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Volumn 97, Issue 4, 2010, Pages

Temperature stability of intersubband transitions in AlN/GaN quantum wells

(8) Berland, Kristian a Stattin, Martin a Farivar, Rashid a Sultan, D M S a Hyldgaard, Per a Larsson, Anders a Wang, Shu Min a Andersson, Thorvald G a

a CHALMERS UNIVERSITY OF TECHNOLOGY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CONDUCTION-BAND ELECTRONS; INTERSUBBAND ABSORPTION; INTERSUBBAND TRANSITIONS; MULTIPLE QUANTUM WELLS; PIEZO-ELECTRIC FIELDS; QUANTUM WELL; ROOM TEMPERATURE; TEMPERATURE DEPENDENCE; TEMPERATURE EFFECTS; TEMPERATURE STABILITY;

ABSORPTION; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; THERMAL EXPANSION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77955760668 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3456528 Document Type: Article

Times cited : (19)

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