
    • T. Ive, O. Brandt, H. Kostial, K. J. Friedland, L. Däweritz, and K. H. Ploog, "Controlled n-type doping of AlN:Si films grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy," Appl. Phys. Lett., vol.86, pp. 024106-024106, 2005.
    • (2005) Appl. Phys. Lett. , vol.86 , pp. 24106-24106
    • Ive, T.1    Brandt, O.2    Kostial, H.3    Friedland, K.J.4    Däweritz, L.5    Ploog, K.H.6
  • 19
    • 0033871248 scopus 로고    scopus 로고
    • High-confinement waveguides for mid-IR devices
    • P. Holmström, "High-confinement waveguides for mid-IR devices," Physica E, vol.7, no.1-2, pp. 40-43, 2000.
    • (2000) Physica e , vol.7 , Issue.1-2 , pp. 40-43
    • Holmström, P.1
  • 20
    • 0010489742 scopus 로고
    • Semiconductor components for monolithic applications
    • T. Tamir and E. Garmire, Eds. Berlin, Germany: Springer-Verlag, Topics in Applied Physics
    • E. Garmire, "Semiconductor components for monolithic applications," in Integrated Optics, T. Tamir and E. Garmire, Eds. Berlin, Germany: Springer-Verlag, 1975, vol.7, Topics in Applied Physics.
    • (1975) Integrated Optics , vol.7
    • Garmire, E.1
  • 21
    • 0003685207 scopus 로고
    • J. H. Edgar, Ed., London, U.K.: INSPEC, EMIS Datareviews Series
    • J. H. Edgar, Ed., Properties of Group III Nitrides. London, U.K.: INSPEC, 1994, vol.11, EMIS Datareviews Series.
    • (1994) Properties of Group III Nitrides , vol.11
  • 22
    • 36449003860 scopus 로고    scopus 로고
    • Very low resistance multilayer Ohmic contact to n-GaN
    • DOI 10.1063/1.115901, PII S000369519602712X
    • Z. Fan, S. N. Mohammad, W. Kim, Ö. Aktas, and A. E. Botchkarev, "Very low resistance multilayer ohmic contact to n-GaN," Appl. Phys. Lett., vol.68, no.12, pp. 1672-1674, 1996. (Pubitemid 126688350)
    • (1996) Applied Physics Letters , vol.68 , Issue.12 , pp. 1672-1674
    • Fan, Z.1    Mohammad, S.N.2    Kim, W.3    Aktas, O.4    Botchkarev, A.E.5    Morkoc, H.6
  • 23
    • 0035356466 scopus 로고    scopus 로고
    • Band parameters for III-V compound semiconductors and their alloys
    • DOI 10.1063/1.1368156
    • I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, "Band parameters for III-V compound semiconductors and their alloys," J. Appl. Phys., vol.89, no.11, pp. 5815-5875, 2001. (Pubitemid 33599303)
    • (2001) Journal of Applied Physics , vol.89 , Issue.11 I , pp. 5815-5875
    • Vurgaftman, I.1    Meyer, J.R.2    Ram-Mohan, L.R.3
  • 24
    • 0034895111 scopus 로고    scopus 로고
    • Accurate calculation of polarization-related quantities in semiconductors
    • F. Bernardini, V. Fiorentini, and D. Vanderbilt, "Accurate calculation of polarization-related quantities in semiconductors." Phys. Rev. B, vol.63, pp. 193201-193201, 2001.
    • (2001) Phys. Rev. B , vol.63 , pp. 193201-193201
    • Bernardini, F.1    Fiorentini, V.2    Vanderbilt, D.3
  • 25
    • 0041840543 scopus 로고    scopus 로고
    • Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry
    • S. Shokhovets, R. Goldhahn, G. Gobsch, S. Piekh, R. Lantier, A. Rizzi, V. Lebedev, and W. Richter, "Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry," J. Appl. Phys., vol.94, no.1, pp. 307-312, 2003.
    • (2003) J. Appl. Phys. , vol.94 , Issue.1 , pp. 307-312
    • Shokhovets, S.1    Goldhahn, R.2    Gobsch, G.3    Piekh, S.4    Lantier, R.5    Rizzi, A.6    Lebedev, V.7    Richter, W.8
  • 26
    • 35949039873 scopus 로고
    • Infrared lattice vibrations and freeelectron dispersion in GaN
    • A. S. Barker, Jr. and M. Ilegems, "Infrared lattice vibrations and freeelectron dispersion in GaN," Phys. Rev. B, vol.7, pp. 743-750, 1973.
