Influence of AlN overgrowth on structural properties of GaN quantum wells and quantum dots grown by plasma-assisted molecular beam epitaxy

Journal of Applied Physics

Volumn 96, Issue 2, 2004, Pages 1104-1110

  Gogneau, N ^a   Jalabert, D ^a   Monroy, E ^a   Sarigiannidou, E ^a   Rouviere J L ^a   Shibata, T ^b   Tanaka, M ^b   Gerard, J M ^a   Daudin, B ^a  

^a CEA GRENOBLE   (France)

^b NGK INSULATORS LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CHEMICAL ACTIVATION; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PLASMA APPLICATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

CAPPING PROCESSES; MISFIT DISLOCATION; PLASMA ASSISTED MOLECULAR BEAM EPITAXY (PAMBE); PLASTIC RELAXATION;

GALLIUM NITRIDE;

EID: 3242710637     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1759785     Document Type: Article

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