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Volumn 108, Issue 10, 2010, Pages

Sequential tunneling transport characteristics of GaN/AlGaN coupled-quantum-well structures

(10) Sudradjat, Faisal a Zhang, Wei a Driscoll, Kristina a Liao, Yitao a Bhattacharyya, Anirban a Thomidis, Christos a Zhou, Lin b Smith, David J b Moustakas, Theodore D a Paiella, Roberto a

a Boston University (United States)

b ARIZONA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED BIAS; BIAS POLARITY; COUPLED QUANTUM WELL; ELECTRONIC TRANSPORT; GAN SUBSTRATE; HIGH-RESISTANCE STATE; HIGHLY NONLINEAR; INTERFACE ROUGHNESS; LOW-RESISTANCE STATE; MEASUREMENT RESULTS; MULTIPLE-QUANTUM-WELL STRUCTURES; PHOTON-ASSISTED TUNNELING; QUANTUM WELL STRUCTURES; SEQUENTIAL TUNNELING; STRUCTURAL DEFECT; SUB-BANDS; SUBBAND STRUCTURES; TEMPERATURE DEPENDENCE; TRANSPORT CHARACTERISTICS; TRANSPORT MECHANISM; TURN ON VOLTAGE;

BIAS VOLTAGE; GALLIUM ALLOYS; GALLIUM NITRIDE; QUANTUM CHEMISTRY; QUANTUM THEORY; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 78650295873 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3511334 Document Type: Conference Paper

Times cited : (26)

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