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Volumn 96, Issue 14, 2010, Pages

Effect of doping on the mid-infrared intersubband absorption in GaN/AlGaN superlattices grown on Si(111) templates

(10) Kandaswamy, P K a MacHhadani, H b Kotsar, Y a Sakr, S b Das, A a Tchernycheva, M b Rapenne, L c Sarigiannidou, E c Julien, F H b Monroy, E a

a CEA GRENOBLE (France)

b UNIVERSITÉ PARIS SACLAY (France)

c LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; III-V SEMICONDUCTORS; INFRARED DEVICES;

BAND FILLING EFFECTS; DOPING LEVELS; EFFECT OF DOPING; INTERNAL ELECTRIC FIELDS; INTERSUBBAND ABSORPTION; MANY-BODY EFFECT; MIDINFRARED; TRANSITION ENERGY;

GALLIUM NITRIDE;

EID: 77951149173 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3379300 Document Type: Article

Times cited : (49)

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