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Volumn 58, Issue 1-2, 2007, Pages 1-75

Electromigration in ULSI interconnects

Author keywords

Aluminum; Copper; Driving force; Electromigration; Reliability data analysis; Test structure

Indexed keywords

ALUMINUM COMPOUNDS; COPPER COMPOUNDS; DATA REDUCTION; ELECTROMIGRATION; ELECTRONS; MICROMETERS; STATISTICAL METHODS;

EID: 34648819822     PISSN: 0927796X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mser.2007.04.002     Document Type: Review
Times cited : (232)

References (336)
  • 1
    • 0001976760 scopus 로고
    • On the mechanism of the mobility of ions in metals
    • Fiks V.B. On the mechanism of the mobility of ions in metals. Sov. Phys. Solid State 1 (1959) 14
    • (1959) Sov. Phys. Solid State , vol.1 , pp. 14
    • Fiks, V.B.1
  • 2
    • 49749201891 scopus 로고
    • Current-induced marker motion in gold wires
    • Huntington H.B., and Grone A.R. Current-induced marker motion in gold wires. J. Phys. Chem. Solids 20 (1961) 76-87
    • (1961) J. Phys. Chem. Solids , vol.20 , pp. 76-87
    • Huntington, H.B.1    Grone, A.R.2
  • 3
    • 85023248653 scopus 로고
    • A study of failure mechanisms in silicon planar epitaxial transistors
    • Shilliday T.S., and Vaccaro J. (Eds), Rome Air Development Ctr
    • Blech I.A., and Sello H. A study of failure mechanisms in silicon planar epitaxial transistors. In: Shilliday T.S., and Vaccaro J. (Eds). Physics of Failure in Electronics vol. 5 (1966), Rome Air Development Ctr 496-505
    • (1966) Physics of Failure in Electronics , vol.5 , pp. 496-505
    • Blech, I.A.1    Sello, H.2
  • 4
    • 0012735329 scopus 로고
    • Effect of driving forces on atom motion
    • Huntington H.B. Effect of driving forces on atom motion. Thin Solid Films 25 (1975) 265-280
    • (1975) Thin Solid Films , vol.25 , pp. 265-280
    • Huntington, H.B.1
  • 5
    • 0000132501 scopus 로고
    • The driving force for electromigration of an atom adsorbed on simple metal surface
    • Duryea T.W., and Huntington H.B. The driving force for electromigration of an atom adsorbed on simple metal surface. Surf. Sci. 199 (1988) 261-281
    • (1988) Surf. Sci. , vol.199 , pp. 261-281
    • Duryea, T.W.1    Huntington, H.B.2
  • 6
  • 9
    • 0000193626 scopus 로고
    • Electromigration and associated void formation in silver
    • Patil H.R., and Huntington H.B. Electromigration and associated void formation in silver. J. Phys. Chem. Solids 31 (1969) 463-474
    • (1969) J. Phys. Chem. Solids , vol.31 , pp. 463-474
    • Patil, H.R.1    Huntington, H.B.2
  • 10
    • 84937650904 scopus 로고
    • Electromigration-a brief survey and some recent results
    • Black J.R. Electromigration-a brief survey and some recent results. IEEE Trans. Electron Devices ED-16 4 (1969) 338-347
    • (1969) IEEE Trans. Electron Devices ED-16 , vol.4 , pp. 338-347
    • Black, J.R.1
  • 11
    • 0344336497 scopus 로고
    • The effects of dielectric overcoating on electromigration in aluminum interconnects
    • Spitzer S.M., and Schwartz S. The effects of dielectric overcoating on electromigration in aluminum interconnects. IEEE Trans. Electron Devices ED-16 (1969) 348-350
    • (1969) IEEE Trans. Electron Devices ED-16 , pp. 348-350
    • Spitzer, S.M.1    Schwartz, S.2
  • 12
    • 0020115364 scopus 로고
    • The effect of passivation thickness on the electromigration lifetime of Al/Cu thin film conductors
    • Lloyd J.R., and Smith P.M. The effect of passivation thickness on the electromigration lifetime of Al/Cu thin film conductors. J. Vac. Sci. Technol. A 1 (1983) 455-458
    • (1983) J. Vac. Sci. Technol. A , vol.1 , pp. 455-458
    • Lloyd, J.R.1    Smith, P.M.2
  • 13
    • 0016940795 scopus 로고
    • Electromigration in thin aluminum films on titanium nitride
    • Blech I.A. Electromigration in thin aluminum films on titanium nitride. J. Appl. Phys. 47 (1976) 1203-1208
    • (1976) J. Appl. Phys. , vol.47 , pp. 1203-1208
    • Blech, I.A.1
  • 14
    • 36749115512 scopus 로고
    • Stress generation by electromigration
    • Blech I.A., and Herring C. Stress generation by electromigration. Appl. Phys. Lett. 29 (1976) 131-133
    • (1976) Appl. Phys. Lett. , vol.29 , pp. 131-133
    • Blech, I.A.1    Herring, C.2
  • 15
    • 0000654704 scopus 로고
    • Measurement of stress gradients generated by electromigration
    • Blech I.A., and Tai K.L. Measurement of stress gradients generated by electromigration. Appl. Phys. Lett. 30 (1976) 387-389
    • (1976) Appl. Phys. Lett. , vol.30 , pp. 387-389
    • Blech, I.A.1    Tai, K.L.2
  • 16
    • 0017459611 scopus 로고
    • Copper electromigration in aluminum
    • Blech I.A. Copper electromigration in aluminum. J. Appl. Phys. 48 (1977) 473-477
    • (1977) J. Appl. Phys. , vol.48 , pp. 473-477
    • Blech, I.A.1
  • 17
  • 18
    • 0017997008 scopus 로고
    • Intermetallic compounds of Al and transition metals: effect of electrmigration in 1-2-μm-wide lines
    • Howard J.K., White J.F., and Ho P.S. Intermetallic compounds of Al and transition metals: effect of electrmigration in 1-2-μm-wide lines. J. Appl. Phys. 49 (1978) 4083-4093
    • (1978) J. Appl. Phys. , vol.49 , pp. 4083-4093
    • Howard, J.K.1    White, J.F.2    Ho, P.S.3
  • 19
    • 0018334761 scopus 로고
    • Effects of hydrogen incorporation in some deposited metallic thin films
    • Meyer D.E. Effects of hydrogen incorporation in some deposited metallic thin films. J. Vac. Sci. Technol. 17 (1980) 322-326
    • (1980) J. Vac. Sci. Technol. , vol.17 , pp. 322-326
    • Meyer, D.E.1
  • 20
    • 0000323896 scopus 로고
    • Linewidth dependence of electromigration in evaporated Al-0.5%Cu
    • Vaidya S., Sheng T.T., and Sinha A.K. Linewidth dependence of electromigration in evaporated Al-0.5%Cu. Appl. Phys. Lett. 30 (1980) 464-466
    • (1980) Appl. Phys. Lett. , vol.30 , pp. 464-466
    • Vaidya, S.1    Sheng, T.T.2    Sinha, A.K.3
  • 21
    • 0000496645 scopus 로고
    • A model for the width dependence of electromigration lifetimes in aluminum thin-film strips
    • Kinsbron E. A model for the width dependence of electromigration lifetimes in aluminum thin-film strips. Appl. Phys. Lett. 36 (1980) 968-970
    • (1980) Appl. Phys. Lett. , vol.36 , pp. 968-970
    • Kinsbron, E.1
  • 23
    • 0018038892 scopus 로고
    • Electromigration testing of Ti:W/Al and Ti:W/Al-Cu film conductors
    • Ghate P.B., and Blair J.C. Electromigration testing of Ti:W/Al and Ti:W/Al-Cu film conductors. Thin Solid Films 55 (1978) 113-123
    • (1978) Thin Solid Films , vol.55 , pp. 113-123
    • Ghate, P.B.1    Blair, J.C.2
  • 24
    • 0019588510 scopus 로고
    • Metallization for very-large-scale integrated circuits
    • Ghate P.B. Metallization for very-large-scale integrated circuits. Thin Solid Films 93 (1982) 359-383
    • (1982) Thin Solid Films , vol.93 , pp. 359-383
    • Ghate, P.B.1
  • 25
  • 27
    • 0024943770 scopus 로고
    • Comparison of electromigration phenomenon between aluminum interconnection of various multilayered materials
    • June 12-13
    • Fujii T., et al. Comparison of electromigration phenomenon between aluminum interconnection of various multilayered materials. Proceedings of the VMIC, IEEE. June 12-13 (1989) 477-483
    • (1989) Proceedings of the VMIC, IEEE , pp. 477-483
    • Fujii, T.1
  • 28
    • 0025556817 scopus 로고
    • Barrier metal effects on electromigration of layered aluminum metallization
    • June 12-13
    • Hoang H.H., Coy R.A., and McPherson J.W. Barrier metal effects on electromigration of layered aluminum metallization. Proceedings of the VMIC, IEEE. June 12-13 (1990) 133-141
    • (1990) Proceedings of the VMIC, IEEE , pp. 133-141
    • Hoang, H.H.1    Coy, R.A.2    McPherson, J.W.3
  • 29
    • 0025544903 scopus 로고
    • A study of aluminum sputter deposition parameters and TiW barrier surface effects on electromigration
    • June 12-13
    • Singlevich S.G., and Bordelon M.D. A study of aluminum sputter deposition parameters and TiW barrier surface effects on electromigration. Proceedings of the VMIC, IEEE. June 12-13 (1990) 371-373
    • (1990) Proceedings of the VMIC, IEEE , pp. 371-373
    • Singlevich, S.G.1    Bordelon, M.D.2
  • 30
    • 24144452486 scopus 로고    scopus 로고
    • Effect of vacuum break after the barrier layer deposition on the electromigration performance of aluminum based line interconnects
    • Tan C.M., Roy A., Tan K.T., Ye D.S.K., and Low F. Effect of vacuum break after the barrier layer deposition on the electromigration performance of aluminum based line interconnects. Microelectron. Reliab. 45 (2005) 1449-1454
    • (2005) Microelectron. Reliab. , vol.45 , pp. 1449-1454
    • Tan, C.M.1    Roy, A.2    Tan, K.T.3    Ye, D.S.K.4    Low, F.5
  • 31
    • 6044259177 scopus 로고    scopus 로고
    • Reduction in flux divergence at vias for improved electromigration in multilayered AlCu interconnects
    • Ting L., Hong Q.-Z., and Hsu W.-Y. Reduction in flux divergence at vias for improved electromigration in multilayered AlCu interconnects. Appl. Phys. Lett. 69 (1996) 2134-2136
    • (1996) Appl. Phys. Lett. , vol.69 , pp. 2134-2136
    • Ting, L.1    Hong, Q.-Z.2    Hsu, W.-Y.3
  • 32
    • 0001169065 scopus 로고    scopus 로고
    • Direction observation of void morphology in step-like electromigration resistance behavior and its correlation with critical current density
    • Huang J.S., Shofner T.L., and Zhao J. Direction observation of void morphology in step-like electromigration resistance behavior and its correlation with critical current density. J. Appl. Phys. 89 (2001) 2130-2133
    • (2001) J. Appl. Phys. , vol.89 , pp. 2130-2133
    • Huang, J.S.1    Shofner, T.L.2    Zhao, J.3
  • 33
    • 0029327239 scopus 로고
    • Electromigration in copper conductors
    • Lloyd J.R., and Clement J.J. Electromigration in copper conductors. Thin Solid Films 262 (1995) 135-141
    • (1995) Thin Solid Films , vol.262 , pp. 135-141
    • Lloyd, J.R.1    Clement, J.J.2
  • 35
    • 0011762616 scopus 로고
    • Current-induced marker motion in copper
    • Grone A.R. Current-induced marker motion in copper. J. Phys. Chem. Solids 20 (1961) 88-93
    • (1961) J. Phys. Chem. Solids , vol.20 , pp. 88-93
    • Grone, A.R.1
  • 36
    • 34648842613 scopus 로고    scopus 로고
    • M.F. Chow, W.L. Guthrie, F.B. Kaufman, US Patent 4,702,792 (1987).
  • 37
    • 34648868245 scopus 로고    scopus 로고
    • M.M. Chow et al., US Patent 4,789,648 (1988).
  • 38
    • 34648848750 scopus 로고    scopus 로고
    • J.W. Carr et al., US Patent 4,954,142 (1990).
