Effect of thermal gradients on the electromigration life-time in power electronics

IEEE International Reliability Physics Symposium Proceedings

Volumn 2004-January, Issue January, 2004, Pages 619-620

  Nguyen, H V ^a   Salm, C ^a   Krabbenborg, B ^b   Weide Zaage, K ^c   Bisschop, J ^b   Mouthaan, A J ^a   Kuper, F G ^a,b  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b NXP SEMICONDUCTORS   (Netherlands)

^c Laboratorium für Infonnationstechnologie   (Germany)

Author keywords

Electromigration; Fast thermal stressing; Power electronics; Thermomigration

Indexed keywords

ELECTROMIGRATION; THERMAL GRADIENTS;

COMBINED EFFECT; EFFECT OF TEMPERATURE; LIFE-TIMES; THERMAL STRESSING; THERMOMIGRATION;

POWER ELECTRONICS;

EID: 84932102583     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2004.1315418     Document Type: Conference Paper

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