Electromigration and reliability of VLSI metallization under temperature gradient conditions

International Conference on Solid-State and Integrated Circuit Technology Proceedings

Volumn , Issue , 1998, Pages 226-229

  Guo, Weiling ^a   Li, Zhiguo ^a   Zhou, Tianyi ^a   Cheng, Yaohai ^a   Chen, Changhua ^a   Sheng, Guangdi ^a  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC RESISTANCE; ELECTROMIGRATION; METALLIZING; TEMPERATURE DISTRIBUTION; TITANIUM ALLOYS;

MEAN TIME TO FAILURE (MTF);

VLSI CIRCUITS;

EID: 0032226718     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (6)