Microstructure and reliability of copper interconnects

IEEE Transactions on Electron Devices

Volumn 46, Issue 6, 1999, Pages 1113-1120

  Ryu, Changsup ^a   Kwon, Kee Won ^a   Loke, Alvin L S ^a   Lee, Haebum ^a   Nogami, Takeshi ^a   Dubin, Valery M ^a   Kavari, Rahim A ^a   Ray, Gary W ^a   Wong, S Simon ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTROMIGRATION; ELECTROPLATING; GRAIN SIZE AND SHAPE; INTEGRATED CIRCUITS; PARTICLE SIZE ANALYSIS; RELIABILITY; TEXTURES;

CONFORMAL DEPOSITION; COPPER INTERCONNECTS; DAMASCENE STRUCTURE; DEEP SUBMICRON RANGE; ELECTROMIGRATION LIFETIME; LINEWIDTHS; NARROW TRENCHES; SEED LAYERS;

COPPER;

EID: 0032687002     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.766872     Document Type: Article

References (13)