    • (1973) Phys. Rev. B , vol.7 , pp. 743-750
    • Barker Jr., A.S.1    Ilegems, M.2
  • 27
    • 0000815007 scopus 로고
    • GaN, AlN, and InN: A review
    • S. Strite and H. Morkoç, "GaN, AlN, and InN: A review," J. Vac. Sci. Technol. B, vol.10, pp. 1237-1266, 1992.
    • (1992) J. Vac. Sci. Technol. B , vol.10 , pp. 1237-1266
    • Strite, S.1    Morkoç, H.2
  • 29
    • 0032473308 scopus 로고    scopus 로고
    • X-ray characterization of GaN-AlGaN multiple quantum wells for ultraviolet laser diodes
    • D. Korakakis, Jr., K. F. Ludwig, and T. D. Moustakas, "X-ray characterization of GaN-AlGaN multiple quantum wells for ultraviolet laser diodes," Appl. Phys. Lett., vol.72, no.9, pp. 1004-1006, 1998.
    • (1998) Appl. Phys. Lett. , vol.72 , Issue.9 , pp. 1004-1006
    • Korakakis Jr., D.1    Ludwig, K.F.2    Moustakas, T.D.3
  • 32
    • 0000570051 scopus 로고
    • Non-parabolicity and a sum rule associated with bound-to-bound and bound-to-continuum intersubband transitions in quantum wells
    • C. Sirtori, F. Capasso, J. Faist, and S. Scandolo, "Non-parabolicity and a sum rule associated with bound-to-bound and bound-to-continuum intersubband transitions in quantum wells," Phys. Rev. B, vol.50, pp. 8663-8674, 1994.
    • (1994) Phys. Rev. B , vol.50 , pp. 8663-8674
    • Sirtori, C.1    Capasso, F.2    Faist, J.3    Scandolo, S.4
  • 33
    • 84940851032 scopus 로고
    • The quantum extension of the Drude-Zener theory in polar semiconductors
    • E. D. Palik, Ed. San Diego, CA: Academic
    • B. Jensen, "The quantum extension of the Drude-Zener theory in polar semiconductors," in Handbook of Optical Constants of Solids, E. D. Palik, Ed. San Diego, CA: Academic, 1985, pp. 169-188.
    • (1985) Handbook of Optical Constants of Solids , pp. 169-188
    • Jensen, B.1
  • 34
    • 0343127597 scopus 로고    scopus 로고
    • Influence of Si doping level on the Raman and IR reflectivity spectra and optical absorption spectrum of GaN
    • PII S0921510797001529
    • G. Bentoumi, A. Deneuville, B. Beaumont, and P. Gibart, "Influence of Si doping level on the Raman and IR reflectivity spectra and optical absorption spectrum of GaN," Mater. Sci. Eng., vol.B50, no.1-3, pp. 142-147, 1997. (Pubitemid 127435712)
    • (1997) Materials Science and Engineering B , vol.50 , Issue.1-3 , pp. 142-147
    • Bentoumi, G.1    Deneuville, A.2    Beaumont, B.3    Gibart, P.4
  • 35
    • 0002680658 scopus 로고
    • On the absorption of infrared radiation by electrons in semiconductor inversion layers
    • S. J. Allen, Jr., D. C. Tsui, and B. Vinter, "On the absorption of infrared radiation by electrons in semiconductor inversion layers," Solid State Commun., vol.20, pp. 425-428, 1976.
    • (1976) Solid State Commun. , vol.20 , pp. 425-428
    • Allen Jr., S.J.1    Tsui, D.C.2    Vinter, B.3
  • 36
    • 0030246814 scopus 로고    scopus 로고
    • Ultra-high-speed multiple-quantum-well electro-absorption modulators with integrated waveguides
    • Sep.
    • T. Ido, S. Tanaka, M. Suzuki, M. Koizumi, H. Sano, and H. Inoue, "Ultra-high-speed multiple-quantum-well electro-absorption modulators with integrated waveguides," J. Lightw. Technol., vol.14, no.9, pp. 2026-2034, Sep. 1996.
