Effect of Joule heating on the determination of electromigration parameters

IEEE International Integrated Reliability Workshop Final Report

Volumn 2003-January, Issue , 2003, Pages 139-142

  Federspiel, X ^a   Girault, V ^b   Ney, D ^b  

^a NXP SEMICONDUCTORS   (Netherlands)

^b STMICROELECTRONICS   (France)

Author keywords

Current density; Electromigration; Heating; Life estimation; Life testing; Packaging; Performance evaluation; Semiconductor device modeling; Temperature; Wafer scale integration

Indexed keywords

ACTIVATION ENERGY; CHIP SCALE PACKAGES; CURRENT DENSITY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; SILICON WAFERS; TESTING;

ELECTROMIGRATION PARAMETERS; JOULES HEATING; LIFE ESTIMATION; LIFE-TESTING; PACKAGE LEVELS; PERFORMANCES EVALUATION; RELIABILITY TEST; SAMPLE SIZES; WAFER LEVEL RELIABILITIES; WAFER-SCALE INTEGRATION;

ELECTROMIGRATION;

EID: 49549119942     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2003.1283322     Document Type: Conference Paper

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