Wafer-level electromigration reliability test for deep-submicron interconnect metallization

Proceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998

Volumn 1998-August, Issue , 1998, Pages 157-160

  Loh, Wye Boon ^a   Tse, Man Siu ^a   Chan, Lap ^b   Lo, Keng Foo ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b Chartered Semiconductor Manufacturing   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITE FILMS; ELECTROMIGRATION; ELECTRON DEVICES; INTEGRATED CIRCUIT INTERCONNECTS; METALS;

BOTTOM LAYERS; DEEP SUB-MICRON; ELECTROMIGRATION RELIABILITY; INTERACTIVE INTERFACES; INTERCONNECTION LINES; MULTIPLE DEVICES; PACKAGE LEVELS; TEMPERATURE RANGE;

ACTIVATION ENERGY;

EID: 0004954250     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/HKEDM.1998.740210     Document Type: Conference Paper

References (7)

1. Syd. R. Wilson, Clarence J. Tracy, John L. Freeman, Jr. "Handbook of multilevel metallization for ICs: materials, technology, and applications." Noyes 1993, p. 580.
2. Donald G. Pierce, and Philip G. Bruisius, "Correlation between highly and moderately accelerated electromigration tests", IEDL, vol. 14, no.6, Jun 93, p. 277.
3. B.J. Root & T. Turner, "Wafer level electromigration tests for production monitoring, " in Proc. 1985 Int. Reliability Phy. Symp., pp. 100-107.
4. ASTM-1260-89 Std: Standard Test Method for Estimating Electromigration Mean-Time-To-Failure & Sigma of IC Metallizations.
5. Robert E. Jones, Jr. and Larry D. Smith, "A new wafer-level isothermal joule-heated EM test for rapid testing of IC interconnect', J. Appl. Phys., pp.4670-4678, May 1987.
6. Y. Anata, Y. Fujisaki, M. Kawaji, H. Katto & M. Kubo, "Temperature-controlled wafer level joule-heated constant-current EM test of W/AlCu/Si/W", Proc. IEEE 1994 IntConf., vol. 7, pp.147, Mar 1995
7. J. Tao, N.W. Cheung, CM. Hu "Characterization and Modeling of Electromigration Failures in Multilayered Interconnects and Barrier Layer Materials", IEEE Trans Elec. Dev., Vol 43, No.ll, Novl996