Mechanical stress measurements in damascene copper interconnects and influence on electromigration parameters

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 745-748

  Reimbold, G ^a   Sicardy, O ^b   Arnaud, L ^a   Fillot, F ^a   Torres, J ^c  

^a CEA LETI   (France)

^b CEA GRENOBLE   (France)

^c STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRESS; COPPER; CURRENT DENSITY; ELECTROMIGRATION; EXTRAPOLATION; SYNCHROTRON RADIATION; TENSILE STRESS; X RAY DIFFRACTION;

CURRENT DESIGN RULES;

DIELECTRIC MATERIALS;

EID: 0036927884     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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2. R.P. Vinci, E.M. Zielinski, J.C. Bravman, Thermal strain and stress in copper thin films, Thin Solid Films, 262, (1995), p.142-153.
3. L. Arnaud. Electromigration threshold length effect in dual damascene copper-oxide interconnects. IEEE Int. Reliab. Phys. Symp. (2002), p. 433.
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7. P.R. Besser, Y.C. Joo, D. Winter, M. Van Ngo, R. Ortega. Mechanical stresses in aluminium and copper interconnect lines for 0.18 μm logic technologies, Mat. Res. Soc. Symp. Proc. Vol. 563, (1999), p.189.
8. S.H. Rhee, Y. Du, P.S. Ho. Characterization of thermal stresses of Cu low k submicron interconnect structures, Inter. Interco. Tech. Conf. (2002), p.89
9. K.D. Lee, X. Lu, E.T. Ogawa, H. Matsuhashi, P.S. Ho. Electromigration study of Cu and low k dual damascene interconnects, IEEE Int. Reliab. Phys. Symp. (2002), p.322.