Coaxial nanowire resonant tunneling diodes from non-polar AlN/GaN on silicon

Applied Physics Letters

Volumn 100, Issue 14, 2012, Pages

  Carnevale, S D ^a   Marginean, C ^b   Phillips, P J ^a   Kent, T F ^a   Sarwar, A T M G ^a   Mills, M J ^a   Myers, R C ^a,b  

^a Ohio State University   (United States)

^b OHIO STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALN; ALN/GAN; COAXIAL GEOMETRY; COAXIAL NANOWIRES; CORE-SHELL NANOWIRES; CRYOGENIC TEMPERATURES; DEVICE MODELING; DOUBLE BARRIERS; ELECTRICAL MEASUREMENT; M-PLANE; NEGATIVE DIFFERENTIAL RESISTANCES; NON-POLAR; PEAK CURRENT DENSITY; PEAK TO VALLEY CURRENT RATIO; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; POLAR STRUCTURES; ROOM TEMPERATURE;

NEGATIVE RESISTANCE; RESONANT TUNNELING DIODES;

NANOWIRES;

EID: 84859804679     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3701586     Document Type: Article

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