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Applied Physics Letters

Volumn 100, Issue 24, 2012, Pages

Far-infrared intersubband photodetectors based on double-step III-nitride quantum wells

(6) Sudradjat, Faisal F a Zhang, Wei a Woodward, Jeffrey a Durmaz, Habibe a Moustakas, Theodore D a Paiella, Roberto a

a Boston University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE MATERIAL; DELETERIOUS EFFECTS; DOUBLE-STEP; FAR-INFRARED; III-NITRIDE; INTER-SUBBAND; INTERSUBBAND TRANSITIONS; PHOTOCONDUCTIVE DETECTORS; PHOTOCURRENT SPECTRUM; PIEZO-ELECTRIC FIELDS; POTENTIAL ENERGY PROFILES; RESPONSIVITY; THZ FREQUENCIES;

GALLIUM NITRIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84863306676 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4729470 Document Type: Article

Times cited : (70)

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