Near infrared absorption and room temperature photovoltaic response in AlN/GaN superlattices grown by metal-organic vapor-phase epitaxy

Applied Physics Letters

Volumn 89, Issue 4, 2006, Pages

  Baumann, E ^a   Giorgetta, F R ^a   Hofstetter, D ^a   Golka, S ^b   Schrenk, W ^b   Strasser, G ^b   Kirste, L ^c   Nicolay, S ^d   Feltin, E ^d   Carlin, J F ^d   Grandjean, N ^d  

^a UNIVERSITY OF NEUCHÂTEL   (Switzerland)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^c FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^d EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; INFRARED RADIATION; OPTICAL FIBERS; ORGANOMETALLICS; PHOTOVOLTAIC CELLS; SEMICONDUCTING ALUMINUM COMPOUNDS;

METAL-ORGANIC VAPOR-PHASE EPITAXY; OPTICAL FIBER TELECOMMUNICATION SYSTEMS; PHOTOVOLTAIC SIGNALS;

SUPERLATTICES;

EID: 33746652624     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2234847     Document Type: Article

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