Capacitance characterization of AIN/GaN double-barrier resonant tunnelling diodes

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 2265-2269

  Kurakin, A M ^a   Vitusevich, S A ^a   Danylyuk, S V ^a   Naumov, A V ^b   Foxon, C T ^c   Novikov, S V ^c   Klein, N ^a   Luth H ^a   Belyaev, A E ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^c UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-VOLTAGE; ELECTRICAL CHARACTERIZATION; RESONANT TUNNELLING DIODES; REVERSE POLARITIES; 73.40.GK; 73.40.KP; CAPACITANCE-VOLTAGE CHARACTERISTICS; POLARIZATION EFFECT; POTENTIAL PROFILES; SELF-CONSISTENT CALCULATION; WIDE FREQUENCY RANGE;

ALUMINUM NITRIDE; CAPACITANCE; ELECTRIC POTENTIAL; ELECTRON TUNNELING; GALLIUM NITRIDE; INTERFACES (MATERIALS); NATURAL FREQUENCIES; CONDENSED MATTER PHYSICS; PHYSICS;

DIODES; CAPACITANCE;

EID: 33746331380     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565156     Document Type: Conference Paper

References (8)

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