Temperature-dependent inelastic response of passivated copper films: Experiments, analyses, and implications

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 4, 2003, Pages 1258-1264

  Shen, Y L ^a   Ramamurty, U ^b  

^a University of New Mexico   (United States)

^b INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; SILICA; STRAIN HARDENING; STRESS RELAXATION; THERMOMECHANICAL TREATMENT;

PASSIVATED FILMS;

COPPER;

EID: 0141569935     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1574051     Document Type: Conference Paper

References (33)

1. R. P. Vinci, E. M. Zeilinski, and J. C. Bravman, Thin Solid Films 262, 142 (1995).
2. M. D. Thouless, K. P. Rodbell, and C. Cabral, Jr., J. Vac. Sci. Technol. A 14, 2454 (1996).
3. P. A. Flinn, J. Mater. Res. 6, 1498 (1991).
4. M. D. Thouless, J. Gupta, and J. M. E. Harper, J. Mater. Res. 8, 1845 (1993).
5. S. P. Baker, A. Kretschmann, and E. Arzt, Acta Mater. 49, 2145 (2001).
6. D. Weiss, H. Gao, and E. Arzt, Acta Mater. 49, 2395 (2001).
7. Y.-L. Shen, S. Suresh, M. Y. He, A. Bagchi, O. Kienzle, M. Ruhle, and A. G. Evans, J. Mater. Res. 13, 1928 (1998).
8. R. M. Keller, S. P. Baker, and E. Arzt, J. Mater. Res. 13, 1307 (1998).
9. G. Dehm, D. Weiss, and E. Arzt, Mater. Sci. Eng., A 309-310, 468 (2001).
10. V. Weihnacht and W. Bruckner, Acta Mater. 49, 2365 (2001).
11. J. M. E. Harper, C. Cabral, P. C. Andricacos, L. Gignac, I. C. Noyan, K. P. Rodbell, and C. K. Hu, J. Appl. Phys. 86, 2516 (1999).
12. M. Hommel and O. Kraft, Acta Mater. 49, 3935 (2001).
13. W. D. Nix, Metall. Trans. A 20A, 2217 (1989).
14. P. A. Flinn, D. S. Gardner, and W. D. Nix, IEEE Trans. Electron Devices ED-34, 689 (1987).
15. Y.-L. Shen and S. Suresh, Acta Metall. Mater. 43, 3915 (1995).
16. A. Mendelson, Plasticity: Theory and Application (MacMillan, New York, 1968), p. 94.
17. S. Suresh, Fatigue of Materials, 2nd ed. (Cambridge University Press, Cambridge, U.K., 1998), p. 25.
18. J. P. Hirth and J. Lothe, Theory of Dislocations, 2nd ed. (Wiley-Interscience, New York, 1982), p. 831.
19. M. Hommel, O. Kraft, and E. Arzt, J. Mater. Res. 14, 2372 (1999).
20. Y.-L. Shen, J. Vac. Sci. Technol. B 17, 2115 (1999).
21. J.-K. Zhao, W.-J. Qi, and P. S. Ho, Microelectron. Reliab. 42, 27 (2002).
22. ABAQUS, Version 6.1 (Hibbit, Karlson and Sorensen, Pawtucket, RI. 2000).
23. Y.-L. Shen, S. Suresh, and I. A. Blech, J. Appl. Phys. 80, 1388 (1996).
24. Y.-L. Shen, J. Mater. Res. 12, 2219 (1997).
25. Y.-L. Shen, J. Appl. Phys. 82, 1578 (1997).
26. A. Gouldstone, Y.-L. Shen, S. Suresh, and C. V. Thompson, J. Mater. Res. 13, 1956 (1998).
27. M. S. Kilijanski and Y.-L. Shen, Microelectron. Reliab. 42, 259 (2002).
28. Y.-L. Shen, J. Appl. Phys. 84, 5525 (1998).
29. Y.-L. Shen and Y. L. Guo, J. Vac. Sci. Technol. B 17, 448 (1999).
30. A. I. Sauter and W. D. Nix, IEEE Trans. Compon., Hybrids, Manuf. Technol. 15, 594 (1992).
31. J. Lee and A. S. Mack, IEEE Trans. Semicond. Manuf. 11, 458 (1998).
32. L. T. Shi and K. N. Tu, J. Appl. Phys. 77, 3037 (1995).
33. T. Marieb, A. S. Mack, N. Cox, D. Gardner, and X. C. Mu, Mater. Res. Soc. Symp. Proc. 403, 639 (1996).