  • 40
    • 0031695978 scopus 로고    scopus 로고
    • Copper interconnections and reliability
    • Hu C.-K., and Harper J.M.E. Copper interconnections and reliability. Mater. Chem. Phys. 52 (1998) 5-16
    • (1998) Mater. Chem. Phys. , vol.52 , pp. 5-16
    • Hu, C.-K.1    Harper, J.M.E.2
  • 41
    • 34648850704 scopus 로고    scopus 로고
    • The influence of surface fluctuations on early failures in single-damascene Cu wires: a weakest link approximation analysis
    • Wang H., Bruynserae C., and Maex K. The influence of surface fluctuations on early failures in single-damascene Cu wires: a weakest link approximation analysis. Proceedings of the IRPS, IEEE (2004) 625-626
    • (2004) Proceedings of the IRPS, IEEE , pp. 625-626
    • Wang, H.1    Bruynserae, C.2    Maex, K.3
  • 42
    • 21044432880 scopus 로고    scopus 로고
    • Isothermal stress relaxation in electroplated Cu films. I. Mass transport measurement
    • Gan D., Ho P.S., Huang R., Leu J., Maiz J., and Scherban T. Isothermal stress relaxation in electroplated Cu films. I. Mass transport measurement. J. Appl. Phys. 97 (2005) 103531-103538
    • (2005) J. Appl. Phys. , vol.97 , pp. 103531-103538
    • Gan, D.1    Ho, P.S.2    Huang, R.3    Leu, J.4    Maiz, J.5    Scherban, T.6
  • 43
    • 0023862519 scopus 로고
    • Fundamental questions in the theory of electromigration
    • Verbruggen A.H. Fundamental questions in the theory of electromigration. IBM J. Res. Dev. 32 (1988) 93-98
    • (1988) IBM J. Res. Dev. , vol.32 , pp. 93-98
    • Verbruggen, A.H.1
  • 44
    • 0001322541 scopus 로고
    • The driving force in electromigration
    • Lodder A. The driving force in electromigration. Physica A 158 (1989) 723-739
    • (1989) Physica A , vol.158 , pp. 723-739
    • Lodder, A.1
  • 46
    • 6144248888 scopus 로고
    • Sur l'electrolyse des alliages metalliques
    • Bosvieux C., and Friedel J. Sur l'electrolyse des alliages metalliques. J. Phys. Chem. Solids 23 (1962) 123
    • (1962) J. Phys. Chem. Solids , vol.23 , pp. 123
    • Bosvieux, C.1    Friedel, J.2
  • 47
    • 0002132804 scopus 로고
    • Linear response theory of the driving forces for electromigration
    • Kumar P., and Sorbello R.S. Linear response theory of the driving forces for electromigration. Thin Solid Films 25 (1975) 25
    • (1975) Thin Solid Films , vol.25 , pp. 25
    • Kumar, P.1    Sorbello, R.S.2
  • 48
    • 0001216520 scopus 로고
    • Microscopic theory of the driving force in electromigration
    • Sham L.J. Microscopic theory of the driving force in electromigration. Phys. Rev. B 12 (1975) 3142-3149
    • (1975) Phys. Rev. B , vol.12 , pp. 3142-3149
    • Sham, L.J.1
  • 49
    • 0000732147 scopus 로고
    • Theory of driving force for electromigration
    • Schaich W.L. Theory of driving force for electromigration. Phys. Rev. B 13 (1976) 3350-3359
    • (1976) Phys. Rev. B , vol.13 , pp. 3350-3359
    • Schaich, W.L.1
  • 50
    • 0001446856 scopus 로고
    • A pseudopotential based theory of the driving forces for electromigration in metals
    • Sorbello R.S. A pseudopotential based theory of the driving forces for electromigration in metals. J. Phys. Chem. Solids 34 (1973) 937-950
    • (1973) J. Phys. Chem. Solids , vol.34 , pp. 937-950
    • Sorbello, R.S.1
  • 51
    • 26544466417 scopus 로고
    • Transport in nearly-free-electron metals. IV. Electromigration in zinc
    • Genoni T.C., and Huntington H.B. Transport in nearly-free-electron metals. IV. Electromigration in zinc. Phys. Rev. B 16 (1977) 1344-1352
    • (1977) Phys. Rev. B , vol.16 , pp. 1344-1352
    • Genoni, T.C.1    Huntington, H.B.2
  • 52
    • 0001188448 scopus 로고
    • Theory of electromigration in noble and transition metals
    • Gupta R.P. Theory of electromigration in noble and transition metals. Phys. Rev. B 25 (1982) 5188-5196
    • (1982) Phys. Rev. B , vol.25 , pp. 5188-5196
    • Gupta, R.P.1
  • 53
    • 26144462524 scopus 로고
    • Calculation of the effective valance for electromigration in niobium
    • Gupta R.P., Serruys Y., Brebec G., and Adda Y. Calculation of the effective valance for electromigration in niobium. Phys. Rev. B 27 (1983) 672-677
    • (1983) Phys. Rev. B , vol.27 , pp. 672-677
    • Gupta, R.P.1    Serruys, Y.2    Brebec, G.3    Adda, Y.4
  • 54
    • 0022540580 scopus 로고
    • Electromigration in niobium. A finite-cluster-model study
    • Brand M.G.E., and Lodder A. Electromigration in niobium. A finite-cluster-model study. Phys. Stat. Solidi (b) 133 (1986) 119-125
    • (1986) Phys. Stat. Solidi (b) , vol.133 , pp. 119-125
    • Brand, M.G.E.1    Lodder, A.2
  • 55
    • 0006067782 scopus 로고
    • Electromigration in transition-metal hydrides: a finite-cluster-model study
    • Lodder A., and Brand M.G.E. Electromigration in transition-metal hydrides: a finite-cluster-model study. J. Phys. F: Met. Phys. 14 (1984) 2955-2962
    • (1984) J. Phys. F: Met. Phys. , vol.14 , pp. 2955-2962
    • Lodder, A.1    Brand, M.G.E.2
  • 56
    • 0000758996 scopus 로고
    • Driving force in electromigration
    • Landauer R., and Woo J.W.F. Driving force in electromigration. Phys. Rev. B 10 (1974) 1266-1271
    • (1974) Phys. Rev. B , vol.10 , pp. 1266-1271
    • Landauer, R.1    Woo, J.W.F.2
  • 57
    • 0000952126 scopus 로고
    • Residual-resistivity dipole in electron transport and electromigration
    • Sorbello R.S. Residual-resistivity dipole in electron transport and electromigration. Phys. Rev. B 23 (1981) 5119-5127
    • (1981) Phys. Rev. B , vol.23 , pp. 5119-5127
    • Sorbello, R.S.1
  • 58
    • 34648862026 scopus 로고
    • Sources of conduction band polarization in the driving force for electromigration
    • Landauer R. Sources of conduction band polarization in the driving force for electromigration. Thin Solid Films 26 (1975) L1-L2
    • (1975) Thin Solid Films , vol.26
    • Landauer, R.1
  • 59
    • 0037697328 scopus 로고
    • Local fields in electron transport: Application to electromigration
    • Sorbello R.S., and Dasgupta B. Local fields in electron transport: Application to electromigration. Phys. Rev. B 16 (1977) 5193-5205
    • (1977) Phys. Rev. B , vol.16 , pp. 5193-5205
    • Sorbello, R.S.1    Dasgupta, B.2
  • 61
  • 62
    • 0038373415 scopus 로고
    • Geometry and boundary conditions in the Das-Peierls electromigration theorem
    • Laundauer R. Geometry and boundary conditions in the Das-Peierls electromigration theorem. Phys. Rev. B 16 (1977) 4698-4702
    • (1977) Phys. Rev. B , vol.16 , pp. 4698-4702
    • Laundauer, R.1
  • 63
    • 0016473653 scopus 로고
    • Electromigration in thin gold films on molybdenum surfaces
    • Blech I.A., and Kinsbron E. Electromigration in thin gold films on molybdenum surfaces. Thin Solid Films 25 (1975) 327-334
    • (1975) Thin Solid Films , vol.25 , pp. 327-334
    • Blech, I.A.1    Kinsbron, E.2
  • 64
    • 21544441552 scopus 로고
    • Electromigration in thin Al films
    • Blech I.A., and Meieran E.S. Electromigration in thin Al films. J. Appl. Phys. 40 (1969) 485
    • (1969) J. Appl. Phys. , vol.40 , pp. 485
    • Blech, I.A.1    Meieran, E.S.2
  • 65
    • 34648865084 scopus 로고
    • Electromigration in thin Al films
    • Blech I.A., and Meieran E.S. Electromigration in thin Al films. J. Appl. Phys. 43 (1972) 762
    • (1972) J. Appl. Phys. , vol.43 , pp. 762
    • Blech, I.A.1    Meieran, E.S.2
  • 66
    • 0015434133 scopus 로고
    • Quantitative measurements of the mass distribution in thin films during electrotransport experiments
    • Weise J. Quantitative measurements of the mass distribution in thin films during electrotransport experiments. Thin Solid Films 13 (1972) 169-174
    • (1972) Thin Solid Films , vol.13 , pp. 169-174
    • Weise, J.1
  • 67
    • 0000697090 scopus 로고
    • A model for conductor failure considering diffusion concurrently with electromigration resulting in a current exponent of 2
    • Shatzkes M., and Lloyd J.R. A model for conductor failure considering diffusion concurrently with electromigration resulting in a current exponent of 2. J. Appl. Phys. 59 (1986) 3890-3893
    • (1986) J. Appl. Phys. , vol.59 , pp. 3890-3893
    • Shatzkes, M.1    Lloyd, J.R.2
  • 68
    • 36449003103 scopus 로고
    • Numerical investigations of the electromigration boundary value problem
    • Clement J.J., and Lloyd J.R. Numerical investigations of the electromigration boundary value problem. J. Appl. Phys. 71 (1992) 1729-1731
    • (1992) J. Appl. Phys. , vol.71 , pp. 1729-1731
    • Clement, J.J.1    Lloyd, J.R.2
  • 69
    • 0003354983 scopus 로고
    • Atomistic and computer modelling of metallizatioin failure of integrated circuits by electromigration
    • Kircheim R., and Kaeber U. Atomistic and computer modelling of metallizatioin failure of integrated circuits by electromigration. J. Appl. Phys. 70 (1991) 172-181
    • (1991) J. Appl. Phys. , vol.70 , pp. 172-181
    • Kircheim, R.1    Kaeber, U.2
  • 70
    • 0001467312 scopus 로고
    • Théorie Phénoménologique De L'effet Soret
    • DeGroot S.R. Théorie Phénoménologique De L'effet Soret. Physica 9 (1942) 699-708
    • (1942) Physica , vol.9 , pp. 699-708
    • DeGroot, S.R.1
  • 71
    • 33748088166 scopus 로고    scopus 로고
    • Experimental investigation on the impact of stress free temperature on the electromigration performance of copper dual damascene submicron interconnect
    • Roy A., and Tan C.M. Experimental investigation on the impact of stress free temperature on the electromigration performance of copper dual damascene submicron interconnect. Microelectron. Reliab. 46 (2006) 1652-1656
    • (2006) Microelectron. Reliab. , vol.46 , pp. 1652-1656
    • Roy, A.1    Tan, C.M.2
  • 72
    • 0024123630 scopus 로고
    • A simulation model for electromigration in fine-line metallization of integrated circuits due to repetitive pulse currents
    • Harrison J.W. A simulation model for electromigration in fine-line metallization of integrated circuits due to repetitive pulse currents. IEEE Trans. Electron Devices ED-35 (1988) 2170-2179
    • (1988) IEEE Trans. Electron Devices ED-35 , pp. 2170-2179
    • Harrison, J.W.1
  • 73
    • 0015206803 scopus 로고
    • Void formation and growth during electromigration in thin films
    • Rosenberg R., and Ohring M. Void formation and growth during electromigration in thin films. J. Appl. Phys. 42 (1971) 5671-5679
    • (1971) J. Appl. Phys. , vol.42 , pp. 5671-5679
    • Rosenberg, R.1    Ohring, M.2
  • 74
    • 0015142191 scopus 로고
    • Statistical metallurgical model for electromigration failure in aluminum thin-film conductors
    • Attardo M.J., Rutledge R., and Jack R.C. Statistical metallurgical model for electromigration failure in aluminum thin-film conductors. J. Appl. Phys. 42 (1971) 4343-4349
    • (1971) J. Appl. Phys. , vol.42 , pp. 4343-4349
    • Attardo, M.J.1    Rutledge, R.2    Jack, R.C.3
  • 75
    • 0018812353 scopus 로고
    • Monte Carlo calculations of structure-induced electromigration failure
    • Schoen J.M. Monte Carlo calculations of structure-induced electromigration failure. J. Appl. Phys. 51 (1980) 513-521
    • (1980) J. Appl. Phys. , vol.51 , pp. 513-521
    • Schoen, J.M.1
  • 76
    • 0019660825 scopus 로고
    • Monte Carlo calculations based on the generalized electromigration failure model
    • Nikawa K. Monte Carlo calculations based on the generalized electromigration failure model. Proceedings of the IRPS, IEEE (1981) 175-181
    • (1981) Proceedings of the IRPS, IEEE , pp. 175-181
    • Nikawa, K.1
  • 77
    • 0024680091 scopus 로고    scopus 로고
    • P.J. Marcoux, P.P. Merchant, V. Naroditsky, W.D. Rehder, A new 2D simulation model of. Electromigration, Hewlett-Packard J. June (1989) 79-84.
  • 78
    • 34648839417 scopus 로고    scopus 로고
    • F.M. d'Heurle, Rosenberg, in: G. Hass, M.H. Francombe, R.W. Hoffman (Eds.), Physics of Thin Films, vol. 7, Academic Press, New York (1973) 257-310.
