Intersubband all-optical switching based on Coulomb-induced optical nonlinearities in GaN/AlGaN coupled quantum wells

Semiconductor Science and Technology

Volumn 21, Issue 8, 2006, Pages 1105-1110

  Li, Y ^a   Paiella, R ^a  

^a Boston University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FIBER OPTICS; LIGHT POLARIZATION; NONLINEAR EQUATIONS; OPTICAL SWITCHES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

INTERSUBBAND ABSORPTION SPECTRUM; OPTICAL CONTROL PULSES; STARK SHIFT;

NONLINEAR OPTICS;

EID: 33749051852     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/8/022     Document Type: Article

References (28)

1. Paiella R 2006 Intersubband Transitions in Quantum Structures (New York: McGraw-Hill)
2. Gmachl C, Ng H M, Chu S N G and Cho A Y 2000 Intersubband absorption at λ ∼ 1.55 νm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers Appl. Phys. Lett. 77 3722-4
3. Kishino K, Kikuchi A, Kanazawa H and Tachibana T 2002 Intersubband transition in (GaN)n/(AlN)m superlattices in the wavelength range from 1.08 to 1.61 νm Appl. Phys. Lett. 81 1234-36
4. Iizuka N, Kaneko K and Suzuki N 2002 Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy Appl. Phys. Lett. 81 1803-5
5. Rapaport R, Chen G, Mitrofanov O, Gmachl C, Ng H M and Chu S N G 2003 Resonant optical nonlinearities from intersubband transitions in GaN/AlN quantum wells Appl. Phys. Lett. 83 263-5
6. Hofstetter D, Schad S S, Wu H, Schaff W J and Eastman L F 2003 GaN/AlN-based quantum-well infrared photodetector for 1.55 νm Appl. Phys. Lett. 83 572-4
7. Hamazaki J, Matsui S, Kunugita H, Ema K, Kanazawa H, Tachibana T, Kikuchi A and Kishino K 2004 Ultrafast intersubband relaxation and nonlinear susceptibility at 1.55 νm in GaN/AlN multiple-quantum wells Appl. Phys. Lett. 84 1102-4
8. Friel I, Driscoll K, Kulenica E, Dutta M, Paiella R and Moustakas T D 2005 Investigation of the design parameters of AlN/GaN multiple quantum wells grown by molecular beam epitaxy for intersubband absorption J. Cryst. Growth 278 387-92
9. Tchernycheva M, Nevou L, Doyennette L, Julien F H, Guillot F, Monroy E, Remmele T and Albrecht M 2006 Electron confinement in strongly coupled GaN/AlN quantum wells Appl. Phys. Lett. 88 153113
10. Iizuka N, Kaneko K and Suzuki N 2005 Sub-picosecond all-optical gate utilizing an intersubband transition Opt. Express 13 3835-40
11. Neogi A, Yoshida H, Mozume T, Georgiev N and Wada O 2001 Intersubband transitions and ultrafast all-optical modulation using multiple InGaAs-AlAsSb-InP coupled double-quantum-well structures IEEE J. Sel. Top. Quantum Electron. 7 710-7
12. Sun G, Khurgin J B and Soref R A 2005 Nonlinear all-optical GaN/AlGaN multi-quantum-well devices for 100 Gb/s applications at λ ≤ 1.55 νm Appl. Phys. Lett. 87 201108
13. Wada O 2000 Femtosecond semiconductor-based optoelectronic devices for optical communication systems Opt. Quantum Electron. 32 453-71
14. Blumenthal D J, Bowers J E, Rau L, Chou H F, Rangarajan S, Wang W and Poulsen H N 2003 Optical signal processing for optical packet switching networks IEEE Commun. Mag. 41 S23-9
15. Cotter D, Manning R J, Blow K J, Ellis A D, Kelly A E, Nesset D, Phillips I D, Poustie A J and Rogers D C 1999 Nonlinear optics for high-speed digital information processing Science 286 1523-8
16. Stubkjaer K E 2000 Semiconductor optical amplifier-based all-optical gates for high-speed optical processing IEEE J. Sel. Top. Quantum Electron. 6 1428-35 (Special Millennium Issue)
17. 3 in coupled InGaAs-AlGaAs multiple quantum wells IEEE J. Quantum Electron. 34 975-81
18. Khurgin J 1989 Electro-optical switching and bistability in coupled quantum wells Appl. Phys. Lett. 54 2589-91
19. Seto M and Helm M 1992 Charge-transfer-induced optical bistability in an asymmetric quantum-well structure Appl. Phys. Lett. 60 859-61
20. Jiang H and Singh J 1999 Linear electro-optic effect due to the built-in electric field of InGaN/GaN quantum wells Appl. Phys. Lett. 75 1932-4
21. Vurgaftman I and Meyer J R 2000 Band parameters for nitrogen-containing semiconductors J. Appl. Phys. 94 3675-96
22. Harrison P 2000 Quantum Wells, Wires and Dots (Chichester: Wiley) chapter 8
23. Wang Z, Reimann K, Woerner M, Elsaesser T, Hofstetter D, Hwang J, Schaff W J and Eastman L F 2005 Optical phonon sidebands of electronic intersubband absorption in strongly polar semiconductor heterostructures Phys. Rev. Lett. 94 037403
24. Bernardini F, Fiorentini V and Vanderbilt D 1997 Spontaneous polarization and piezoelectric constants of III-V nitrides Phys. Rev. B 56 R10024-7
25. Ambacher O et al 2000 Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures J. Appl. Phys. 87 334-44
26. Jovanović V D, Ikonić Z, Indjin D, Harrison P, Milanović V and Soref R F 2003 Designing strain-balanced GaN/AlGaN quantum well structures: application to intersubband devices at 1.3 and 1.55 νm wavelengths J. Appl. Phys. 93 3194-7
27. Ridley B K, Schaff W J and Eastman L F 2003 Theoretical model for polarization superlattices: energy levels and intersubband transitions J. Appl. Phys. 94 3972-8
28. Boyd R W 1992 Nonlinear Optics (San Diego, CA: Academic) chapter 5