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Volumn 20, Issue 9, 2008, Pages 724-726

Electrooptical Modulator At Telecommunication Wavelengths Based On Gan—A1n Coupled Quantum Wells

Author keywords

Electrooptic modulation; infrared spectroscopy; intersubband (ISB) transition; nitrogen compounds; optoelectronic devices; quantum well (QW) devices

Indexed keywords


EID: 85008053946     PISSN: 10411135     EISSN: 19410174     Source Type: Journal    
DOI: 10.1109/LPT.2008.919595     Document Type: Article
Times cited : (42)

References (7)
  • 1
    • 33947172333 scopus 로고    scopus 로고
    • All-optical switch utilizing intersubband transition in GaN quantum wells
    • N. Iizuka, K. Kaneko, and N. Suzuki, “All-optical switch utilizing intersubband transition in GaN quantum wells,” IEEE J. Quantum Electron., vol. 42, no. 8, pp. 765–771, Aug. 2006.
    • (2006) IEEE J. Quantum Electron. , vol.42 , Issue.8 , pp. 765-771
    • Iizuka, N.1    Kaneko, K.2    Suzuki, N.3
  • 2
    • 34248357236 scopus 로고    scopus 로고
    • High frequency (f = 2.37 GHz) room temperature of 1.55 pm AlN/GaN-based intersubband detector
    • F. R. Giorgetta, E. Baumann, F. Guillot, E. Monroy, and D. Hofstetter, “High frequency (f = 2.37 GHz) room temperature of 1.55 pm AlN/GaN-based intersubband detector,” Electron. Lett., vol. 43, pp. 185–186, 2007.
    • (2007) Electron. Lett. , vol.43 , pp. 185-186
    • Giorgetta, F.R.1    Baumann, E.2    Guillot, F.3    Monroy, E.4    Hofstetter, D.5
  • 3
    • 33646671264 scopus 로고    scopus 로고
    • Room temperature demonstration of GaN/A1N quantum dot intraband infrared photodetector at fiber-optics communication wavelength
    • A. Vardi, N. Akopian, G. Bahir, L. Doyennette, M. Tchernycheva, L. Nevou, F. H. Julien, F. Guillot, and E. Monroy, “Room temperature demonstration of GaN/A1N quantum dot intraband infrared photodetector at fiber-optics communication wavelength,” Appl. Phys. Lett., vol. 88, pp. 143101–143104, 2006.
    • (2006) Appl. Phys. Lett. , vol.88 , pp. 143101-143104
    • Vardi, A.1    Akopian, N.2    Bahir, G.3    Doyennette, L.4    Tchernycheva, M.5    Nevou, L.6    Julien, F.H.7    Guillot, F.8    Monroy, E.9
  • 4
    • 33947305236 scopus 로고    scopus 로고
    • Electroabsorption modulator using intersubband transitions in GaN—A1GaN—A1N step quantum wells
    • P. Holmstrom, “Electroabsorption modulator using intersubband transitions in GaN—A1GaN—A1N step quantum wells,” IEEE J. Quantum Electron., vol. 42, no. 8, pp. 810–819, Aug. 2006.
    • (2006) IEEE J. Quantum Electron. , vol.42 , Issue.8 , pp. 810-819
    • Holmstrom, P.1
  • 5
    • 33748508246 scopus 로고    scopus 로고
    • Electrically adjustable intersubband absorption of a GaN/A1N superlattice grown on a transistorlike structure
    • E. Baumann, F. R. Giorgetta, D. Hofstetter, S. Leconte, F. Guillot, E. Bellet-Amalric, and E. Monroy “Electrically adjustable intersubband absorption of a GaN/A1N superlattice grown on a transistorlike structure,” Appl. Phys. Lett., vol. 89, pp. 101121–101124, 2006.
    • (2006) Appl. Phys. Lett. , vol.89 , pp. 101121-101124
    • Baumann, E.1    Giorgetta, F.R.2    Hofstetter, D.3    Leconte, S.4    Guillot, F.5    Bellet-Amalric, E.6    Monroy, E.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.