  • 81
    • 0020091284 scopus 로고
    • Simple estimation of electromigration failure in metallic thin films
    • Mogro-Campero A. Simple estimation of electromigration failure in metallic thin films. J. Appl. Phys. 53 (1982) 1224-1225
    • (1982) J. Appl. Phys. , vol.53 , pp. 1224-1225
    • Mogro-Campero, A.1
  • 82
    • 0000162640 scopus 로고
    • Activation energies for the different electromigration mechanisms in aluminum
    • Schreiber H.U. Activation energies for the different electromigration mechanisms in aluminum. Solid-State Electron. 24 (1981) 583-589
    • (1981) Solid-State Electron. , vol.24 , pp. 583-589
    • Schreiber, H.U.1
  • 83
    • 0000034975 scopus 로고    scopus 로고
    • Electromigration path in Cu thin-film lines
    • Hu C.-K., Rosenberg R., and Lee K.Y. Electromigration path in Cu thin-film lines. Appl. Phys. Lett. 74 (1999) 2945-2947
    • (1999) Appl. Phys. Lett. , vol.74 , pp. 2945-2947
    • Hu, C.-K.1    Rosenberg, R.2    Lee, K.Y.3
  • 84
  • 87
    • 34648871224 scopus 로고
    • Blakly J.M. (Ed), Academic Press, New York (Chapter 6)
    • Bonzel H.P. In: Blakly J.M. (Ed). Surface Physics of Materials vol. II (1975), Academic Press, New York (Chapter 6)
    • (1975) Surface Physics of Materials , vol.II
    • Bonzel, H.P.1
  • 88
    • 0042429808 scopus 로고
    • The surface self-diffusion of copper as affected by environment
    • Bradshaw F.J., Brandon R.H., and Wheeler C. The surface self-diffusion of copper as affected by environment. Acta Metall. 12 (1964) 1057-1063
    • (1964) Acta Metall. , vol.12 , pp. 1057-1063
    • Bradshaw, F.J.1    Brandon, R.H.2    Wheeler, C.3
  • 89
    • 0000423545 scopus 로고
    • Grain-boundary diffusion and segregation of gold in copper: investigation in the type-B and type-C kinetic regimes
    • Surholt T., Mishin Y.M., and Hertzig C. Grain-boundary diffusion and segregation of gold in copper: investigation in the type-B and type-C kinetic regimes. Phys. Rev. B 50 (1994) 3577
    • (1994) Phys. Rev. B , vol.50 , pp. 3577
    • Surholt, T.1    Mishin, Y.M.2    Hertzig, C.3
  • 90
    • 0030379337 scopus 로고    scopus 로고
    • Electromigration drift and threshold in Cu thin-film interconnects
    • Frankovic R., and Berstein G.H. Electromigration drift and threshold in Cu thin-film interconnects. IEEE Trans. Electron Devices 43 (1996) 2233-2239
    • (1996) IEEE Trans. Electron Devices , vol.43 , pp. 2233-2239
    • Frankovic, R.1    Berstein, G.H.2
  • 91
    • 0037252548 scopus 로고    scopus 로고
    • Evidence of grain-boundary versus interface diffusion in electromigration experiments in copper damascene interconnects
    • Arnaud L., Berger T., and Reimbold G. Evidence of grain-boundary versus interface diffusion in electromigration experiments in copper damascene interconnects. J. Appl. Phys. 93 (2003) 192-204
    • (2003) J. Appl. Phys. , vol.93 , pp. 192-204
    • Arnaud, L.1    Berger, T.2    Reimbold, G.3
  • 92
    • 0001438054 scopus 로고    scopus 로고
    • On the unusual electromigration behavior of copper interconnects
    • Glicman E., and Nathan M. On the unusual electromigration behavior of copper interconnects. J. Appl. Phys. 80 (1996) 3782-3791
    • (1996) J. Appl. Phys. , vol.80 , pp. 3782-3791
    • Glicman, E.1    Nathan, M.2
  • 94
    • 33644906605 scopus 로고    scopus 로고
    • Investigation of the effect of temperature and stress gradients on accelerated EM test for Cu narrow interconnects
    • Tan C.M., and Roy A. Investigation of the effect of temperature and stress gradients on accelerated EM test for Cu narrow interconnects. Thin Solid Films 504 (2006) 288-293
    • (2006) Thin Solid Films , vol.504 , pp. 288-293
    • Tan, C.M.1    Roy, A.2
  • 95
    • 34648853799 scopus 로고    scopus 로고
    • A. Roy. PhD dissertation, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 2007, submitted.
  • 96
    • 0005376829 scopus 로고
    • Stress-migration related electromigration damage mechanism in passivated, narrow interconnects
    • Li C.-Y., Børgesen P., and Sullivan T.D. Stress-migration related electromigration damage mechanism in passivated, narrow interconnects. Appl. Phys. Lett. 59 (1991) 1464-1466
    • (1991) Appl. Phys. Lett. , vol.59 , pp. 1464-1466
    • Li, C.-Y.1    Børgesen, P.2    Sullivan, T.D.3
  • 97
    • 0026944502 scopus 로고
    • Stress and current induced voiding in passivated metal lines
    • Børgesen P., Korhonen M.A., and Li C.-Y. Stress and current induced voiding in passivated metal lines. Thin Solid Films 220 (1992) 8-13
    • (1992) Thin Solid Films , vol.220 , pp. 8-13
    • Børgesen, P.1    Korhonen, M.A.2    Li, C.-Y.3
  • 98
    • 0000541904 scopus 로고    scopus 로고
    • Electromigration in thin film conductors
    • Lolyd J.R. Electromigration in thin film conductors. Semicond. Sci. Technol. 12 (1997) 1177-1185
    • (1997) Semicond. Sci. Technol. , vol.12 , pp. 1177-1185
    • Lolyd, J.R.1
  • 99
    • 0032668835 scopus 로고    scopus 로고
    • Electromigration in integrated circuit conductors
    • Lloyd J.R. Electromigration in integrated circuit conductors. J. Phys. D: Appl. Phys. 32 (1999) R109-R118
    • (1999) J. Phys. D: Appl. Phys. , vol.32
    • Lloyd, J.R.1
  • 100
    • 34648842606 scopus 로고
    • Diffusion of vacancies under stress a gradient
    • Williams R.O. Diffusion of vacancies under stress a gradient. Acta Metall. 5 (1957) 55-56
    • (1957) Acta Metall. , vol.5 , pp. 55-56
    • Williams, R.O.1
  • 101
    • 0038035318 scopus 로고
    • Stress evolution due to electromigration in confined metal lines
    • Korhonen M.A., Børgesen P., Tu K.N., and Li C.-Y. Stress evolution due to electromigration in confined metal lines. J. Appl. Phys. 73 (1993) 3790-3799
    • (1993) J. Appl. Phys. , vol.73 , pp. 3790-3799
    • Korhonen, M.A.1    Børgesen, P.2    Tu, K.N.3    Li, C.-Y.4
  • 102
    • 0011704584 scopus 로고    scopus 로고
    • Electromigration drift velocity in Cu interconnects modeled with the level set method
    • Nathan M., Glickman E., Khenner M., Averbuch A., and Israeli M. Electromigration drift velocity in Cu interconnects modeled with the level set method. Appl. Phys. Lett. 77 (2000) 3355-3357
    • (2000) Appl. Phys. Lett. , vol.77 , pp. 3355-3357
    • Nathan, M.1    Glickman, E.2    Khenner, M.3    Averbuch, A.4    Israeli, M.5
  • 103
    • 0036642120 scopus 로고    scopus 로고
    • Electromigration in on-chip single/dual damascene Cu interconnects
    • Hu C.-K., Gignac L., Liniger E., and Rosenberg R. Electromigration in on-chip single/dual damascene Cu interconnects. J. Electrochem. Soc. 147 (2002) G408-G415
    • (2002) J. Electrochem. Soc. , vol.147
    • Hu, C.-K.1    Gignac, L.2    Liniger, E.3    Rosenberg, R.4
  • 104
    • 33746189599 scopus 로고    scopus 로고
    • A direct measurement of electromigration induced drift velocity in Cu dual damascene interconnects
    • Yan M.Y., Tu K.N., Vairagar A.V., Mhaisalkar S.G., and Krishnamoorthy A. A direct measurement of electromigration induced drift velocity in Cu dual damascene interconnects. Microelectron. Reliab. 46 (2006) 1392-1395
    • (2006) Microelectron. Reliab. , vol.46 , pp. 1392-1395
    • Yan, M.Y.1    Tu, K.N.2    Vairagar, A.V.3    Mhaisalkar, S.G.4    Krishnamoorthy, A.5
  • 106
    • 0033225102 scopus 로고    scopus 로고
    • Electromigration and mechanical stress
    • Lloyd J.R. Electromigration and mechanical stress. Microelectron. Eng. 49 (1999) 51-64
    • (1999) Microelectron. Eng. , vol.49 , pp. 51-64
    • Lloyd, J.R.1
  • 107
    • 0034256167 scopus 로고    scopus 로고
    • The effects of mechanical properties of the confinement of interconnect material on electromigration in metallic interconnects
    • Riege S.P.H., and Thompson C.V. The effects of mechanical properties of the confinement of interconnect material on electromigration in metallic interconnects. J. Mater. Res. 15 (2000) 1797-1802
    • (2000) J. Mater. Res. , vol.15 , pp. 1797-1802
    • Riege, S.P.H.1    Thompson, C.V.2
  • 108
    • 0141569935 scopus 로고    scopus 로고
    • Temperature-depedent inelastic response of passivated copper films: experiments analyses, and implications
    • Shen Y.-L., and Ramamurthy U. Temperature-depedent inelastic response of passivated copper films: experiments analyses, and implications. J. Vac. Sci. Technol. B 21 (2003) 1258-1264
    • (2003) J. Vac. Sci. Technol. B , vol.21 , pp. 1258-1264
    • Shen, Y.-L.1    Ramamurthy, U.2
  • 109
    • 0037390977 scopus 로고    scopus 로고
    • Thermal stress characteristics of Cu/oxide and Cu/low-K submicron structures
    • Rhee S.-H., Du Y., and Ho P.S. Thermal stress characteristics of Cu/oxide and Cu/low-K submicron structures. J. Appl. Phys. 93 (2003) 3926-3933
    • (2003) J. Appl. Phys. , vol.93 , pp. 3926-3933
    • Rhee, S.-H.1    Du, Y.2    Ho, P.S.3
  • 110
    • 0036927884 scopus 로고    scopus 로고
    • Mechanical stress measurement in damascene copper interconnects and influence on electromigration parameters
    • Reimbold G., Sicardy O., Arnaud L., Fillot F., and Torres J. Mechanical stress measurement in damascene copper interconnects and influence on electromigration parameters. Proceedings of the IEDM, IEEE (2002) 745-748
    • (2002) Proceedings of the IEDM, IEEE , pp. 745-748
    • Reimbold, G.1    Sicardy, O.2    Arnaud, L.3    Fillot, F.4    Torres, J.5
  • 111
    • 28744432066 scopus 로고    scopus 로고
    • Observation and restoration of negative electromigration activation energy behavior due to thermo-mechanical effects
    • Park Y.-J., Lee K.-D., and Hunter W.R. Observation and restoration of negative electromigration activation energy behavior due to thermo-mechanical effects. Proceedings of the IRPS, IEEE (2005) 18-23
    • (2005) Proceedings of the IRPS, IEEE , pp. 18-23
    • Park, Y.-J.1    Lee, K.-D.2    Hunter, W.R.3
  • 112
    • 0015639604 scopus 로고
    • Electromigration and metallization lifetimes
    • Sigsbee R.A. Electromigration and metallization lifetimes. J. Appl. Phys. 44 (1973) 2533-2540
    • (1973) J. Appl. Phys. , vol.44 , pp. 2533-2540
    • Sigsbee, R.A.1
  • 114
    • 0022121760 scopus 로고
    • Measurement of thermomigration in thin metal films
    • Grup G.J.V., and Chatenier F.J.D. Measurement of thermomigration in thin metal films. Thin Solid Films 131 (1985) 155-162
    • (1985) Thin Solid Films , vol.131 , pp. 155-162
    • Grup, G.J.V.1    Chatenier, F.J.D.2
  • 115
    • 1842617942 scopus 로고
    • Electromigration in metals
    • Ho P.S., and Kwok T. Electromigration in metals. Rep. Prog. Phys. 52 (1989) 301-348
    • (1989) Rep. Prog. Phys. , vol.52 , pp. 301-348
    • Ho, P.S.1    Kwok, T.2
  • 116
    • 36849109026 scopus 로고
    • Direct transmission electron microscope observations of electrotransport in aluminum films
    • Blech I.A., and Meieran E.S. Direct transmission electron microscope observations of electrotransport in aluminum films. Appl. Phys. Lett. 11 (1967) 263-266
    • (1967) Appl. Phys. Lett. , vol.11 , pp. 263-266
    • Blech, I.A.1    Meieran, E.S.2
  • 117
    • 0023849056 scopus 로고
    • Kinetic study of electromigration failure in Cr/Al-Cu thin film conductors covered with polyimide and the problem of the stress dependent activation energy
    • Lloyd J.R., Shatzkes M., and Challaner D.C. Kinetic study of electromigration failure in Cr/Al-Cu thin film conductors covered with polyimide and the problem of the stress dependent activation energy. Proceedings of the IRPS, IEEE (1988) 216-225
    • (1988) Proceedings of the IRPS, IEEE , pp. 216-225
    • Lloyd, J.R.1    Shatzkes, M.2    Challaner, D.C.3
  • 118
    • 51249172628 scopus 로고
    • Electromigration in the presence of a temperature gradient: experimental study and modeling
