Continuous evolution of Ga adlayer coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN

Applied Physics Letters

Volumn 86, Issue 4, 2005, Pages

  Koblmuller G ^a,b   Brown, J ^c   Averbeck, R ^a   Riechert, H ^a   Pongratz, P ^b   Speck, J S ^c  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^c University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUTOSURFACTANT EFFECT; GALLIUM ADLAYER; QUADRUPOLE MASS SPECTROMETRY (QMS);

ACTIVATION ENERGY; DIFFUSION; HIGH ENERGY ELECTRON DIFFRACTION; MASS SPECTROMETRY; MOLECULAR BEAM EPITAXY; MONOLAYERS; PLASMAS; SURFACE STRUCTURE;

GALLIUM;

EID: 13644274232     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1853530     Document Type: Article

References (24)

1. S. Nakamura, T. Mukai, and M. Senoh, Appl. Phys. Lett. 64, 1687 (1994).
2. H. Tews, R. Averbeck, A. Graber, and H. Riechert, Electron. Lett. 32, 2004 (1996).
3. R. P. Vaudo, I. D. Goepfert, T. D. Moustakas, D. M. Beyea, T. J. Frey, and K. Meehan, J. Appl. Phys. 79, 2779 (1996).
4. U. K. Mishra, Y.-F. Wu, B. P. Kellr, S. Keller, and S. P. DenBaars, in Physics of Semiconductor Devices, edited by V. Kumar and S. K. Agarwal (Narosa, New Delhi, 1998), and references therein.
5. H. Riechert, R. Averbeck, A. Graber, M. Schienle, U. Strauß, and H. Tews, Mater. Res. Soc. Symp. Proc. 449, 149 (1997).
6. E. J. Tarsa, B. Keying, X. H. Wu, P. Fini, S. P. Den Baars, and J. S. Speck, J. Appl. Phys. 82, 5472 (1997).
7. S. Einfeldt, U. Birkle, C. Thomas, M. Fehrer, H. Heinke, and D. Hommel, Mater. Sci. Eng., B 50, 12 (1997).
8. B. Keying, E. J. Tarsa, C. R. Elsass, P. Fini, S. P. Den Baars, and J. S. Speck, J. Appl. Phys. 85, 6470 (1999).
9. B. Heying, I. Smorchkova, C. Poblenz, C. Elsass, P. Fini, S. P. Den Baars, U. Mishra, and J. S. Speck, Appl. Phys. Lett. 77, 2885 (2000).
10. B. Keying, R. Averbeck, L. F. Chen, E. Haus, H. Riechert, and J. S. Speck, J. Appl. Phys. 88, 1855 (2000).
11. V. Ramachandran, C. D. Lee, R. M. Feenstra, A. R. Smith, J. E. Noithrup, and D. E. Greve, J. Cryst. Growth 209, 355 (2000).
12. G. Mula, C. Adelmann, S. Moehl, J. Oullier, and B. Daudin, Phys. Rev. B 64, 195406 (2001).
13. C Adelmann, J. Brault, D. Jalabert, P. Gentile, H. Mariette, G. Mula, and B. Daudin, J. Appl. Phys. 91, 9638 (2002).
14. C. R. Elsass, C. Poblenz, B. Heying, P. Fini, P. M. Petroff, S. P. DenBaars, U. K. Mishra, and J. S. Speck, J. Cryst. Growth 233, 709 (2001).
15. J. E. Northrup, J. Neugebauer, R. M. Feenstra, and A. R. Smith, Phys. Rev. B 61, 9932 (2000).
16. A. R. Smith, R. M. Feenstra, D. W. Greve, M.-S. Shin, M. Skowronski, J. Neugebauer, and J. E. Northrup, J. Vac. Sci. Technol. B 16, 2242 (1998).
17. S. H. Xu, H. Wu, X. Q. Dai, W. P. Lau, L. X. Zheng, M. H. Xie, and S. Y. Tong, Phys. Rev. B 67, 125409 (2003).
18. G. Koblmüller, R. Averbeck, H. Riechert, and P. Pongratz, Phys. Rev. B 69, 035325 (2004).
19. T. Zywietz, J. Neugebauer, and M. Scheffler, Appl. Phys. Lett. 73, 487 (1998).
20. J. Neugebauer, T. Zywietz, M. Scheffler, J. E. Northrup, H. Chen, and R. M. Feenstra, Phys. Rev. Lett. 90, 056101 (2003).
21. J. Brown, F. Wu, P. M. Petroff, and J. S. Speck, Appl. Phys. Lett. 84, 690 (2004).
22. C. Adelmann, J. Brault, G. Mula, B. Daudin, L. Lymperakis, and J. Neugebauer, Phys. Rev. B 67, 165419 (2003).
23. G. Koblmüller, P. Pongratz, R. Averbeck, and H. Riechert, Appl. Phys. Lett. 80, 2281 (2002).
24. P. Hacke, G. Feuillet, H. Okumura, and S. Yoshida, Appl. Phys. Lett. 69, 2507 (1996).