Improved quality GaN grown by molecular beam epitaxy using in as a surfactant

Applied Physics Letters

Volumn 73, Issue 18, 1998, Pages 2642-2644

  Widmann, F ^a   Daudin, B ^a   Feuillet, G ^a   Pelekanos, N ^a   Rouviere J L ^a  

^a CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000018299     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122539     Document Type: Article

References (17)

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