    • Schwarzenberger A.P., Ross C.A., Evetts J.E., and Greer A.L. Electromigration in the presence of a temperature gradient: experimental study and modeling. J. Electron. Mater. 17 (1988) 473-478
    • (1988) J. Electron. Mater. , vol.17 , pp. 473-478
    • Schwarzenberger, A.P.1    Ross, C.A.2    Evetts, J.E.3    Greer, A.L.4
  • 121
    • 0033282883 scopus 로고    scopus 로고
    • Temperature gradient effects in electromigration using an extended transition probability model and temperature gradient free tests. I. Transition probability model
    • Jonggook K., Tyree V.C., and Crowell C.R. Temperature gradient effects in electromigration using an extended transition probability model and temperature gradient free tests. I. Transition probability model. Proceedings of the IRW Final Report, IEEE (1999) 24-40
    • (1999) Proceedings of the IRW Final Report, IEEE , pp. 24-40
    • Jonggook, K.1    Tyree, V.C.2    Crowell, C.R.3
  • 122
    • 84932102583 scopus 로고    scopus 로고
    • Effect of thermal gradients on the electromigration lifetime in power electronics
    • Nguyen H.V., et al. Effect of thermal gradients on the electromigration lifetime in power electronics. Proceedings of the IRPS, IEEE (2004) 619-620
    • (2004) Proceedings of the IRPS, IEEE , pp. 619-620
    • Nguyen, H.V.1
  • 123
    • 0034315310 scopus 로고    scopus 로고
    • Thermomigration as a driving force for instability of electromigration induced mass transport in interconnect lines
    • Ru C.Q. Thermomigration as a driving force for instability of electromigration induced mass transport in interconnect lines. J. Mater. Sci. 35 (2000) 5575-5579
    • (2000) J. Mater. Sci. , vol.35 , pp. 5575-5579
    • Ru, C.Q.1
  • 124
    • 1242329852 scopus 로고    scopus 로고
    • Impact of current crowding on the electromigration-induced mass transport
    • Wang H., Bruynseraede C., and Maex K. Impact of current crowding on the electromigration-induced mass transport. Appl. Phys. Lett. 84 (2004) 517-519
    • (2004) Appl. Phys. Lett. , vol.84 , pp. 517-519
    • Wang, H.1    Bruynseraede, C.2    Maex, K.3
  • 125
    • 0000362877 scopus 로고    scopus 로고
    • A simulation of electromigration-induced transgranular slits
    • Wang W., Suo Z., and Hao T.-H. A simulation of electromigration-induced transgranular slits. J. Appl. Phys. 79 (1996) 2394-2403
    • (1996) J. Appl. Phys. , vol.79 , pp. 2394-2403
    • Wang, W.1    Suo, Z.2    Hao, T.-H.3
  • 126
    • 11144245530 scopus 로고    scopus 로고
    • Dynamic study of the physical processes in the intrinsic line electromigration deep submicron copper and aluminum interconnects
    • Tan C.M., Zhang G., and Gan Z.H. Dynamic study of the physical processes in the intrinsic line electromigration deep submicron copper and aluminum interconnects. IEEE Tans. Device Mater. Reliab. 4 (2004) 450-456
    • (2004) IEEE Tans. Device Mater. Reliab. , vol.4 , pp. 450-456
    • Tan, C.M.1    Zhang, G.2    Gan, Z.H.3
  • 127
    • 0028491015 scopus 로고
    • Electromigration failure by shape change of voids in bamboo lines
    • Arzt E., Kraft O., Nix W.D., and Sanchez J.E. Electromigration failure by shape change of voids in bamboo lines. J. Appl. Phys. 76 (1994) 1563-1571
    • (1994) J. Appl. Phys. , vol.76 , pp. 1563-1571
    • Arzt, E.1    Kraft, O.2    Nix, W.D.3    Sanchez, J.E.4
  • 128
    • 0031117638 scopus 로고    scopus 로고
    • Electromigration mechanisms in conductor lines: void shape changes and slit-like failure
    • Kraft O., and Arzt E. Electromigration mechanisms in conductor lines: void shape changes and slit-like failure. Acta Mater. 45 (1997) 1599-1611
    • (1997) Acta Mater. , vol.45 , pp. 1599-1611
    • Kraft, O.1    Arzt, E.2
  • 129
    • 0018440402 scopus 로고
    • Non-equalibrium models for diffusive cavitation of grain interfaces
    • Chuang T.J., Kagawa K.I., Rice J.R., and Sills L.B. Non-equalibrium models for diffusive cavitation of grain interfaces. Acta Metall. 27 (1979) 265-284
    • (1979) Acta Metall. , vol.27 , pp. 265-284
    • Chuang, T.J.1    Kagawa, K.I.2    Rice, J.R.3    Sills, L.B.4
  • 130
    • 0020099241 scopus 로고
    • Numerical study of cavity growth controlled by coupled surface grain boundary diffusion
    • Martinez L., and Mix W.D. Numerical study of cavity growth controlled by coupled surface grain boundary diffusion. Metal. Trans. A (Phys. Metal. Mater. Sci.) 13A (1982) 427-437
    • (1982) Metal. Trans. A (Phys. Metal. Mater. Sci.) , vol.13 A , pp. 427-437
    • Martinez, L.1    Mix, W.D.2
  • 131
    • 33846994074 scopus 로고    scopus 로고
    • Probing into the asymmetric nature of electromigration performance of submicron interconnect via structure
    • Roy A., and Tan C.M. Probing into the asymmetric nature of electromigration performance of submicron interconnect via structure. Thin Solid Films 515 (2007) 3867-3874
    • (2007) Thin Solid Films , vol.515 , pp. 3867-3874
    • Roy, A.1    Tan, C.M.2
  • 132
    • 24144454672 scopus 로고    scopus 로고
    • Effect of test condition and stress free temperature on the electromigration failure of Cu dual damascene submicron interconnect line-via test structure
    • Roy A., Tan C.M., Kumar R., and Chen X.T. Effect of test condition and stress free temperature on the electromigration failure of Cu dual damascene submicron interconnect line-via test structure. Microelectron. Reliab. 45 (2005) 1443-1448
    • (2005) Microelectron. Reliab. , vol.45 , pp. 1443-1448
    • Roy, A.1    Tan, C.M.2    Kumar, R.3    Chen, X.T.4
  • 133
    • 4344564969 scopus 로고    scopus 로고
    • Overcoming intrinsic weakness of ULSI metallization electromigration performances
    • Tan C.M., and Zhang G. Overcoming intrinsic weakness of ULSI metallization electromigration performances. Thin Solid Films 462-463 (2004) 263-268
    • (2004) Thin Solid Films , vol.462-463 , pp. 263-268
    • Tan, C.M.1    Zhang, G.2
  • 135
    • 33747307274 scopus 로고    scopus 로고
    • Electromigration in damascene copper interconnects of line width down to 100 nm
    • Roy A., Kumar R., Tan C.M., Wong T.K.S., and Tung C.-H. Electromigration in damascene copper interconnects of line width down to 100 nm. Semicond. Sci. Technol. 21 (2006) 1369-1372
    • (2006) Semicond. Sci. Technol. , vol.21 , pp. 1369-1372
    • Roy, A.1    Kumar, R.2    Tan, C.M.3    Wong, T.K.S.4    Tung, C.-H.5
  • 136
    • 0035456975 scopus 로고    scopus 로고
    • Three-dimensional voids simulation in chip metallization structures: a contribution to reliability evaluation
    • Dalleau D., and Zaage K.W. Three-dimensional voids simulation in chip metallization structures: a contribution to reliability evaluation. Microelectron. Reliab. 41 (2001) 1625-1630
    • (2001) Microelectron. Reliab. , vol.41 , pp. 1625-1630
    • Dalleau, D.1    Zaage, K.W.2
  • 137
    • 33751236500 scopus 로고    scopus 로고
    • Simulation of microstructure influence on EM-induced degradation in Cu interconnects
    • Zschech E., Maex K., Ho P.S., Kawasaki H., and Nakamura T. (Eds)
    • Sukharev V. Simulation of microstructure influence on EM-induced degradation in Cu interconnects. In: Zschech E., Maex K., Ho P.S., Kawasaki H., and Nakamura T. (Eds). Proceedings of the International Workshop on Stress-Induced Phenomena in Metallization, AIP, vol. 817 (2006) 244-253
    • (2006) Proceedings of the International Workshop on Stress-Induced Phenomena in Metallization, AIP, vol. 817 , pp. 244-253
    • Sukharev, V.1
  • 139
    • 21344474097 scopus 로고    scopus 로고
    • A model for electromigration-induced degradation mechanisms in dual-inlaid copper interconnects: effect of interface bonding strength
    • Sukharev V., and Zschech E. A model for electromigration-induced degradation mechanisms in dual-inlaid copper interconnects: effect of interface bonding strength. J. Appl. Phys. 96 (2004) 6337-6343
    • (2004) J. Appl. Phys. , vol.96 , pp. 6337-6343
    • Sukharev, V.1    Zschech, E.2
  • 141
    • 34648860049 scopus 로고    scopus 로고
    • A. Roy, C.M. Tan, Electromigration degradation of submicron copper dual damascene interconnects, Microelectron. Reliab., submitted.
  • 142
    • 0342515514 scopus 로고
    • A Monte Carlo computer simulation of electromigration
    • Smy T.J., Winterton S.S., and Brett M.J. A Monte Carlo computer simulation of electromigration. J. Appl. Phys. 73 (1993) 2821-2825
    • (1993) J. Appl. Phys. , vol.73 , pp. 2821-2825
    • Smy, T.J.1    Winterton, S.S.2    Brett, M.J.3
  • 143
    • 0347874105 scopus 로고    scopus 로고
    • Three-dimentional Monte Carlo simulations of electromigration in polycrystalline thin films
    • Bruschi P., Nannini A., and Piotto M. Three-dimentional Monte Carlo simulations of electromigration in polycrystalline thin films. Comput. Mater. Sci. 17 (2000) 299-304
    • (2000) Comput. Mater. Sci. , vol.17 , pp. 299-304
    • Bruschi, P.1    Nannini, A.2    Piotto, M.3
  • 144
    • 28644443585 scopus 로고    scopus 로고
    • Three-dimensional simulation of void migration at the interface between thin metallic film and dielectric under electromigration
    • Zaporozhets T.V., Gusak A.M., Tu K.N., and Mhaisalkar S.G. Three-dimensional simulation of void migration at the interface between thin metallic film and dielectric under electromigration. J. Appl. Phys. 98 (2005) 103508-103518
    • (2005) J. Appl. Phys. , vol.98 , pp. 103508-103518
    • Zaporozhets, T.V.1    Gusak, A.M.2    Tu, K.N.3    Mhaisalkar, S.G.4
  • 145
    • 34249887657 scopus 로고    scopus 로고
    • Dynamic simulation of electromigration in polycrystalline interconnect thin film using combined Monte Carlo algorithm and finite element modeling
    • Li W., Tan C.M., and Hou Y. Dynamic simulation of electromigration in polycrystalline interconnect thin film using combined Monte Carlo algorithm and finite element modeling. J. Appl. Phys. 101 (2007) 104314
    • (2007) J. Appl. Phys. , vol.101 , pp. 104314
    • Li, W.1    Tan, C.M.2    Hou, Y.3
  • 146
    • 0025227571 scopus 로고
    • Evaluating voids and microcracks in aluminum metallization
    • Smith W.L., Welles C.G., and Bivas A. Evaluating voids and microcracks in aluminum metallization. Semicond. Int. 13 1 (1990) 92
    • (1990) Semicond. Int. , vol.13 , Issue.1 , pp. 92
    • Smith, W.L.1    Welles, C.G.2    Bivas, A.3
  • 147
    • 0000222736 scopus 로고    scopus 로고
    • Temperature dependence of electromigration dynamics in Al interconnects by real-time microscopy
    • Prybyla J.A., Riege S.P., Grabowski S.P., and Hunt A.W. Temperature dependence of electromigration dynamics in Al interconnects by real-time microscopy. Appl. Phys. Lett. 73 (1998) 1083-1085
    • (1998) Appl. Phys. Lett. , vol.73 , pp. 1083-1085
    • Prybyla, J.A.1    Riege, S.P.2    Grabowski, S.P.3    Hunt, A.W.4
  • 148
    • 34648871213 scopus 로고    scopus 로고
    • T.R. Kuphaldt, See Chapter 8, Lessons in Electric Circuits, Volume I-DC. Available at http://www.allaboutcircuits.com/vol_1/chpt_8/index.html.
  • 150
    • 0023312194 scopus 로고
    • Thermal analysis of electromigration test structures
    • Schafft H.A. Thermal analysis of electromigration test structures. IEEE Trans. Electron Devices ED-34 (1987) 664-672
    • (1987) IEEE Trans. Electron Devices ED-34 , pp. 664-672
    • Schafft, H.A.1
  • 151
    • 34648850695 scopus 로고    scopus 로고
    • ASTM Standard Guide for Design of Flat, Straight-Line Test Structures for Detecting Metallization Open-Circuit or Resistance-Increase Failure Due to Electromigration, F 1259-89, Annual Book of ASTM Standards, vol. 10.04.
  • 152
    • 34648871211 scopus 로고    scopus 로고
    • ASTM Standard Test Method for Determining the Average Width and Cross-Sectional Area of a Straight, Thin-Film Metal Line, F 1261-89, Annual Book of ASTM Standards, vol. 10.04.
