Calculation of near-infrared intersubband absorption spectra in GaN/AlN quantum wells

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 1, 2003, Pages 132-139

  Suzuki, Nobuo ^a   Iizuka, Norio ^a   Kaneko, Kei ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Absorption spectrum; AlN; Dephasing time; GaN; Intersubband transition; Optical communication; Optical switches; Piezoelectric effect; Quantum well; Spontaneous polarization

Indexed keywords

ABSORPTION SPECTROSCOPY; ELECTRIC FIELD EFFECTS; ELECTROMAGNETIC WAVE POLARIZATION; ELECTRON TRANSITIONS; EPITAXIAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; OPTICAL COMMUNICATION; OPTICAL SWITCHES; OPTICAL VARIABLES MEASUREMENT; PIEZOELECTRICITY; SEMICONDUCTING ALUMINUM COMPOUNDS;

DEPHASING TIME; INTERSUBBAND TRANSITION; NEAR INFRARED INTERSUBBAND ABSORPTION SPECTRA; SPONTANEOUS POLARIZATION; ZERO VOLTAGE DROP;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0038082017     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.42.132     Document Type: Article

References (38)

1. L. C. West and S. J. Eglash: Appl. Phys. Lett. 46 (1985) 1156.
2. F. Capasso, C. Gmachl, R. Paiella, A. Tredicucci, A. L. Hutchinson, D. L. Sivco, J. N. Baillargeon and A. Y. Cho: IEEE J. Sel. Top. Quantum Electron. 6 (2000) 931.
3. B. F. Levine: J. Appl. Phys. 74 (1993) R1.
4. S. Noda: Femtosecond Technology, From Basic Research to Application Prospect, eds. T. Kamiya, F. Saito, O. Wada and H. Yajima (Springer, Berlin, 1990) p. 222.
5. B. Sung, H. C. Chui, M. M. Fejer and J. S. Harris, Jr.: Electron. Lett. 33 (1997) 818.
6. A. Neogi, T. Mozume, H. Yoshida and O. Wada: IEEE Photonics Technol. Lett. 11 (1999) 632.
7. T. Akiyama, N. Georgiev, T. Mozume, H. Yoshida, A. V. Gopal and O. Wada: IEEE Photonics Technol. Lett. 14 (2002) 495.
8. R. Akimoto, Y. Kinpara, K. Akita, F. Sasaki and S. Kobayashi: Appl. Phys. Lett. 78 (2001) 580.
9. C. Gmachl, H. M. Ng, S.-N. G. Chu and A. Y. Cho: Appl. Phys. Lett. 77 (2000) 3722.
10. C. Gmachl, H. M. Ng and A. Y. Cho: Appl. Phys. Lett. 79 (2001) 1590.
11. K. Kishino and A. Kikuchi: 2001 MRS Fall Meet., Boston, 2001, I1.1
12. N. Iizuka, K. Kaneko and N. Suzuki: Tech. Dig., Fifth Int. Symp. Contemporary Photonics Technology, Tokyo, 2002, J-3.
13. N. Iizuka, K. Kaneko and N. Suzuki: Tech. Dig., 2002 Conf. Lasers and Electro-Optics, Long Beach, 2002, CFG1.
14. K. Kishino, A. Kikuchi, H. Kanazawa and T. Tachibana: Appl. Phys. Lett. 81 (2002) 1234.
15. N. Suzuki and N. Iizuka: Jpn. J. Appl. Phys. 36 (1997) L1006.
16. N. Suzuki and N. Iizuka: Jpn. J. Appl. Phys. 37 (1998) L369.
17. N. Iizuka, K. Kaneko, N. Suzuki, T. Asano, S. Noda and O. Wada: Appl. Phys. Lett. 77 (2000) 648.
18. J. D. Heber, C. Gmachl, H. M. Ng and A. Y. Cho: Appl. Phys. Lett. 81 (2002) 1237.
19. N. Suzuki, N. Iizuka and K. Kaneko: IEICE Trans. Electron. E83-C (2000) 981.
20. N. Suzuki: Opt. Quantum Electron. 33 (2001) 985.
21. N. Suzuki: IEICE Trans. Electron. E85-C (2002) 174.
22. N. Suzuki: Tech. Dig., Fourth Int. Topical Workshop on Contemporary Photonic Technologies, Tokyo, 2001, P-10.
23. N. Suzuki and N. Iizuka: Jpn. J. Appl. Phys. 38 (1999) L363.
24. N. Iizuka and N. Suzuki: Compound Semiconductors 1998, Proc. 25th Int. Symp. Compound Semiconductors, Nara, eds. H. Sakaki, J.-C. Woo, N. Yokoyama and Y. Hirayama (IOP Publishing, Bristol, 1999) Inst. Phys. Conf. Ser. No. 162, p. 663.
25. C. Gmachl, H. M. Ng and A. Y. Cho: Appl. Phys. Lett. 77 (2000) 334.
26. F. Bernardini, V. Fiorentini and D. Vanderbilt: Phys. Rev. B 56 (1997) R10024.
27. H. M. Ng, C. Gmachl, S. N. G. Chu and A. Y. Cho: J. Cryst. Growth 220 (2000) 432.
28. A. Kikuchi, T. Yamada, S. Nakamura, K. Kusakabe, D. Sugihara and K. Kishino: Jpn. J. Appl. Phys. 39 (2000) L330.
29. D. Huang, P. Visconti K. M. Jones, M. A. Reshchikov, F. Yun, A. A. Baski, T. King and H. Morkoç: Appl. Phys. Lett. 78 (2001) 4145.
30. K. Jeganathan, T. Kitamura, M. Shimizu and H. Okumura: Jpn. J. Appl. Phys. 41 (2002) L28.
31. K. Kaneko, N. Iizuka and N. Suzuki: 2002 Electronic Materials Conf., Santa Barbara, 2002, M7.
32. S. Strite and H. Morkoç: J. Vac. Sci. Technol. B 10 (1992) 1237.
33. A. Polian, M. Grimsditch and I. Grzegory: J. Appl. Phys. 79 (1996) 3343.
34. K. Tsubouchi and N. Mikoshiba: IEEE Trans. Sonics Ultrason. 32 (1985) 634.
35. R. A. Hogg, C. A. Norman, A. J. Shields, M. Pepper and N. Iizuka: Appl. Phys. Lett. 76 (1999) 1428.
36. K. Kim, W. R. L. Lambrecht and B. Segall: Phys. Rev. B 53 (1996) 16310.
37. A. Harwit, J. S. Harris, Jr. and A. Kapitulnik: J. Appl. Phys. 60 (1986) 3211.
38. B. E. Fouts, L. F. Eastman, U. V. Bhapkar and M. S. Shur: Appl. Phys. Lett. 70 (1997) 2849.