Generation of misfit dislocations by basal-plane slip in InGaN/GaN heterostructures

Applied Physics Letters

Volumn 89, Issue 20, 2006, Pages

  Liu, R ^a   Mei, J ^a   Srinivasan, S ^a   Ponce, F A ^a   Omiya, H ^b   Narukawa, Y ^b   Mukai, T ^b  

^a ARIZONA STATE UNIVERSITY   (United States)

^b NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BASAL PLANE; MISFIT STRAIN; RADIAL-SHAPE HALF LOOPS;

DISLOCATIONS (CRYSTALS); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; STRESS ANALYSIS;

HETEROJUNCTIONS;

EID: 33751078026     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2388895     Document Type: Article

References (11)

1. J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth 27, 118 (1974).
2. K. H. Chang, P. K. Bhattacharya, and R. Gibala, J. Appl. Phys. 66, 2993 (1989).
3. E. A. Fitzgerald, Y. H. Xie, D. Monroe, P. J. Silverman, J. M. Kuo, A. R. Kortan, F. A. Thiei, and B. E. Weir, J. Vac. Sci. Technol. B 10, 1807 (1992).
4. F. A. Ponce, MRS Bull. 22, 51 (1997).
5. S. Srinivasan, L. Geng, R. Liu, F. A. Ponce, Y. Narukawa, and S. Tanaka, Appl. Phys. Lett. 83, 5187 (2003).
6. R. Liu, J. Mei, S. Srinivasan, H. Omiya, F. A. Ponce, D. Cherns, Y. Narukawa, and T. Mukai, Jpn. J. Appl. Phys., Part 2 45, L549 (2006).
7. S. Srinivasan, R. Liu, F. Bertram, F. A. Ponce, S. Tanaka, H. Omiya, and Y. Nakagawa, Phys. Status Solidi B 228, 41 (2001).
8. F. A. Ponce, D. Cherns, W. T. Young, and J. W. Steeds, Appl. Phys. Lett. 69, 770 (1996).
9. R. E. Peierls, Proc. Phys. Soc. London 52, 23 (1940).
10. F. R. N. Nabarro, Proc. Phys. Soc. London 59, 256 (1947).
11. J. W. Matthews, S. Mader, and T. B. Light, J. Appl. Phys. 41, 5800 (1970).