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Volumn 108, Issue 10, 2010, Pages

Negative photoconductivity due to intraband transitions in GaN/AlN quantum dots

Author keywords

[No Author keywords available]

Indexed keywords

ALN BARRIERS; DEEP LEVEL; EXCITED CARRIERS; GAN/ALN QUANTUM DOTS; IN-PLANE; INTRABAND TRANSITIONS; LOW TEMPERATURES; POLARIZATION DEPENDENCE; RATE EQUATIONS; UV RADIATION; VISIBLE-UV;

EID: 78650265048     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3498817     Document Type: Conference Paper
Times cited : (7)

References (22)
  • 11
    • 0035278804 scopus 로고    scopus 로고
    • The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
    • DOI 10.1109/16.906451, PII S0018938301015301
    • R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, IEEE Trans. Electron Devices IETDAI 0018-9383 48, 560 (2001). 10.1109/16.906451 (Pubitemid 32271174)
    • (2001) IEEE Transactions on Electron Devices , vol.48 , Issue.3 , pp. 560-566
    • Vetury, R.1    Zhang, N.Q.2    Keller, S.3    Misha, U.K.4
  • 18
    • 78650280150 scopus 로고    scopus 로고
    • BANDENG free software
    • M. Grundmann, BANDENG free software, http:/michaelgrundmann.com
    • Grundmann, M.1
  • 22
    • 36449007912 scopus 로고
    • APPLAB 0003-6951,. 10.1063/1.114113
    • A. S. Chaves and H. Chacham, Appl. Phys. Lett. APPLAB 0003-6951 66, 727 (1995). 10.1063/1.114113
    • (1995) Appl. Phys. Lett. , vol.66 , pp. 727
    • Chaves, A.S.1    Chacham, H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.