  • 153
    • 0022246522 scopus 로고
    • Wafer-level electromigration tests for production monitoring
    • Root B.J., and Turner T. Wafer-level electromigration tests for production monitoring. Proceedings of the IRPS, IEEE (1985) 100-107
    • (1985) Proceedings of the IRPS, IEEE , pp. 100-107
    • Root, B.J.1    Turner, T.2
  • 155
    • 0026139376 scopus 로고
    • SWEAT structure design and test procedure criteria based upon TEARS characterization and spatial distribution of failures in iterated structures
    • Crowell C.R., Shih C.-C., and Tyree V.C. SWEAT structure design and test procedure criteria based upon TEARS characterization and spatial distribution of failures in iterated structures. Proceedings of the IRPS, IEEE (1991) 277-286
    • (1991) Proceedings of the IRPS, IEEE , pp. 277-286
    • Crowell, C.R.1    Shih, C.-C.2    Tyree, V.C.3
  • 156
    • 0035981074 scopus 로고    scopus 로고
    • Effect of current direction on the lifetime of different levels of Cu dual-damascene metallization
    • Gan C.L., Thompson C.V., Pey K.L., Choi W.K., Tay H.L., Yu B., and Radhakrishnan M.K. Effect of current direction on the lifetime of different levels of Cu dual-damascene metallization. Appl. Phys. Lett. 79 (2001) 4592-4594
    • (2001) Appl. Phys. Lett. , vol.79 , pp. 4592-4594
    • Gan, C.L.1    Thompson, C.V.2    Pey, K.L.3    Choi, W.K.4    Tay, H.L.5    Yu, B.6    Radhakrishnan, M.K.7
  • 157
    • 1242310324 scopus 로고    scopus 로고
    • Effect of underlayer dielectric on the thermal characteristics and electromigration resistance of copper interconnect
    • (part 1, no 12)
    • Chin Y.-L., and Chiou B.-S. Effect of underlayer dielectric on the thermal characteristics and electromigration resistance of copper interconnect. Jpn. J. Appl. Phys. 42 (2003) 7502-7509 (part 1, no 12)
    • (2003) Jpn. J. Appl. Phys. , vol.42 , pp. 7502-7509
    • Chin, Y.-L.1    Chiou, B.-S.2
  • 158
    • 0035128951 scopus 로고    scopus 로고
    • Improved estimation of the resistivity of pure and electrical determination of thin copper film dimensions
    • Schuster C.E., Vangel M.G., and Schafft H.A. Improved estimation of the resistivity of pure and electrical determination of thin copper film dimensions. Microelectron. Reliab. 41 (2001) 239-252
    • (2001) Microelectron. Reliab. , vol.41 , pp. 239-252
    • Schuster, C.E.1    Vangel, M.G.2    Schafft, H.A.3
  • 159
    • 0000204618 scopus 로고
    • Resistance monitoring and effects of nonadhesion during electromigration in aluminum films
    • Rosenberg R., and Berenbaum L. Resistance monitoring and effects of nonadhesion during electromigration in aluminum films. Appl. Phys. Lett. 12 (1968) 201-204
    • (1968) Appl. Phys. Lett. , vol.12 , pp. 201-204
    • Rosenberg, R.1    Berenbaum, L.2
  • 160
    • 0041674193 scopus 로고
    • Activation energy for electromigration in aluminum films alloyed with copper
    • Shine M.C., and d'Heurle F.M. Activation energy for electromigration in aluminum films alloyed with copper. IBM J. Res. Dev. 15 (1971) 378
    • (1971) IBM J. Res. Dev. , vol.15 , pp. 378
    • Shine, M.C.1    d'Heurle, F.M.2
  • 161
    • 0002645302 scopus 로고
    • Activation energy for electrotransport in thin aluminum films by resistance measurements
    • Hummel R.E., DeHoff R.T., and Geier H.J. Activation energy for electrotransport in thin aluminum films by resistance measurements. J. Phys. Chem. Solids 37 (1976) 73-80
    • (1976) J. Phys. Chem. Solids , vol.37 , pp. 73-80
    • Hummel, R.E.1    DeHoff, R.T.2    Geier, H.J.3
  • 162
    • 0020943291 scopus 로고
    • The application of a dynamic technique to the study of electromigration kinetics
    • Pasco R.W., and Schwarz J.A. The application of a dynamic technique to the study of electromigration kinetics. Proceedings of the IRPS, IEEE (1983) 10-23
    • (1983) Proceedings of the IRPS, IEEE , pp. 10-23
    • Pasco, R.W.1    Schwarz, J.A.2
  • 163
    • 0023855692 scopus 로고
    • A resistance change methodology for the study of electromigration in Al-Si interconnects
    • April 12-14
    • Maiz J.A., and Segura I. A resistance change methodology for the study of electromigration in Al-Si interconnects. Proceedings of the IRPS, IEEE. April 12-14 (1988) 209-215
    • (1988) Proceedings of the IRPS, IEEE , pp. 209-215
    • Maiz, J.A.1    Segura, I.2
  • 164
    • 0342637567 scopus 로고
    • Study of electromigration-induced resistance and resistance decay in Al thin-film conductors
    • Lloyd J.R., and Koch R.H. Study of electromigration-induced resistance and resistance decay in Al thin-film conductors. Appl. Phys. Lett. 52 (1988) 194-196
    • (1988) Appl. Phys. Lett. , vol.52 , pp. 194-196
    • Lloyd, J.R.1    Koch, R.H.2
  • 165
  • 166
    • 0026121723 scopus 로고
    • Interaction between electromigration and mechanical-stress-induced migration: new insights by a simple, wafer-level resistometric technique
    • Baldini G.L., and Scorzoni A. Interaction between electromigration and mechanical-stress-induced migration: new insights by a simple, wafer-level resistometric technique. IEEE Trans. Electron Devices 38 (1991) 469-475
    • (1991) IEEE Trans. Electron Devices , vol.38 , pp. 469-475
    • Baldini, G.L.1    Scorzoni, A.2
  • 169
    • 0344627186 scopus 로고
    • Correlation between resistance behavior and mass transport in Al-Si/Ti multilayer interconnects
    • Finetti M., Suni I., Armigliato A., Garulli A., and Scorzoni A. Correlation between resistance behavior and mass transport in Al-Si/Ti multilayer interconnects. J. Vac. Sci. Technol. A 5 (1987) 2854-2858
    • (1987) J. Vac. Sci. Technol. A , vol.5 , pp. 2854-2858
    • Finetti, M.1    Suni, I.2    Armigliato, A.3    Garulli, A.4    Scorzoni, A.5
  • 171
    • 0000984088 scopus 로고
    • Electromigration in thin-film interconnection lines: models, methods and results
    • Scorzoni A., Neri B., Caprile C., and Fantini F. Electromigration in thin-film interconnection lines: models, methods and results. Mater. Sci. Rep. 7 (1991) 143-220
    • (1991) Mater. Sci. Rep. , vol.7 , pp. 143-220
    • Scorzoni, A.1    Neri, B.2    Caprile, C.3    Fantini, F.4
  • 172
    • 0022101998 scopus 로고
    • Compensating effects in electromigration kinetics
    • Schwarz J.A., and Felton L.E. Compensating effects in electromigration kinetics. Solid State Electron. 28 (1985) 669-675
    • (1985) Solid State Electron. , vol.28 , pp. 669-675
    • Schwarz, J.A.1    Felton, L.E.2
  • 173
    • 0022223021 scopus 로고
    • Breakdown energy of metal (BEM)-a new technique for monitoring matallization reliability at waferlevel
    • March 26-28
    • Hong C.C., and Crook D.L. Breakdown energy of metal (BEM)-a new technique for monitoring matallization reliability at waferlevel. Proceedings of the IRPS, IEEE. March 26-28 (1985) 108-114
    • (1985) Proceedings of the IRPS, IEEE , pp. 108-114
    • Hong, C.C.1    Crook, D.L.2
  • 174
    • 84914308924 scopus 로고
    • Soncini G., and Calzolari P.U. (Eds), Amsterdam, North-Holland
    • Bacci L., Caprile C., and De Santi G. In: Soncini G., and Calzolari P.U. (Eds). Solid State Devices (1988), Amsterdam, North-Holland 373-376
    • (1988) Solid State Devices , pp. 373-376
    • Bacci, L.1    Caprile, C.2    De Santi, G.3
  • 175
    • 0022215816 scopus 로고
    • Passivation material. and thickness effects on the MTTF of Al-Si metallization
    • Yau L., Hong C., and Crook D. Passivation material. and thickness effects on the MTTF of Al-Si metallization. Proceedings of the IRPS, IEEE (1985) 115-118
    • (1985) Proceedings of the IRPS, IEEE , pp. 115-118
    • Yau, L.1    Hong, C.2    Crook, D.3
  • 176
    • 34648862025 scopus 로고    scopus 로고
    • A procedure for the 1971 SWEAT, JEP119, 1994.
  • 177
    • 0035244612 scopus 로고    scopus 로고
    • A reliability statistics perspective on the pitfalls of standard wafer-level electromigration accelerated test
    • Tan C.M., and Yeo K.N.C. A reliability statistics perspective on the pitfalls of standard wafer-level electromigration accelerated test. J. Electronic Testing 17 (2001) 63-68
    • (2001) J. Electronic Testing , vol.17 , pp. 63-68
    • Tan, C.M.1    Yeo, K.N.C.2
  • 178
    • 0001092204 scopus 로고
    • A new wafer-level isothermal Joule-heated electromigration test for rapid testing of integrated-circuit interconnect
    • Jones R.E., and Smith L.D. A new wafer-level isothermal Joule-heated electromigration test for rapid testing of integrated-circuit interconnect. J. Appl. Phys. 61 (1987) 4670-4678
    • (1987) J. Appl. Phys. , vol.61 , pp. 4670-4678
    • Jones, R.E.1    Smith, L.D.2
  • 181
    • 0034427769 scopus 로고    scopus 로고
    • Basic BEOL parameters from isothermal wafer level electromigration testing
    • Sullivan T.D., Lee T., and Tibel D. Basic BEOL parameters from isothermal wafer level electromigration testing. Proceedings of the IRW, IEEE (2000) 80-84
    • (2000) Proceedings of the IRW, IEEE , pp. 80-84
    • Sullivan, T.D.1    Lee, T.2    Tibel, D.3
  • 182
    • 0004954250 scopus 로고    scopus 로고
    • Wafer-level electromigration reliability test for deep-submicron interconnect metallization
    • August 29
    • Loh W.B., Tse M.S., Chan L., and Lo K.F. Wafer-level electromigration reliability test for deep-submicron interconnect metallization. Proceedings of the IEDM, IEEE. August 29 (1998) 157-160
    • (1998) Proceedings of the IEDM, IEEE , pp. 157-160
    • Loh, W.B.1    Tse, M.S.2    Chan, L.3    Lo, K.F.4
  • 183
    • 0032316083 scopus 로고    scopus 로고
    • Wafer level electromigration applied to advanced copper/low-k dielectric process sequence integration
    • Pierce D., Educato J., Rand V., and Yost D. Wafer level electromigration applied to advanced copper/low-k dielectric process sequence integration. Proceedings of the IRW, IEEE (1998) 10-15
    • (1998) Proceedings of the IRW, IEEE , pp. 10-15
    • Pierce, D.1    Educato, J.2    Rand, V.3    Yost, D.4
  • 184
    • 34648856883 scopus 로고    scopus 로고
    • Wafer level electromigration testing on via/line structure with a poly-heated method in comparison to standard level tests
    • July 7-11
    • Yap H.-K., Yap K.-L., Tan Y.-C., and Lo K.-F. Wafer level electromigration testing on via/line structure with a poly-heated method in comparison to standard level tests. Proceedings of the IPFA, IEEE. July 7-11 (2003) 75-79
    • (2003) Proceedings of the IPFA, IEEE , pp. 75-79
    • Yap, H.-K.1    Yap, K.-L.2    Tan, Y.-C.3    Lo, K.-F.4
  • 185
    • 33748069470 scopus 로고    scopus 로고
    • Development of highly accelerated electromigration test
    • Tan C.M., Li W., Tan K.T., and Low F. Development of highly accelerated electromigration test. Microelectron. Reliab. 46 (2006) 1638-1642
    • (2006) Microelectron. Reliab. , vol.46 , pp. 1638-1642
    • Tan, C.M.1    Li, W.2    Tan, K.T.3    Low, F.4
  • 186
    • 1842842332 scopus 로고    scopus 로고
    • Electromigration behavior of dual-damascence Cu interconnect structures-structure, width and length dependences
    • Vairagar A.V., Mhaisalkar S., and Krishnamoorthy A. Electromigration behavior of dual-damascence Cu interconnect structures-structure, width and length dependences. Microelectron. Reliab. 44 (2004) 747-754
    • (2004) Microelectron. Reliab. , vol.44 , pp. 747-754
    • Vairagar, A.V.1    Mhaisalkar, S.2    Krishnamoorthy, A.3
  • 187
    • 34648868228 scopus 로고    scopus 로고
    • See for example
  • 190
    • 4544325099 scopus 로고    scopus 로고
    • Reliability improvement in Al metallization: a combination of statistical prediction and failure analytical methodology
    • Zhang G., Tan C.M., Tan K.T., Sim K.Y., and Zhang W.Y. Reliability improvement in Al metallization: a combination of statistical prediction and failure analytical methodology. Microelectron. Reliab. 44 (2004) 1843-1848
    • (2004) Microelectron. Reliab. , vol.44 , pp. 1843-1848
    • Zhang, G.1    Tan, C.M.2    Tan, K.T.3    Sim, K.Y.4    Zhang, W.Y.5
  • 191
    • 3042742800 scopus 로고    scopus 로고
    • Nondestructive void size determination in copper metallization under passivation
    • Gan Z., Tan C.M., and Zhang G. Nondestructive void size determination in copper metallization under passivation. IEEE Trans. Device Mater. Reliab. 3 (2003) 69-78
    • (2003) IEEE Trans. Device Mater. Reliab. , vol.3 , pp. 69-78
    • Gan, Z.1    Tan, C.M.2    Zhang, G.3
  • 192
    • 0005336970 scopus 로고    scopus 로고
    • Imaging of current paths and defects in Al and TiSi interconnects on very-large-scale integrated-circuit chips using near-field optical-probe stimulation and resulting resistance change
    • Nikawa K., Saiki T., Inoue S., and Ohtsu M. Imaging of current paths and defects in Al and TiSi interconnects on very-large-scale integrated-circuit chips using near-field optical-probe stimulation and resulting resistance change. Appl. Phys. Lett. 74 (1999) 1048-1050
    • (1999) Appl. Phys. Lett. , vol.74 , pp. 1048-1050
    • Nikawa, K.1    Saiki, T.2    Inoue, S.3    Ohtsu, M.4
  • 193
    • 0033750952 scopus 로고    scopus 로고
    • Early increase in resistance during electromigration in AlCu-plugged via structure
    • Hoshini K. Early increase in resistance during electromigration in AlCu-plugged via structure. Jpn. J. Appl. Phys. 39 (2000) 994-998
    • (2000) Jpn. J. Appl. Phys. , vol.39 , pp. 994-998
    • Hoshini, K.1
  • 194
    • 0036962353 scopus 로고    scopus 로고
    • Physical failure analysis in semiconductor industry-challenges of copper interconnect process
    • Zschech E., Langer E., Engelmann H.-J., and Dittmar K. Physical failure analysis in semiconductor industry-challenges of copper interconnect process. Mater. Sci. Semicond. Process. 5 (2003) 457-464
    • (2003) Mater. Sci. Semicond. Process. , vol.5 , pp. 457-464
    • Zschech, E.1    Langer, E.2    Engelmann, H.-J.3    Dittmar, K.4
  • 195
    • 0012826308 scopus 로고    scopus 로고
    • Influence of microstructure on electromigration dynamics in submicron Al interconnects: real-time imaging
    • Riege S.P., Prybyla J.A., and Hunt A.W. Influence of microstructure on electromigration dynamics in submicron Al interconnects: real-time imaging. Appl. Phys. Lett. 69 (1996) 2367-2369
