Influence of low-k dry etch chemistries on the properties of copper and a Ta-based diffusion barrier

Microelectronic Engineering

Volumn 70, Issue 2-4, 2003, Pages 285-292

  Ernur, D ^a,b   Iacopi, F ^a,b   Carbonell, L ^a   Struyf, Herbert ^a   Maex, K ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Copper; Diffusion barrier; Dry etch plasma; Low k; Porous

Indexed keywords

ATOMIC FORCE MICROSCOPY; COPPER; DESORPTION; DIFFUSION; MORPHOLOGY; ORGANIC POLYMERS; PERMITTIVITY; PLASMA ETCHING; POROSITY; SCANNING ELECTRON MICROSCOPY; TANTALUM;

DIFFUSION BARRIERS;

DIELECTRIC MATERIALS;

EID: 0142011584     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00377-0     Document Type: Conference Paper

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