    • (1996) J. Lightw. Technol. , vol.14 , Issue.9 , pp. 2026-2034
    • Ido, T.1    Tanaka, S.2    Suzuki, M.3    Koizumi, M.4    Sano, H.5    Inoue, H.6
  • 37
    • 0028539394 scopus 로고
    • On the transmission performances and the chirp parameter of a multiple-quantum-well electroabsorption modulator
    • Nov.
    • F. Dorgeuille and F. Devaux, "On the transmission performances and the chirp parameter of a multiple-quantum-well electroabsorption modulator," IEEE J. Quantum Electron., vol.30, no.11, pp. 2565-2572, Nov. 1994.
    • (1994) IEEE J. Quantum Electron. , vol.30 , Issue.11 , pp. 2565-2572
    • Dorgeuille, F.1    Devaux, F.2
  • 38
    • 0023828952 scopus 로고
    • Frequency chirping in external modulators
    • Jan.
    • F. Koyama and K. Iga, "Frequency chirping in external modulators," J. Lightw. Technol., vol.6, no.1, pp. 87-93, Jan. 1988.
    • (1988) J. Lightw. Technol. , vol.6 , Issue.1 , pp. 87-93
    • Koyama, F.1    Iga, K.2
  • 39
    • 10244244925 scopus 로고    scopus 로고
    • Theoretical and experimental study of optical gain and linewidth enhancement factor of type-I quantum-cascade lasers
    • Dec.
    • J. Kim, M. Lerttamrab, S. L. Chuang, C. Gmachl, D. L. Sivco, F. Capasso, and A. Y. Cho, "Theoretical and experimental study of optical gain and linewidth enhancement factor of type-I quantum-cascade lasers," IEEE J. Quantum Electron., vol.40, no.12, pp. 1663-1674, Dec. 2004.
    • (2004) IEEE J. Quantum Electron. , vol.40 , Issue.12 , pp. 1663-1674
    • Kim, J.1    Lerttamrab, M.2    Chuang, S.L.3    Gmachl, C.4    Sivco, D.L.5    Capasso, F.6    Cho, A.Y.7
  • 40
    • 0037591568 scopus 로고    scopus 로고
    • Small-chirp 40-Gbps electroabsorption modulator with novel tensilestrained asymmetric quantum-well absorption layer
    • Jun.
    • Y. Miyazaki, H. Tada, S. Tokizaki, K. Takagi, T. Aoyagi, and Y. Mitsui, "Small-chirp 40-Gbps electroabsorption modulator with novel tensilestrained asymmetric quantum-well absorption layer," IEEE J. Quantum Electron., vol.39, no.6, pp. 813-819, Jun. 2003.
    • (2003) IEEE J. Quantum Electron. , vol.39 , Issue.6 , pp. 813-819
    • Miyazaki, Y.1    Tada, H.2    Tokizaki, S.3    Takagi, K.4    Aoyagi, T.5    Mitsui, Y.6
  • 41
    • 1542574219 scopus 로고    scopus 로고
    • Ultrafast intersubband relaxation and nonlinear susceptbility at 1.55 μm. in GaN-AlN multiple-quantum wells
    • J. Hamazaki, S. Matsui, H. Kunugita, K. Ema, H. Kanazawa, T. Tachibana, A. Kikuchi, and K. Katsumi, "Ultrafast intersubband relaxation and nonlinear susceptbility at 1.55 μm. in GaN-AlN multiple-quantum wells," Appl. Phys. Lett., vol.84, no.7, pp. 1102-1104, 2004.
    • (2004) Appl. Phys. Lett. , vol.84 , Issue.7 , pp. 1102-1104
    • Hamazaki, J.1    Matsui, S.2    Kunugita, H.3    Ema, K.4    Kanazawa, H.5    Tachibana, T.6    Kikuchi, A.7    Katsumi, K.8
  • 42
    • 0034196025 scopus 로고    scopus 로고
    • FDTD simulation of femtosecond optical gating in nonlinear optical waveguide utilizing intersubband transition in AlGaN-GaN quantum wells
    • N. Suzuki, N. Iizuka, and K. Kaneko, "FDTD simulation of femtosecond optical gating in nonlinear optical waveguide utilizing intersubband transition in AlGaN-GaN quantum wells," IEICE Trans. Electron., vol.E83-C, no.6, pp. 981-988, 2000.
    • (2000) IEICE Trans. Electron. , vol.E83-C , Issue.6 , pp. 981-988
    • Suzuki, N.1    Iizuka, N.2    Kaneko, K.3


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