Nextnano: General purpose 3-D simulations

IEEE Transactions on Electron Devices

Volumn 54, Issue 9, 2007, Pages 2137-2142

  Birner, Stefan ^a   Zibold, Tobias ^a   Andlauer, Till ^a   Kubis, Tillmann ^a   Sabathil, Matthias ^a,b   Trellakis, Alex ^a   Vogl, Peter ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

Carrier transport; Electronic structure; Magnetic field; Quantum; Quantum wire; Simulation; Technology computer aided design (TCAD)

Indexed keywords

APPROXIMATION THEORY; HETEROJUNCTIONS; NANOELECTRONICS; NANOTECHNOLOGY; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; QUANTUM THEORY; SEMICONDUCTOR DEVICES;

EXCHANGE-CORRELATION EFFECTS; NANOSIZED SEMICONDUCTOR HETEROSTRUCTURES; SEMICONDUCTOR NANODEVICE SIMULATION TOOL;

COMPUTER SIMULATION;

EID: 41349092986     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.902871     Document Type: Article

References (26)

1. See nextnano Web site for executables and documentation. [Online]. Available: http://www.wsi.tum.de/nextnano3
2. D. Mamaluy, M. Sabathil, and P. Vogl, "Efficient method for the calculation of ballistic quantum transport," J. Appl. Phys., vol. 93, no. 8, pp. 4628-4633, Apr. 2003.
3. D. Mamaluy, D. Vasileska, M. Sabathil, T. Zibold, and P. Vogl, "Contact block reduction method for ballistic transport and carrier densities of open nanostructures," Phys. Rev. B, Condens. Matter, vol. 71, no. 24, pp. 245 321-1-245 321-14, 2005.
4. S. Datta, Electronic Transport in Mesoscopic Systems. Cambridge, U.K.: Cambridge Univ. Press, 1997.
5. R. Oberhuber, G. Zandler, and P. Vogl, "Subband structure and mobility of two-dimensional holes in strained Si/SiGe MOSFET's," Phys. Rev. B, Condens. Matter, vol. 58, no. 15, pp. 9941-9948, Oct. 1998.
6. E. Wang, P. Matagne, L. Shifren, B. Obradovic, R. Kotlyar, S. Cea, J. He, Z. Ma, R. Nagisetty, S. Tyagi, M. Stettler, and M. D. Giles, "Quantum mechanical calculation of hole mobility in silicon inversion layers under arbitrary stress," in IEDM Tech. Dig., 2004, pp. 147-150.
7. X.-F. Fan, L. F. Register, B. Winstead, M. C. Foisy, W. Chen, X. Zheng, B. Gosh, and S. K. Banerjee, "Hole mobility and thermal velocity enhancement for uniaxial stress in Si up to 4 GPa," IEEE Trans. Electron Devices, vol. 54, no. 2, pp. 291-296, Feb. 2007.
8. A. Trellakis, T. Zibold, T. Andlauer, S. Birner, R. K. Smith, R. Morschl, and P. Vogl, "The 3D nanometer device project nextnano: Concepts, methods, results," J. Comput. Electron., vol. 5, no. 4, pp. 285-289, 2006.
9. 3," Acta Phys. Pol. A vol. 110, no. 2, pp. 111-124, 2006.
10. M. Governale and C. Ungarelli, "Gauge-invariant grid discretization of the Schrödinger equation," Phys. Rev. B, Condens. Matter, vol. 58, no. 12, pp. 7816-7821, Sep. 1998.
11. S. F. Fischer, G. Apetrii, U. Kunze, D. Schuh, and G. Abstreiter, "Tunnel-coupled one-dimensional electron systems with large subband separations," Phys. Rev. B, Condens. Matter, vol. 74, no. 11, pp. 115 324-1-115 324-7, Sep. 2006.
12. L. G. Mourokh, A. Y. Smirnov, and S. F. Fischer, "Vertically coupled quantum wires in a longitudinal magnetic field," Appl. Phys. Lett. vol. 90, no. 13, pp. 132 108-1-132 108-3, Mar. 2007.
13. R. Lake, G. Klimeck, R. C. Bowen, and D. Jovanovic, "Single and multiband modeling of quantum electron transport through layered semiconductor devices," J. Appl. Phys., vol. 81, no. 12, pp. 7845-7869, Jun. 1997.
14. T. Kubis and P. Vogl, Self-consistent quantum transport theory: Applications and assessment of approximate models," J. Comput. Electron., vol. 6, no. 1-3, pp. 183-186, 2007.
15. S. Hackenbuchner, "Elektronische Struktur von Halbleiter-Nanobauelementen im thermodynamischen Nichtgleichgewicht," in Selected Topics of Semiconductor Physics and Technology, vol. 48, G. Abstreiter, M.-C. Amann, M. Stutzmann, and P. Vogl, Eds. Walter Schottky Inst., TU Munich, 2002.
16. M. Sabathil, S. Hackenbuchner, J. A. Majewski, G. Zandler, and P. Vogl, "Towards fully quantum mechanical 3D device simulations," J. Comput. Electron., vol. 1, no. 1/2, pp. 81-85, 2002.
17. G. Fiori and G. Iannaccone, "Simulation of one dimensional subband transport in ultra-short silicon nanowire transistors," in Proc. 6th Eur. Conf. ULIS, Bologna, Italy, 2005, pp. 163-166.
18. M. Sabathil, D. Mamaluy, and P. Vogl, "Prediction of a realistic quantum logic gate using the contact block reduction method," Semicond. Sci. Technol., vol. 19, no. 4, pp. S137-S138, Apr. 2004.
19. R. Landauer, "Conductance from transmission: Common sense points, Phys. Scr., vol. T42, pp. 110-114, 1992.
20. M. Büttiker, "Symmetry of electrical conduction," IBM J. Res. Develop., vol. 32, no. 3, pp. 317-334, May 1988.
21. A. Di Carlo, P. Vogl, and W. Pötz, "Theory of Zener tunneling and Wannier-Stark states in semiconductors," Phys. Rev. B, Condens. Matter, vol. 50, no. 12, pp. 8358-8377, Sep. 1994.
22. M. Sabathil, "Opto-electronic and quantum transport properties of semiconductor nanostructures," in Selected Topics of Semiconductor Physics and Technology, vol. 67, G. Abstreiter, M.-C. Amann, M. Stutzmann, and P. Vogl, Eds. Walter Schottky Inst., TU Munich, 2005.
23. S. Hasan, J. Wang, and M. Lundstrom, "Device design and manufacturing issues for 10 nm-scale MOSFETs: A computational study," Solid State Electron., vol. 48, no. 6, pp. 867-875, Jun. 2004.
24. T. Kubis, C. Yeh, and P. Vogl, "Quantum theory of transport and optical gain in quantum cascade lasers," Phys. Stat. Sol. C. submitted for publication.
25. A. Wacker, Semiconductor superlattices: A model system for nonlinear transport," Phys. Rep., vol. 357, no. 1, pp. 1-111, Jan. 2002.
26. H. Callebaut, S. Kumar, B. S. Williams, Q. Hu, and J. L. Reno, "Analysis of transport properties of terahertz quantum cascade lasers," Appl. Phys. Lett., vol. 83, no. 2, pp. 207-209, Jul. 2003.