Mechanism of pre-annealing effect on electromigration immunity of Al-Cu line

Microelectronics Reliability

Volumn 41, Issue 8, 2001, Pages 1259-1264

  Mazumder, M K ^a   Yamamoto, S ^a   Maeda, H ^a   Komori, J ^a   Mashiko, Y ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; ATOMS; COPPER; CRYSTAL DEFECTS; GRAIN GROWTH; INTEGRATED CIRCUIT TESTING; MICROELECTRONIC PROCESSING;

ELECTRON WIND;

ELECTROMIGRATION;

EID: 0035416610     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00111-1     Document Type: Article

References (16)

1. Stress-induced phenomenon in metallization