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Volumn 46, Issue 9-11, 2006, Pages 1638-1642

Development of highly accelerated electromigration test

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; FINITE ELEMENT METHOD; PHYSICAL PROPERTIES; STATISTICAL METHODS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 33748069470     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2006.07.034     Document Type: Article
Times cited : (6)

References (12)
  • 1
    • 11144245530 scopus 로고    scopus 로고
    • Dynamic study of the physical processes in the intrinsic line electromigration of deep-submicron cooper and aluminum interconnects
    • Tan C.M., Zhang G., and Gan Z. Dynamic study of the physical processes in the intrinsic line electromigration of deep-submicron cooper and aluminum interconnects. IEEE Transactions on Device and Materials Reliability 4 3 (2004)
    • (2004) IEEE Transactions on Device and Materials Reliability , vol.4 , Issue.3
    • Tan, C.M.1    Zhang, G.2    Gan, Z.3
  • 2
    • 0033686705 scopus 로고    scopus 로고
    • Cher Ming Tan, Yeo KNC. Reliability Statistics Perspective on Standard Wafer-level Electromigration Accelerated Test (SWEAT). Electrical and Computer Engineering, 2000 Canadian Conference on, vol. 167-72, 2000.
  • 3
    • 85190258618 scopus 로고    scopus 로고
    • N.K. Yap, A. Yap, Y.C. Tan, K.F. Lo, Electromigration Test on Via Line Structure with a Self-heating Method, Integrated Reliability Workshop Final Report, IEEE International, pp. 162-4, 2002.
  • 4
    • 11144245530 scopus 로고    scopus 로고
    • Dynamic study of the physical processes in the intrinsic line electromigration of deep-submicron copper and aluminum interconnects, device and materials reliability
    • Tan C.M., Zhang G., and Gan Z.H. Dynamic study of the physical processes in the intrinsic line electromigration of deep-submicron copper and aluminum interconnects, device and materials reliability. IEEE Transcations 4 3 (2004) 450-456
    • (2004) IEEE Transcations , vol.4 , Issue.3 , pp. 450-456
    • Tan, C.M.1    Zhang, G.2    Gan, Z.H.3
  • 5
    • 0035456975 scopus 로고    scopus 로고
    • Three-dimensional voids simulation in chip metallization structures: a contribution to reliability evaluation
    • Dalleau D., and Weide-Zaage K. Three-dimensional voids simulation in chip metallization structures: a contribution to reliability evaluation. Microelectronics Reliability 41 (2001) 1625
    • (2001) Microelectronics Reliability , vol.41 , pp. 1625
    • Dalleau, D.1    Weide-Zaage, K.2
  • 6
    • 33748072817 scopus 로고    scopus 로고
    • C.M. Tan and A. Roy, Investigation of the Effect of Temperature and Stress Gradients on Accelerated EM test for Cu Narrow Interconnects, Thin Solid Film, Article in press, 2005.
  • 7
    • 0031341214 scopus 로고    scopus 로고
    • The influence of TiN ARC thickness on stress-induced void formation in tungsten-plug via
    • Wall J.A. The influence of TiN ARC thickness on stress-induced void formation in tungsten-plug via. IEEE Transactions on Electron Devices 44 (1997) 2213
    • (1997) IEEE Transactions on Electron Devices , vol.44 , pp. 2213
    • Wall, J.A.1
  • 8
    • 33748064016 scopus 로고    scopus 로고
    • G. Zhang, Reliability Data Analysis Software Development in Semiconductor Industry, M. Eng Dissertation, School of EEE, NTU (2001).
  • 9
    • 33748052399 scopus 로고    scopus 로고
    • G. Zhang, C.M. Tan, Reliability Data Analysis Software Development, Microelectronic Yield, Reliability, and Advanced Packaging, Proceedings of SPIE, Vol. 4229, 2000.
  • 12
    • 0002210265 scopus 로고
    • On the convergence properties of the EM algorithm
    • Wu C.F.J. On the convergence properties of the EM algorithm. Annals of Statistics 11 (1983) 95-103
    • (1983) Annals of Statistics , vol.11 , pp. 95-103
    • Wu, C.F.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.