Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes

Applied Physics Letters

Volumn 99, Issue 18, 2011, Pages

  Boucherit, M ^a   Soltani, A ^a   Monroy, E ^b   Rousseau, M ^a   Deresmes, D ^a   Berthe, M ^a   Durand, C ^a   De Jaeger, J C ^a  

^a INSTITUT D ELECTRONIQUE   (France)

^b CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; DIRECT CURRENT OPERATIONS; DOUBLE BARRIERS; ELECTRICAL TREATMENT; FORWARD BIAS; GAN/SAPPHIRE; MEASUREMENT CONDITIONS; NEGATIVE DIFFERENTIAL RESISTANCES; PEAK TO VALLEY CURRENT RATIO; REPRODUCIBILITIES;

CURRENT VOLTAGE CHARACTERISTICS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NEGATIVE RESISTANCE; RESONANT TUNNELING;

RESONANT TUNNELING DIODES;

EID: 80855141614     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3659468     Document Type: Article

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