Dependence of copper interconnect electromigration phenomenon on barrier metal materials

Microelectronics Reliability

Volumn 43, Issue 9-11, 2003, Pages 1545-1550

  Hayashi, Masashi ^a   Nakano, Shinji ^a   Wada, Tetsuaki ^a  

^a Semiconductor Company   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; ELECTRIC RESISTANCE; TANTALUM COMPOUNDS; TITANIUM NITRIDE; ULSI CIRCUITS;

BARRIER METAL MATERIALS;

ELECTROMIGRATION;

EID: 0042193307     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(03)00273-7     Document Type: Conference Paper

References (9)

1. C. Ryu et ; 1997 IRPS p.201
2. K. Abe et ; 1998 IRPS p.342
3. L. Arnaud et ; 1999 IRPS p.263
4. K. Abe et ; 2000 IRPS p.333
5. C. K. Hu et ; 1999 Appl. Phys. Lett, p.2945
6. C. K. Hu et ; 1997 Thin Solid Films, p.443
7. M. Hayashi et ; 2001 Jpn. J. Appl. Phys. p.807
8. M. Hayashi et ; 2001 Jpn. J. Appl. Phys. p.694
9. N. D. McCusker et ; 1999 IRPS p.270