Intersubband energies in Al 1-yIn yN/Ga 1-XIn xN heterostructures with lattice constant close to a GaN

Superlattices and Microstructures

Volumn 52, Issue 1, 2012, Pages 70-77

  Akabli, H ^a   Almaggoussi, A ^a   Abounadi, A ^a   Rajira, A ^a   Berland, K ^b   Andersson, T G ^b  

^a CADI AYYAD UNIVERSITY   (Morocco)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

AlInN; AlN; GaInN; GaN; Intersubband; Strain; Telecommunication wavelength

Indexed keywords

ALINN; ALN; GAINN; GAN; INTER-SUBBAND; TELECOMMUNICATION WAVELENGTHS;

ALUMINUM; EPITAXIAL GROWTH; GALLIUM NITRIDE; SEMICONDUCTOR QUANTUM WELLS; STRAIN;

WAVELENGTH;

EID: 84861014609     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2012.04.012     Document Type: Article

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