A physical model of quantum cascade lasers: Application to GaAs, GaN and SiGe devices

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 6, 2005, Pages 980-986

  Harrison, P ^a   Indjin, D ^a   Jovanovic V D ^a   Mircetic A ^b   Ikonic Z ^a   Kelsall, R W ^a   McTavish, J ^a   Savic I ^a   Vukmirovic N ^a,b   Milanovic V ^a,b  

^a UNIVERSITY OF LEEDS   (United Kingdom)

^b University of Belgrade   (Serbia)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; CURRENT DENSITY; GALLIUM NITRIDE; MATHEMATICAL MODELS; PHYSICAL PROPERTIES; QUANTUM THEORY; SILICON COMPOUNDS;

DESIGN TOOLS; PHYSICAL PROCESSES; QUANTUM CASCADE LASERS (QCL);

LASER PULSES;

EID: 25444444743     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200460713     Document Type: Conference Paper

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