    • (1996) Appl. Phys. Lett. , vol.69 , pp. 2367-2369
    • Riege, S.P.1    Prybyla, J.A.2    Hunt, A.W.3
  • 196
    • 0001645678 scopus 로고    scopus 로고
    • The role of texture in the electromigration behavior of pure aluminum line
    • Knorr D.B., and Rodbell K.P. The role of texture in the electromigration behavior of pure aluminum line. J. Appl. Phys. 79 (1996) 2409-2417
    • (1996) J. Appl. Phys. , vol.79 , pp. 2409-2417
    • Knorr, D.B.1    Rodbell, K.P.2
  • 198
    • 11944275568 scopus 로고
    • Grain growth in thin films
    • Thompson C.V. Grain growth in thin films. Annu. Rev. Mater. Sci. 20 (1990) 245-268
    • (1990) Annu. Rev. Mater. Sci. , vol.20 , pp. 245-268
    • Thompson, C.V.1
  • 200
    • 0000865650 scopus 로고
    • Texture in multilayer metallization structures
    • Knorr D.B., Knorr D.P., and Rodbell K.P. Texture in multilayer metallization structures. J. Appl. Phys. 76 (1994) 2671-2680
    • (1994) J. Appl. Phys. , vol.76 , pp. 2671-2680
    • Knorr, D.B.1    Knorr, D.P.2    Rodbell, K.P.3
  • 201
    • 0027608267 scopus 로고
    • Effects of microstructure on interconnect and via reliability: multimodal failure statistics
    • Thompson C.V., and Kahn H. Effects of microstructure on interconnect and via reliability: multimodal failure statistics. J. Eelectron. Mater. 22 (1993) 581
    • (1993) J. Eelectron. Mater. , vol.22 , pp. 581
    • Thompson, C.V.1    Kahn, H.2
  • 202
    • 0027610830 scopus 로고
    • Relationship between texture and electromigration lifetime in sputtered Al-1% Si thin films
    • Campbell A.N., Mikawa R.E., and Knorr D.B. Relationship between texture and electromigration lifetime in sputtered Al-1% Si thin films. J. Electron. Mater. 22 (1993) 589-596
    • (1993) J. Electron. Mater. , vol.22 , pp. 589-596
    • Campbell, A.N.1    Mikawa, R.E.2    Knorr, D.B.3
  • 203
    • 0027222473 scopus 로고
    • The effects of temperature and microstructure on the components of electromigration mass transport
    • March 23-25
    • Dreyer M.L., Fu K.Y., and Varker C.J. The effects of temperature and microstructure on the components of electromigration mass transport. Proceedings of the IRPS, IEEE. March 23-25 (1993) 304-310
    • (1993) Proceedings of the IRPS, IEEE , pp. 304-310
    • Dreyer, M.L.1    Fu, K.Y.2    Varker, C.J.3
  • 204
    • 34648862022 scopus 로고    scopus 로고
    • See the references of 'Effect of compression on grain growth in Al films'
  • 206
    • 84990733152 scopus 로고
    • Mass transport of aluminum by momentum exchange with conducting electronics
    • Black J.R. Mass transport of aluminum by momentum exchange with conducting electronics. Proceedings of the IRPS, IEEE (1968) 148-159
    • (1968) Proceedings of the IRPS, IEEE , pp. 148-159
    • Black, J.R.1
  • 207
    • 0042211176 scopus 로고
    • Effect of redundant microstructure on electromigration-induced failure
    • Learn A.J. Effect of redundant microstructure on electromigration-induced failure. Appl. Phys. Lett. 19 (1971) 292-295
    • (1971) Appl. Phys. Lett. , vol.19 , pp. 292-295
    • Learn, A.J.1
  • 208
    • 0019487986 scopus 로고
    • Effect of texture and grain structure on electromigration in Al-0.5% Cu thin films
    • Vaidya S., and Sinha A.K. Effect of texture and grain structure on electromigration in Al-0.5% Cu thin films. Thin Solid Films 75 (1981) 252-259
    • (1981) Thin Solid Films , vol.75 , pp. 252-259
    • Vaidya, S.1    Sinha, A.K.2
  • 209
    • 0028263293 scopus 로고
    • Two electromigration failure modes in polycrystalline aluminum interconnects
    • April 11-14
    • Atakov E., Clement J.J., and Miner B. Two electromigration failure modes in polycrystalline aluminum interconnects. Proceedings of the IRPS, IEEE. April 11-14 (1994) 213-224
    • (1994) Proceedings of the IRPS, IEEE , pp. 213-224
    • Atakov, E.1    Clement, J.J.2    Miner, B.3
  • 211
    • 0023230764 scopus 로고
    • Effect of grain growth and grain structure on electromigration
    • Kwok T. Effect of grain growth and grain structure on electromigration. Proceedings of the VMIC, IEEE (1987) 456-462
    • (1987) Proceedings of the VMIC, IEEE , pp. 456-462
    • Kwok, T.1
  • 212
    • 0021501342 scopus 로고
    • Electromigration lifetimes studies of submicron-linewidth Al-Cu conductors
    • Iyer S., and Ting C.Y. Electromigration lifetimes studies of submicron-linewidth Al-Cu conductors. IEEE Trans. Electron Devices ED-31 (1984) 1468-1471
    • (1984) IEEE Trans. Electron Devices ED-31 , pp. 1468-1471
    • Iyer, S.1    Ting, C.Y.2
  • 213
    • 51249172567 scopus 로고
    • Electromigration-induced failures in interconnects with bimodal grain size distributions
    • Cho J., and Thompson C.V. Electromigration-induced failures in interconnects with bimodal grain size distributions. J. Electron. Mater. 19 (1990) 1207
    • (1990) J. Electron. Mater. , vol.19 , pp. 1207
    • Cho, J.1    Thompson, C.V.2
  • 214
    • 0006868575 scopus 로고    scopus 로고
    • Electromigration transport mechanisms in Al thin-film conductors
    • Oates A.S. Electromigration transport mechanisms in Al thin-film conductors. J. Appl. Phys. 79 (1996) 163-169
    • (1996) J. Appl. Phys. , vol.79 , pp. 163-169
    • Oates, A.S.1
  • 215
    • 0014789535 scopus 로고
    • Electromigration damage in aluminum film conductors
    • Attardo M.J., and Rosenburg R. Electromigration damage in aluminum film conductors. J. Appl. Phys. 41 (1970) 2381-2386
    • (1970) J. Appl. Phys. , vol.41 , pp. 2381-2386
    • Attardo, M.J.1    Rosenburg, R.2
  • 217
    • 0342913104 scopus 로고
    • Electromigration in Al/SiO2 films prepared by a partially ionized beam deposition technique
    • Li P., Yapsir A.S., Rajan K., and Lu T.-M. Electromigration in Al/SiO2 films prepared by a partially ionized beam deposition technique. Appl. Phys. Lett. 54 (1989) 2443-2445
    • (1989) Appl. Phys. Lett. , vol.54 , pp. 2443-2445
    • Li, P.1    Yapsir, A.S.2    Rajan, K.3    Lu, T.-M.4
  • 218
    • 0000722238 scopus 로고
    • Grain size dependence of electromigration induced failures in narrow interconnects
    • Cho J., and Thomson C.V. Grain size dependence of electromigration induced failures in narrow interconnects. Appl. Phys. Lett. 54 (1989) 2577-2579
    • (1989) Appl. Phys. Lett. , vol.54 , pp. 2577-2579
    • Cho, J.1    Thomson, C.V.2
  • 219
    • 36449001407 scopus 로고
    • Correlation of texture with electromigration behavior in Al metallization
    • Knorr D.B., Tracy D.P., and Rodbell K.P. Correlation of texture with electromigration behavior in Al metallization. Appl. Phys. Lett. 59 (1991) 3141-3143
    • (1991) Appl. Phys. Lett. , vol.59 , pp. 3141-3143
    • Knorr, D.B.1    Tracy, D.P.2    Rodbell, K.P.3
  • 222
    • 85075796021 scopus 로고
    • Effects of texture, microstructure, and alloy content on electromigration of aluminum-based metallization
    • Knorr D.B., and Rodbell K.P. Effects of texture, microstructure, and alloy content on electromigration of aluminum-based metallization. Proceedings of the Submicrometer Metallization, SPIE, vol. 1805 (1992) 210-221
    • (1992) Proceedings of the Submicrometer Metallization, SPIE, vol. 1805 , pp. 210-221
    • Knorr, D.B.1    Rodbell, K.P.2
  • 224
    • 0014820722 scopus 로고
    • Reduction of electromigration in aluminum films by copper doming
    • Ames I., d'Heurle F., and Horstmann R. Reduction of electromigration in aluminum films by copper doming. IBM J. Res. Dev. 14 (1970) 461-463
    • (1970) IBM J. Res. Dev. , vol.14 , pp. 461-463
    • Ames, I.1    d'Heurle, F.2    Horstmann, R.3
  • 225
    • 51249188294 scopus 로고
    • The effect of copper additions on electromigration in aluminum thin films
    • d'Heurle F.M. The effect of copper additions on electromigration in aluminum thin films. Met. Trans. 2 (1971) 683-689
    • (1971) Met. Trans. , vol.2 , pp. 683-689
    • d'Heurle, F.M.1
  • 226
    • 0001166881 scopus 로고
    • Activation energy for electromigration failure in aluminum films containing copper
    • d'Heurle F.M., Ainslie N.G., Gangulee A., and Shine C.M. Activation energy for electromigration failure in aluminum films containing copper. J. Vac. Sci. Technol. 9 (1971) 289-293
    • (1971) J. Vac. Sci. Technol. , vol.9 , pp. 289-293
    • d'Heurle, F.M.1    Ainslie, N.G.2    Gangulee, A.3    Shine, C.M.4
  • 227
    • 0015330411 scopus 로고
    • Effect of microstructure on the electromigration life of thin-film Al-Cu conductors
    • Agarwala B.N., Patnail B., and Schnitzel R. Effect of microstructure on the electromigration life of thin-film Al-Cu conductors. J. Appl. Phys. 43 (1972) 1487-1493
    • (1972) J. Appl. Phys. , vol.43 , pp. 1487-1493
    • Agarwala, B.N.1    Patnail, B.2    Schnitzel, R.3
  • 228
    • 0040398647 scopus 로고
    • Solute effects on electromigration
    • Ho P.S. Solute effects on electromigration. Phys. Rev. B 8 (1973) 4534-4539
    • (1973) Phys. Rev. B , vol.8 , pp. 4534-4539
    • Ho, P.S.1
  • 230
    • 36449004605 scopus 로고
    • 2Cu precipitatin on the electromigration reliability of submicrometer Al(Cu) lines
    • 2Cu precipitatin on the electromigration reliability of submicrometer Al(Cu) lines. J. Appl. Phys. 75 (1994) 3423
    • (1994) J. Appl. Phys. , vol.75 , pp. 3423
    • Colgan, E.G.1    Rodbell, K.P.2
  • 233
    • 36449002166 scopus 로고
    • Electromigration in Al(Cu) two-level structures: effect of Cu and kinetics of damage formation
    • Hu C.-K., Small M.B., and Ho P.S. Electromigration in Al(Cu) two-level structures: effect of Cu and kinetics of damage formation. J. Appl. Phys. 74 (1993) 969
    • (1993) J. Appl. Phys. , vol.74 , pp. 969
    • Hu, C.-K.1    Small, M.B.2    Ho, P.S.3
  • 235
    • 0002440396 scopus 로고    scopus 로고
    • Effect of copper on the microstructure and electromigration lifetime of Ti-AlCu-Ti fine lines in the presence of tungsten diffusion barriers
    • domenicucci A.G., Filippi R.G., Choi K.W., Hu C.-K., and Rodbell K.P. Effect of copper on the microstructure and electromigration lifetime of Ti-AlCu-Ti fine lines in the presence of tungsten diffusion barriers. J. Appl. Phys. 80 (1996) 4952
    • (1996) J. Appl. Phys. , vol.80 , pp. 4952
    • domenicucci, A.G.1    Filippi, R.G.2    Choi, K.W.3    Hu, C.-K.4    Rodbell, K.P.5
  • 236
    • 5544273397 scopus 로고
    • Effect of microstructure on the electromigration life of thin film Al-Cu conductors
    • Agarwala B.N., Patnaik B., and Schnitzel R. Effect of microstructure on the electromigration life of thin film Al-Cu conductors. J. Vac. Sci. Technol. 9 (1972) 283
    • (1972) J. Vac. Sci. Technol. , vol.9 , pp. 283
    • Agarwala, B.N.1    Patnaik, B.2    Schnitzel, R.3
  • 237
    • 0015201795 scopus 로고
    • Reduction of electromigration-induced failure in aluminum metallization through anodization
    • Learn A.J., and Shephered W.H. Reduction of electromigration-induced failure in aluminum metallization through anodization. Proceedings of the IRPS, IEEE (1971) 129-134
    • (1971) Proceedings of the IRPS, IEEE , pp. 129-134
    • Learn, A.J.1    Shephered, W.H.2
  • 238
    • 0015604154 scopus 로고
    • Effect of structure and processing on the electromigration-induced failure in anodized aluminum
    • Learn A.J. Effect of structure and processing on the electromigration-induced failure in anodized aluminum. J. Appl. Phys. 44 (1973) 1251-1258
    • (1973) J. Appl. Phys. , vol.44 , pp. 1251-1258
    • Learn, A.J.1
  • 239
    • 0001427895 scopus 로고
    • The effect of anodization on the electromigration drift velocity in aluminum films
    • Ross C.A., Drewery J.S., Somekh R.E., and Evetts J.E. The effect of anodization on the electromigration drift velocity in aluminum films. J. Appl. Phys. 66 (1989) 2349-2355
    • (1989) J. Appl. Phys. , vol.66 , pp. 2349-2355
    • Ross, C.A.1    Drewery, J.S.2    Somekh, R.E.3    Evetts, J.E.4
  • 241
    • 0000788157 scopus 로고    scopus 로고
    • Highly preferred (1 1 1) texture aluminum-copper films formed with argon plasma treatment of the titanium underlayer and their electromigration endurance as interconnects
    • Kamoshida K., and Ito Y. Highly preferred (1 1 1) texture aluminum-copper films formed with argon plasma treatment of the titanium underlayer and their electromigration endurance as interconnects. J. Vac. Sci. Technol. B 15 (1997) 961-966
    • (1997) J. Vac. Sci. Technol. B , vol.15 , pp. 961-966
    • Kamoshida, K.1    Ito, Y.2
  • 242
    • 0034818692 scopus 로고    scopus 로고
    • An additional effect of texture on the electromigration behavior of aluminum
    • Dorgelo A.M., Vroemen J.A.M.W., and Wolters R.A.M. An additional effect of texture on the electromigration behavior of aluminum. Microelectron. Eng. 55 (2001) 337-340
    • (2001) Microelectron. Eng. , vol.55 , pp. 337-340
    • Dorgelo, A.M.1    Vroemen, J.A.M.W.2    Wolters, R.A.M.3
  • 243
    • 84954173052 scopus 로고
    • A 0.25 μm via plug process using selective CVD aluminum for multilevel interconnection
    • Amazawa T., and Arita Y. A 0.25 μm via plug process using selective CVD aluminum for multilevel interconnection. Proceedings of the IEDM, IEEE (1991) 265-268
    • (1991) Proceedings of the IEDM, IEEE , pp. 265-268
    • Amazawa, T.1    Arita, Y.2
  • 245
    • 0023846816 scopus 로고
    • Effects of annealing temperature on electromigration performance of multilayer metallization system
    • Hoang H.H. Effects of annealing temperature on electromigration performance of multilayer metallization system. Proceedings of the IRPS, IEEE (1988) 173-178
    • (1988) Proceedings of the IRPS, IEEE , pp. 173-178
    • Hoang, H.H.1
  • 246
  • 247
    • 0033284737 scopus 로고    scopus 로고
    • Impact of intermetal dielectric process on Al via electromigration reliability
    • Liu X., Lo K.F., Chin K.Y., Guo Q., and The G.L. Impact of intermetal dielectric process on Al via electromigration reliability. Proceedings of the IPFA, IEEE (1999) 60-63
    • (1999) Proceedings of the IPFA, IEEE , pp. 60-63
    • Liu, X.1    Lo, K.F.2    Chin, K.Y.3    Guo, Q.4    The, G.L.5
  • 248
    • 34648868227 scopus 로고    scopus 로고
    • JCPDS, Card No. 38-1420.
