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Volumn 34, Issue 5, 2009, Pages 304-309

Nonpolar and semipolar Group III nitride-based materials

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC FIELDS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; INDIUM ALLOYS; LIGHTING; NITRIDES; OPTOELECTRONIC DEVICES; POLARIZATION; QUANTUM WELL LASERS; WAVE FUNCTIONS; ZINC SULFIDE;

EID: 66749188282     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/mrs2009.91     Document Type: Article
Times cited : (250)

References (62)
  • 6
    • 0026406592 scopus 로고    scopus 로고
    • S. Nakamura, T. Mukai, M. Senoh, Jpn. J. Appl. Phys. 30, L1998 (1991).
    • S. Nakamura, T. Mukai, M. Senoh, Jpn. J. Appl. Phys. 30, L1998 (1991).
  • 30
    • 66749171960 scopus 로고    scopus 로고
    • R.J. Molnar, Hydride Vapor Phase Epitaxial Growth of III-V Nitrides, in Gallium Nitride (GaN) II, 57 of Semiconductors and Semimetals, J.I. Pankove and T.D. Moustakas eds. (Elsevier, New York, 1998), pp. 1-31.
    • R.J. Molnar, "Hydride Vapor Phase Epitaxial Growth of III-V Nitrides," in Gallium Nitride (GaN) II, vol. 57 of Semiconductors and Semimetals, J.I. Pankove and T.D. Moustakas eds. (Elsevier, New York, 1998), pp. 1-31.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.