Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions

Applied Physics Letters

Volumn 88, Issue 15, 2006, Pages

  Nicolay, S ^a   Feltin, E ^a   Carlin, J F ^a   Mosca, M ^a   Nevou, L ^b   Tchernycheva, M ^b   Julien, F H ^b   Ilegems, M ^a   Grandjean, N ^a  

^a EPFL   (Switzerland)

^b UNIV PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; GALLIUM NITRIDE; LIGHT ABSORPTION; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS;

ABSORPTION LINEWIDTH; INTERSUBBAND ABSORPTION; RELAXATION MECHANISM; SURFACE MORPHOLOGIES;

SURFACE ACTIVE AGENTS;

EID: 33646135540     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2186971     Document Type: Article

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