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Volumn 21, Issue 42, 2010, Pages

Investigation of the electronic transport in GaN nanowires containing GaN/AlN quantum discs

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT FLOWS; CURRENT-VOLTAGE MEASUREMENTS; ELECTRONIC TRANSPORT; ENVIRONMENTAL CONDITIONS; FAR-INFRARED; GAN NANOWIRES; GAN SHELLS; HIGH TEMPERATURE; LATERAL SURFACE; NEGATIVE DIFFERENTIAL RESISTANCES; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; QUANTUM DISCS; SINGLE NANOWIRES;

EID: 77958527568     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/42/425206     Document Type: Article
Times cited : (33)

References (33)
  • 8
    • 0345023548 scopus 로고    scopus 로고
    • Response to Comment on AlN/GaN double-barrier resonant tunneling diodes grown by RF-plasma-assisted molecular-beam epitaxy
    • Kikuchi A, Bannai R, Kishino K, Lee C-M and Chyi J-I 2003 Response to Comment on AlN/GaN double-barrier resonant tunneling diodes grown by RF-plasma-assisted molecular-beam epitaxy Appl. Phys. Lett. 83 3628
    • (2003) Appl. Phys. Lett. , vol.83 , pp. 3628
    • Kikuchi, A.1    Bannai, R.2    Kishino, K.3    Lee, C.-M.4    Chyi, J.-I.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.