  • 249
    • 34648842593 scopus 로고    scopus 로고
    • JCPDS, Card No. 4-787.
  • 250
    • 0005620399 scopus 로고    scopus 로고
    • In situ electron microscopy studies of electromigration in stacked Al(Cu)/TiN interconnects
    • Lau J.T., Prybla J.A., and Theiss S.K. In situ electron microscopy studies of electromigration in stacked Al(Cu)/TiN interconnects. Appl. Phys. Lett. 76 (2000) 164-166
    • (2000) Appl. Phys. Lett. , vol.76 , pp. 164-166
    • Lau, J.T.1    Prybla, J.A.2    Theiss, S.K.3
  • 251
    • 36449000175 scopus 로고
    • X, the epitaxial continuity at the Al/TiN interface, and its electromigration endurance in multilayered interconnection
    • X, the epitaxial continuity at the Al/TiN interface, and its electromigration endurance in multilayered interconnection. J. Appl. Phys. 78 (1995) 1719-1724
    • (1995) J. Appl. Phys. , vol.78 , pp. 1719-1724
    • Byun, J.S.1    Rha, K.G.2    Kim, J.J.3    Kim, W.S.4    Kim, H.N.5    Cho, H.S.6    Kim, H.J.7
  • 252
    • 0347079492 scopus 로고
    • Ti thickness-dependent electromigration resistance for Ti/Al-Cu-Si metallization with and without rapid-thermal-anneal in an ammonia ambient
    • Fu K., Kawasaki H., Olowolafe J.O., and Pyle R.E. Ti thickness-dependent electromigration resistance for Ti/Al-Cu-Si metallization with and without rapid-thermal-anneal in an ammonia ambient. Proceedings of the Submicrometer Metallization, SPIE, vol. 1805 (1992) 263-273
    • (1992) Proceedings of the Submicrometer Metallization, SPIE, vol. 1805 , pp. 263-273
    • Fu, K.1    Kawasaki, H.2    Olowolafe, J.O.3    Pyle, R.E.4
  • 253
  • 254
    • 0025564922 scopus 로고
    • Electromigration resistance of TiN-layered Ti-doped Al interconnects
    • Atakov E.M. Electromigration resistance of TiN-layered Ti-doped Al interconnects. Proceedings of the VMIC, IEEE (1990) 360-362
    • (1990) Proceedings of the VMIC, IEEE , pp. 360-362
    • Atakov, E.M.1
  • 256
    • 0009419110 scopus 로고
    • Right-angle bends in thin strip conductors
    • Hagedorn F.B., and Hall P.M. Right-angle bends in thin strip conductors. J. Appl. Phys. 34 (1963) 128-133
    • (1963) J. Appl. Phys. , vol.34 , pp. 128-133
    • Hagedorn, F.B.1    Hall, P.M.2
  • 257
    • 0023173826 scopus 로고
    • Current density and temperature distributions in multilevel interconnection with studs and vias
    • Kwok T., Nguyen T., Ho P., and Yip S. Current density and temperature distributions in multilevel interconnection with studs and vias. Proceedings of the IRPS, IEEE (1987) 130-135
    • (1987) Proceedings of the IRPS, IEEE , pp. 130-135
    • Kwok, T.1    Nguyen, T.2    Ho, P.3    Yip, S.4
  • 258
    • 0025549964 scopus 로고
    • Finite element numerical modeling of currents in VSLI interconnects
    • June 12-13
    • Enver A., and Clement J.J. Finite element numerical modeling of currents in VSLI interconnects. Proceedings of the VMIC, IEEE. June 12-13 (1990) 149-156
    • (1990) Proceedings of the VMIC, IEEE , pp. 149-156
    • Enver, A.1    Clement, J.J.2
  • 260
    • 85067863213 scopus 로고
    • Three dimensional finite element determination of current density and temperature distributuins in pillar like vias
    • June 11-12
    • Trattles J.T., O'Neill A.G., and Mecrow B.G. Three dimensional finite element determination of current density and temperature distributuins in pillar like vias. Proceedings of the VMIC, IEEE. June 11-12 (1991) 343-345
    • (1991) Proceedings of the VMIC, IEEE , pp. 343-345
    • Trattles, J.T.1    O'Neill, A.G.2    Mecrow, B.G.3
  • 262
    • 0026836905 scopus 로고
    • Three-dimensional simulations of temperature and current density distribution in a via structure
    • Weide K., and Hasse W. Three-dimensional simulations of temperature and current density distribution in a via structure. Proceedings of the IRPS, IEEE (1992) 361-365
    • (1992) Proceedings of the IRPS, IEEE , pp. 361-365
    • Weide, K.1    Hasse, W.2
  • 263
    • 0027628195 scopus 로고
    • Three-dimensional finite-element investigation of current crowding and peak temperatures in VLSI multilevel interconnections
    • Trattles J.T., O'Neill A.G., and Mecrow B.C. Three-dimensional finite-element investigation of current crowding and peak temperatures in VLSI multilevel interconnections. IEEE Trans. Electron Devices 40 (1993) 1344-1347
    • (1993) IEEE Trans. Electron Devices , vol.40 , pp. 1344-1347
    • Trattles, J.T.1    O'Neill, A.G.2    Mecrow, B.C.3
  • 264
    • 0031185762 scopus 로고    scopus 로고
    • Shape effect on electromigration in VLSI interconnects
    • Gonzalez J.L., and Rubio A. Shape effect on electromigration in VLSI interconnects. Microelectron. Reliab. 37 (1997) 1073-1078
    • (1997) Microelectron. Reliab. , vol.37 , pp. 1073-1078
    • Gonzalez, J.L.1    Rubio, A.2
  • 265
    • 0035904912 scopus 로고    scopus 로고
    • Effect of corner position and operating condition on electromigration failure in angled bamboo lines without passivation layer
    • Sasagawa K., Hasegawa M., Naito K., Saka M., and Abe H. Effect of corner position and operating condition on electromigration failure in angled bamboo lines without passivation layer. Thin Solid Films 401 (2001) 255-266
    • (2001) Thin Solid Films , vol.401 , pp. 255-266
    • Sasagawa, K.1    Hasegawa, M.2    Naito, K.3    Saka, M.4    Abe, H.5
  • 266
    • 0003179472 scopus 로고    scopus 로고
    • Influence of W via on the mechanism of electromigration failure in Al-0.5 Cu interconnects
    • Le H.A., Tso N.C., Rost T.A., and Kim C.-U. Influence of W via on the mechanism of electromigration failure in Al-0.5 Cu interconnects. Appl. Phys. Lett. 72 (1998) 2814-2816
    • (1998) Appl. Phys. Lett. , vol.72 , pp. 2814-2816
    • Le, H.A.1    Tso, N.C.2    Rost, T.A.3    Kim, C.-U.4
  • 267
    • 0344946287 scopus 로고    scopus 로고
    • Effect of electron flow direction on the model parameters of electromigration-induced failure of copper interconnects
    • Padhi D., and Dixit G. Effect of electron flow direction on the model parameters of electromigration-induced failure of copper interconnects. J. Appl. Phys. 94 (2003) 6463
    • (2003) J. Appl. Phys. , vol.94 , pp. 6463
    • Padhi, D.1    Dixit, G.2
  • 268
    • 0036892397 scopus 로고    scopus 로고
    • Electromigration reliability issues in dual-damascene Cu interconnects
    • Ogawa E.T., Lee K.D., Blascheke V.A., and Ho P.S. Electromigration reliability issues in dual-damascene Cu interconnects. IEEE Trans. Reliab. 51 (2002) 403
    • (2002) IEEE Trans. Reliab. , vol.51 , pp. 403
    • Ogawa, E.T.1    Lee, K.D.2    Blascheke, V.A.3    Ho, P.S.4
  • 269
    • 0037805706 scopus 로고    scopus 로고
    • Effect of liner thickness on electromigration lifetime
    • Liniger E.G., Hu C.-K., and Gignac L.M. Effect of liner thickness on electromigration lifetime. J. Appl. Phys. 93 (2003) 9576
    • (2003) J. Appl. Phys. , vol.93 , pp. 9576
    • Liniger, E.G.1    Hu, C.-K.2    Gignac, L.M.3
  • 270
    • 34648871204 scopus 로고    scopus 로고
    • Effects of W-plug via arrangement on the electromigration lifetime of Wide Line Interconnects
    • Skala S., and Bothra S. Effects of W-plug via arrangement on the electromigration lifetime of Wide Line Interconnects. Proceedings of the IITC, IEEE (1998) 98
    • (1998) Proceedings of the IITC, IEEE , pp. 98
    • Skala, S.1    Bothra, S.2
  • 271
    • 0041967471 scopus 로고    scopus 로고
    • Reservoir modeling for electromigration improvement of metal system with refractory barriers
    • Dion M.J. Reservoir modeling for electromigration improvement of metal system with refractory barriers. Proceedings of the IRPS, IEEE (2001) 327
    • (2001) Proceedings of the IRPS, IEEE , pp. 327
    • Dion, M.J.1
  • 272
    • 34648856878 scopus 로고    scopus 로고
    • Analsysis of the reservoir length and its effect on electromigration lifetime
    • Le H.A., Ting L., Tso N.C., and Kim C.-U. Analsysis of the reservoir length and its effect on electromigration lifetime. J. Mater. Res. 21 (2006)
    • (2006) J. Mater. Res. , vol.21
    • Le, H.A.1    Ting, L.2    Tso, N.C.3    Kim, C.-U.4
  • 273
    • 0345603108 scopus 로고    scopus 로고
    • Effects of mechanical stress at no current stressed area on electromigration reliability of multilevel interconnects
    • Park Y.-B., and Jeon I.-S. Effects of mechanical stress at no current stressed area on electromigration reliability of multilevel interconnects. Microelectron. Eng. 71 (2004) 76
    • (2004) Microelectron. Eng. , vol.71 , pp. 76
    • Park, Y.-B.1    Jeon, I.-S.2
  • 274
    • 0041967472 scopus 로고    scopus 로고
    • Simulation and experimental characterization of reservoir and via layout effects on the electromigration lifetime
    • Nguyen H.V., Salm C., Wenzel R., Mouthaan A.J., and Kuper F.G. Simulation and experimental characterization of reservoir and via layout effects on the electromigration lifetime. Microelectron. Reliab. 42 (2002) 1421
    • (2002) Microelectron. Reliab. , vol.42 , pp. 1421
    • Nguyen, H.V.1    Salm, C.2    Wenzel, R.3    Mouthaan, A.J.4    Kuper, F.G.5
  • 277
    • 4344609102 scopus 로고    scopus 로고
    • Effect of surface treatment on electromigration in sub-micron Cu damascene interconnects
    • Vairagar A.V., Mhaisalkar S.G., and Krishnamoorthy A. Effect of surface treatment on electromigration in sub-micron Cu damascene interconnects. Thin Solid Films 462-463 (2004) 325
    • (2004) Thin Solid Films , vol.462-463 , pp. 325
    • Vairagar, A.V.1    Mhaisalkar, S.G.2    Krishnamoorthy, A.3
  • 279
    • 84903855817 scopus 로고    scopus 로고
    • Identification of electromigration dominant diffusion path for Cu damascene interconnects and effect of plasma treatment and barrier dielectrics on electromigration performance
    • Usuni T., Oki T., Miyajima H., Tabuchi K., Watanabe K., Hasegawa T., and Shibata H. Identification of electromigration dominant diffusion path for Cu damascene interconnects and effect of plasma treatment and barrier dielectrics on electromigration performance. Proceedings of the IRPS, IEEE (2004) 246-250
    • (2004) Proceedings of the IRPS, IEEE , pp. 246-250
    • Usuni, T.1    Oki, T.2    Miyajima, H.3    Tabuchi, K.4    Watanabe, K.5    Hasegawa, T.6    Shibata, H.7
  • 280
    • 33644903829 scopus 로고    scopus 로고
    • Effect of plasma treatment and dielectric diffusion barrier on electromigration performance of copper damascene interconnects
    • Usui T., Miyajima H., Masuda H., Tabuchi K., Watanbe K., Hasegawa T., and Shibata H. Effect of plasma treatment and dielectric diffusion barrier on electromigration performance of copper damascene interconnects. Jpn. J. Appl. Phys. Part 1 vol. 45 (2006) 1570
    • (2006) Jpn. J. Appl. Phys. Part 1 , vol.45 , pp. 1570
    • Usui, T.1    Miyajima, H.2    Masuda, H.3    Tabuchi, K.4    Watanbe, K.5    Hasegawa, T.6    Shibata, H.7
  • 281
    • 0034831699 scopus 로고    scopus 로고
    • Key reliability issues for copper integration in damascene architecture
    • Gonella R. Key reliability issues for copper integration in damascene architecture. Microelectron. Eng. 55 (2001) 245-255
    • (2001) Microelectron. Eng. , vol.55 , pp. 245-255
    • Gonella, R.1
  • 284
    • 0142011584 scopus 로고    scopus 로고
    • Influence of low-k dry etch chemistries on the properties of copper and a Ta-based diffusion barrier
