Nucleation and growth of CVD Al on different types of TiN

Thin Solid Films

Volumn 320, Issue 1, 1998, Pages 67-72

  Avinun, M ^a   Barel, N ^a   Kaplan, W D ^a   Eizenberg, M ^a   Naik, M ^b   Guo, T ^b   Chen, L Y ^b   Mosely, R ^b   Littau, K ^b   Zhou, S ^b   Chen, L ^b  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b APPLIED MATERIALS INC   (United States)

Author keywords

Al; CVD; Metallization; Nucleation; TiN

Indexed keywords

ALUMINUM; ASPECT RATIO; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL MICROSTRUCTURE; ELECTROMIGRATION; ELECTRON MICROSCOPY; FILM GROWTH; NUCLEATION; TITANIUM NITRIDE; X RAY DIFFRACTION ANALYSIS;

BULK PROPERTIES; DIFFUSION BARRIER; ELECTROMIGRATION RESISTANCE;

THIN FILMS;

EID: 0032482048     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)01067-5     Document Type: Article

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