Electromigration drift and threshold in Cu thin-film interconnects

IEEE Transactions on Electron Devices

Volumn 43, Issue 12, 1996, Pages 2233-2239

  Frankovic, Richard ^a   Bernstein, Gary H ^a  

^a University of Notre Dame   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ALUMINUM ALLOYS; CALCULATIONS; COPPER; CURRENT DENSITY; DIFFUSION; ELECTROMIGRATION; GRAIN BOUNDARIES; THIN FILMS; TITANIUM NITRIDE;

BLECH-KINSBRON EDGE DISPLACEMENT TECHNIQUE; CRITICAL LENGTH CURRENT DENSITY PRODUCT; ELECTROMIGRATION INDUCED IONIC DRIFT VELOCITY;

ELECTRIC CONDUCTORS;

EID: 0030379337     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.544396     Document Type: Article

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