High-density and size-controlled GaN self-assembled quantum dots grown by metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 80, Issue 21, 2002, Pages 3937-3939

  Miyamura, M ^a   Tachibana, K ^a   Arakawa, Y ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL THICKNESS; HIGH DENSITY; HIGH QUALITY; PHOTOLUMINESCENCE PEAK; ROOM TEMPERATURE; SELF ASSEMBLED QUANTUM DOTS; STRANSKI-KRASTANOW GROWTH MODE; THREE-DIMENSIONAL GROWTH; V/III RATIO; WETTING LAYER;

GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOLAYERS; QUALITY CONTROL; WETTING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 79956020738     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1482416     Document Type: Article

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