A reliability statistics perspective on the pitfalls of standard Wafer-Level Electromigration Accelerated Test (SWEAT)

Journal of Electronic Testing: Theory and Applications (JETTA)

Volumn 17, Issue 1, 2001, Pages 63-68

  Tan, Cher Ming ^a   Yeo, Kelvin Ngan Chong ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Accelerated stress testing; Electromigration testing; Reliability statistics; SWEAT; Wafer level reliability

Indexed keywords

CORRELATION METHODS; RELIABILITY THEORY; WSI CIRCUITS;

PITFALLS;

ELECTROMIGRATION;

EID: 0035244612     PISSN: 09238174     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1011102127642     Document Type: Article

References (27)

1. A procedure for executing SWEAT
2. Mass transport of Aluminum by Momentum Exchange with conducting electrons
3. On the status of Wafer-Level Metal Integrity Testing
4. A comparison between normally and highly accelerated electromigration tests
5. Evaluation of test methods and associated test structures for interconnect reliability control
6. Current and temperature distribution impact on electromigration failure location in SWEAT structure
7. Wafer Level Electromigration Tests on NIST and SWEAT structures
8. The electromigration and reliability of VLSI metallization under temperature gradient conditions
9. Aluminum-Properties and physical metallurgy
10. Degradation and subsequent healing by electromigration in A1-1 wt% Si thin films
11. Increase in electromigration resistance by enhancing back-flow effect
12. Electromigration-induced vacancy behavior in unpassivated thin films
13. Pitfalls of accelerated testing
14. A candid comparison of the SWEAT technique and the conventional test procedure for electromigration study in sub-half micron ULSI interconnects
15. Drawbacks to using NIST electromigration test structures to test bamboo metal lines
16. Monte Carlo calculations based on the generalized Electromigration Failure Model
17. Wafer-level pulsed DC electromigration reponse at very high frequencies
18. Temperature measurements of metal lines under current stress by high-resolution laser probing
19. Wafer-Level electromigration tests for production monitoring
20. Thermal analysis of electromigration test structures
21. The measurement, use and interpretation of the temperature coefficient of resistance of metallization
22. Proposal for a standard procedure for moderately accelerated electromigration tests on metal lines
23. Standard method for measuring and using the temperature coefficient of resistance to determine the temperature of a metallization line