    • Ernur D., Iacopi F., Carbonell L., Struyf H., and Maex K. Influence of low-k dry etch chemistries on the properties of copper and a Ta-based diffusion barrier. Microelectron. Eng. 70 (2003) 285-292
    • (2003) Microelectron. Eng. , vol.70 , pp. 285-292
    • Ernur, D.1    Iacopi, F.2    Carbonell, L.3    Struyf, H.4    Maex, K.5
  • 285
    • 0037323106 scopus 로고    scopus 로고
    • Relationship between interfacial adhesion and electromigration in Cu metallization
    • Lane M.W., Linger E.G., and Lloyd J.R. Relationship between interfacial adhesion and electromigration in Cu metallization. J. Appl. Phys. 93 (2003) 1417-1421
    • (2003) J. Appl. Phys. , vol.93 , pp. 1417-1421
    • Lane, M.W.1    Linger, E.G.2    Lloyd, J.R.3
  • 288
    • 0042193307 scopus 로고    scopus 로고
    • Dependence of copper interconnect electromigration phenomenon on barrier metal materials
    • Hayashi M., Nakano S., and Wada T. Dependence of copper interconnect electromigration phenomenon on barrier metal materials. Microelectron. Reliab. 43 (2003) 1545-1550
    • (2003) Microelectron. Reliab. , vol.43 , pp. 1545-1550
    • Hayashi, M.1    Nakano, S.2    Wada, T.3
  • 290
    • 34648860037 scopus 로고
    • x diffusion barriers between Si and Cu
    • x diffusion barriers between Si and Cu. Proceedings of the VMIC, IEEE (1995) 182-185
    • (1995) Proceedings of the VMIC, IEEE , pp. 182-185
    • Oku, T.1
  • 293
    • 0008988230 scopus 로고
    • Tantalum as a diffusion barrier between copper and silicon: failure mechanism and effect of nitrogen additions
    • Holloway K., Fryer P.M., Cabral Jr. C., Harper J.M.E., Bailey P.J., and Kelleher K.H. Tantalum as a diffusion barrier between copper and silicon: failure mechanism and effect of nitrogen additions. J. Appl. Phys. 71 (1992) 5433-5443
    • (1992) J. Appl. Phys. , vol.71 , pp. 5433-5443
    • Holloway, K.1    Fryer, P.M.2    Cabral Jr., C.3    Harper, J.M.E.4    Bailey, P.J.5    Kelleher, K.H.6
  • 296
    • 0000156618 scopus 로고
    • Diffusion barrier effects of transition metals for Cu/M/Si multilayers (M = Cr, Ti, Nb, Mo, Ta, W)
    • Ono H., Nakano T., and Ohta T. Diffusion barrier effects of transition metals for Cu/M/Si multilayers (M = Cr, Ti, Nb, Mo, Ta, W). Appl. Phys. Lett. 64 (1994) 1511-1513
    • (1994) Appl. Phys. Lett. , vol.64 , pp. 1511-1513
    • Ono, H.1    Nakano, T.2    Ohta, T.3
  • 297
    • 0000423171 scopus 로고    scopus 로고
    • Diffusion barrier performance of chemically vapor deposited TiN films prepared using rakis-dimethyl-amino titanium in the Cu/TiN/Si structure
    • Kim D.-H., Cho S.-L., Kim K.-B., Kim J.J., Park J.W., and Kim J.J. Diffusion barrier performance of chemically vapor deposited TiN films prepared using rakis-dimethyl-amino titanium in the Cu/TiN/Si structure. Appl. Phys. Lett. 69 (1996) 4182-4184
    • (1996) Appl. Phys. Lett. , vol.69 , pp. 4182-4184
    • Kim, D.-H.1    Cho, S.-L.2    Kim, K.-B.3    Kim, J.J.4    Park, J.W.5    Kim, J.J.6
  • 299
    • 36449007074 scopus 로고
    • Diffusion barrier properties of TiW between Si and Cu
    • Wang S.-Q., Suthar S., Hoeflich C., and Burrow B.J. Diffusion barrier properties of TiW between Si and Cu. J. Appl. Phys. 73 (1993) 2301-2321
    • (1993) J. Appl. Phys. , vol.73 , pp. 2301-2321
    • Wang, S.-Q.1    Suthar, S.2    Hoeflich, C.3    Burrow, B.J.4
  • 300
    • 0000786522 scopus 로고
    • Electrical characterization of conductive and non-conductive barrier layers for Cu-metallization
    • Ahrens C., Depta D., Schitthelm F., and Wilhelm S. Electrical characterization of conductive and non-conductive barrier layers for Cu-metallization. Appl. Surf. Sci. 91 (1995) 285-290
    • (1995) Appl. Surf. Sci. , vol.91 , pp. 285-290
    • Ahrens, C.1    Depta, D.2    Schitthelm, F.3    Wilhelm, S.4
  • 302
    • 0033640281 scopus 로고    scopus 로고
    • Copper metallization for advanced IC: requirements and technological solution
    • Morand Y. Copper metallization for advanced IC: requirements and technological solution. Mircoelectron. Eng. 50 (2000) 391-401
    • (2000) Mircoelectron. Eng. , vol.50 , pp. 391-401
    • Morand, Y.1
  • 303
    • 4344645813 scopus 로고    scopus 로고
    • Barrier layer effects on reliability of copper metallization
    • Yang Z.W., Zhang D.H., Li C.Y., Tan C.M., and Prasad K. Barrier layer effects on reliability of copper metallization. Thin Solid Films 462-463 (2004) 288-291
    • (2004) Thin Solid Films , vol.462-463 , pp. 288-291
    • Yang, Z.W.1    Zhang, D.H.2    Li, C.Y.3    Tan, C.M.4    Prasad, K.5
  • 306
    • 0001294471 scopus 로고    scopus 로고
    • Comparison of the diffusion barrier properties of chemical-vapor-deposited TaN and sputtered TaN between Cu and Si
    • Tsai M.H., Sun S.C., Tsai C.E., Chuang S.H., and Chiu H.T. Comparison of the diffusion barrier properties of chemical-vapor-deposited TaN and sputtered TaN between Cu and Si. J. Appl. Phys. 79 (1996) 6932-6938
    • (1996) J. Appl. Phys. , vol.79 , pp. 6932-6938
    • Tsai, M.H.1    Sun, S.C.2    Tsai, C.E.3    Chuang, S.H.4    Chiu, H.T.5
  • 308
    • 0035823886 scopus 로고    scopus 로고
    • Investigating the microstructure-reliability relationship in Cu damascene lines
    • Field D.P., Dornisch D., and Tong H.H. Investigating the microstructure-reliability relationship in Cu damascene lines. Scripta Mater. 45 (2001) 1069-1075
    • (2001) Scripta Mater. , vol.45 , pp. 1069-1075
    • Field, D.P.1    Dornisch, D.2    Tong, H.H.3
  • 309
    • 25644443327 scopus 로고    scopus 로고
    • The influence of barrier types on the microstructure and electromigration characteristics of electroplated copper
    • Lee H., and Lopatin S.D. The influence of barrier types on the microstructure and electromigration characteristics of electroplated copper. Thin Solid Films 492 (2005) 279-284
    • (2005) Thin Solid Films , vol.492 , pp. 279-284
    • Lee, H.1    Lopatin, S.D.2
  • 312
    • 28044445431 scopus 로고    scopus 로고
    • Correlation of electromigration defects in small damascene Cu interconnects with their microstructure
    • Wendrock H., Mirpuri K., Menzel S., Schindler G., and Wetzig K. Correlation of electromigration defects in small damascene Cu interconnects with their microstructure. Microelectron. Eng. 82 (2005) 660-664
    • (2005) Microelectron. Eng. , vol.82 , pp. 660-664
    • Wendrock, H.1    Mirpuri, K.2    Menzel, S.3    Schindler, G.4    Wetzig, K.5
  • 313
    • 13444304113 scopus 로고    scopus 로고
    • Electromigration resistance-related microstructural change with rapid thermal annealing of electroplated copper films
    • Kwon D., Park H., and Lee C. Electromigration resistance-related microstructural change with rapid thermal annealing of electroplated copper films. This Solid Films 475 (2005) 58-62
    • (2005) This Solid Films , vol.475 , pp. 58-62
    • Kwon, D.1    Park, H.2    Lee, C.3
  • 314
    • 0037415942 scopus 로고    scopus 로고
    • Effects of the high-pressure annealing process on the reflow phenomenon of copper interconnections for large scale integrated circuits
    • Onishi T., Fujii H., Yoshikawa T., Munemasa J., Inoue T., and Miyagaki A. Effects of the high-pressure annealing process on the reflow phenomenon of copper interconnections for large scale integrated circuits. Thin Solid Films 425 (2003) 265
    • (2003) Thin Solid Films , vol.425 , pp. 265
    • Onishi, T.1    Fujii, H.2    Yoshikawa, T.3    Munemasa, J.4    Inoue, T.5    Miyagaki, A.6
  • 316
    • 49549119942 scopus 로고    scopus 로고
    • Effect of Joule heating on the determination of electromigration parameters
    • Federspiel X., Girault V., and Ney D. Effect of Joule heating on the determination of electromigration parameters. Proceedings of the IRW, IEEE (2003) 139-142
    • (2003) Proceedings of the IRW, IEEE , pp. 139-142
    • Federspiel, X.1    Girault, V.2    Ney, D.3
  • 319
    • 0034831643 scopus 로고    scopus 로고
    • The effect of low dielectric polymer thickness on the electromigration characteristics of Al(1% Cu-0.5% Si) thin films
    • Yoo S., Eun B.S., Kim Y.-H., and Chung Y.-C. The effect of low dielectric polymer thickness on the electromigration characteristics of Al(1% Cu-0.5% Si) thin films. Thin Solid Films 382 (2001) 222-229
    • (2001) Thin Solid Films , vol.382 , pp. 222-229
    • Yoo, S.1    Eun, B.S.2    Kim, Y.-H.3    Chung, Y.-C.4
  • 320
    • 0942277277 scopus 로고    scopus 로고
    • An introduction to Cu electromigration
    • Hau-Riege C.S. An introduction to Cu electromigration. Microelectron. Reliab. 44 (2004) 195-205
    • (2004) Microelectron. Reliab. , vol.44 , pp. 195-205
    • Hau-Riege, C.S.1
  • 321
    • 0035263143 scopus 로고    scopus 로고
    • Fractual analysis of electromigration induced changes of surface topography in Au conductor lines
    • Panin A., Shuguroy A., and Schreiber J. Fractual analysis of electromigration induced changes of surface topography in Au conductor lines. Surf. Sci. 524 (2001) 191-198
    • (2001) Surf. Sci. , vol.524 , pp. 191-198
    • Panin, A.1    Shuguroy, A.2    Schreiber, J.3
  • 323
    • 4544302330 scopus 로고    scopus 로고
    • Electromigration-induced surface evolution in bamboo lines with transgranular and intergranular edge voids
    • Nathan M., Averbuch A., and Israeli M. Electromigration-induced surface evolution in bamboo lines with transgranular and intergranular edge voids. Thin Solid Films 466 (2004) 347-350
    • (2004) Thin Solid Films , vol.466 , pp. 347-350
    • Nathan, M.1    Averbuch, A.2    Israeli, M.3
  • 324
    • 33845249260 scopus 로고    scopus 로고
    • L. Peters, Achieving superior interconnect reliability at 65 nm and beyond, Semicond. Int., November 1, 2006.
  • 326
    • 33747566850 scopus 로고    scopus 로고
    • 3-D ICs: a novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration
    • Banerjee K., Souri S.J., Kapur P., and Saraswat K.C. 3-D ICs: a novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration. Proceedings of the IEEE, vol. 89 (2001) 602-633
    • (2001) Proceedings of the IEEE, vol. 89 , pp. 602-633
    • Banerjee, K.1    Souri, S.J.2    Kapur, P.3    Saraswat, K.C.4
  • 328
  • 332
    • 33845242278 scopus 로고    scopus 로고
    • P. Singer, Copper/low-K challenges for 45 and 32 nm, Semicond. Int., November1, 2006.
  • 335
    • 33644958333 scopus 로고    scopus 로고
    • A comparative scaling analysis of metallic and carbon nanotube interconnections for nanometer scale VLSI technologies
    • Srivastava N., and Banerjee K. A comparative scaling analysis of metallic and carbon nanotube interconnections for nanometer scale VLSI technologies. Proceedings of the VMIC, IEEE (2004) 393-398
    • (2004) Proceedings of the VMIC, IEEE , pp. 393-398
    • Srivastava, N.1    Banerjee, K.2
  • 336
    • 33751091481 scopus 로고    scopus 로고
    • Change in thermal conductivity of cylindrical silicon nanowires induced by surface bonding modification
    • Gu M.X., Yeung T.C.A., Tan C.M., and Nosik V. Change in thermal conductivity of cylindrical silicon nanowires induced by surface bonding modification. J. Appl. Phys. 100 (2006) 94304
    • (2006) J. Appl. Phys. , vol.100 , pp. 94304
    • Gu, M.X.1    Yeung, T.C.A.2    Tan, C.M.3    Nosik, V.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.