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Volumn 55, Issue 1-4, 2001, Pages 245-255

Key reliability issues for copper integration in damascene architecture

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COPPER; DEPOSITION; DIFFUSION; ELECTROMIGRATION; SILICON NITRIDE;

EID: 0034831699     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00454-8     Document Type: Article
Times cited : (47)

References (13)
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  • 2
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  • 3
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    • Copper metallization reliability
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    • Lloyd, J.R.1
  • 5
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    • Electromigration in copper conductors
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    • (1995) Thin Solid Films , vol.262 , pp. 135-141
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  • 6
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    • Loke, A.L.S.1
  • 7
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    • Surface electromigration in copper interconnects
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    • (1999) Proc. 37th Intl. Reliab. Phys. Symp. , pp. 270-276
    • McCusker, N.D.1
  • 8
    • 0032316083 scopus 로고    scopus 로고
    • Wafer level electromigration applied to advanced copper/low-k dielectric process sequence integration
    • Workshop Final Report
    • D. Pierce et al., Wafer level electromigration applied to advanced copper/low-k dielectric process sequence integration, in: 1998 IEEE Intl. Integrated Reliab. Workshop Final Report, 1998, pp. 10-15.
    • (1998) 1998 IEEE Intl. Integrated Reliab. , pp. 10-15
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  • 9
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